公开(公告)号：US07378334B2

公开(公告)日：2008-05-27

申请号：US11344197

申请日：2006-02-01

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L21/20

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。 在p型氮化物半导体层8上形成包含多于一个金属层的第一结合层。 具有第一面和第二面的支撑衬底的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于用于生长氮化物半导体的衬底1的热膨胀系数。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US07358522B2

公开(公告)日：2008-04-15

申请号：US10250453

申请日：2002-11-05

申请人： Tomoya Yanamoto

发明人： Tomoya Yanamoto

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/3409 ,  H01S5/34333

摘要： A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter.

摘要翻译： 半导体器件包括具有量子阱结构的有源层，所述有源层包括阱层和阻挡层，并被第一导电型层和第二导电型层夹在中间，其中第一势垒层设置在 有源层中的第一导电类型层和第二阻挡层设置在有源层中的第二导电类型层的一侧上，至少一个阱层被夹在其中，并且第二势垒层具有较低的带隙能量 其中第二导电类型层优选地包括具有比第一阻挡层的带隙能量高的带隙能量的载流子限制层，从而导致每个中的阻挡层的反向结构 相对于有源层的不对称结构的导电类型层，以提供具有优异结晶度的波导结构和d 氮化物半导体发光器件在380nm或更短波长下工作的器件特性。

公开(公告)号：US08030665B2

公开(公告)日：2011-10-04

申请号：US12113030

申请日：2008-04-30

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US20060267042A1

公开(公告)日：2006-11-30

申请号：US11493661

申请日：2006-07-27

申请人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

发明人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L24/29 ,  H01L33/32 ,  H01L33/483 ,  H01L33/501 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01037 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).

摘要翻译： 一种发光装置，包括设置在支撑体（105）上的发光装置（101），以及涂覆层（（108,109）），其结合吸收由所述发光装置（101）发射的光并发光的荧光物质 所述涂层（108,109）由包含氧化物和氢氧化物的无机材料制成，每个含有至少一种选自以下的元素： 由Si，Al，Ga，Ti，Ge，P，B，Zr，Y，Sn，Pb和碱土金属组成的组，粘合层（110）由与涂层相同的无机材料 （108,109）。

公开(公告)号：US20080296609A1

公开(公告)日：2008-12-04

申请号：US12113030

申请日：2008-04-30

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US20080203418A1

公开(公告)日：2008-08-28

申请号：US12035324

申请日：2008-02-21

申请人： Tomoya Yanamoto

发明人： Tomoya Yanamoto

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/3409 ,  H01S5/34333

摘要： A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter.

摘要翻译： 半导体器件包括具有量子阱结构的有源层，所述有源层包括阱层和阻挡层，并被第一导电型层和第二导电型层夹在中间，其中第一势垒层设置在 有源层中的第一导电类型层和第二阻挡层设置在有源层中的第二导电类型层的一侧上，至少一个阱层被夹在其中，并且第二势垒层具有较低的带隙能量 其中第二导电类型层优选地包括具有比第一阻挡层的带隙能量高的带隙能量的载流子限制层，从而导致每个中的阻挡层的反向结构 相对于有源层的不对称结构的导电类型层，以提供具有优异结晶度的波导结构和d 氮化物半导体发光器件在380nm或更短波长下工作的器件特性。

公开(公告)号：US07301175B2

公开(公告)日：2007-11-27

申请号：US10673273

申请日：2003-09-30

申请人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

发明人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L24/29 ,  H01L33/32 ,  H01L33/483 ,  H01L33/501 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01037 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).

摘要翻译： 一种发光装置，包括设置在支撑体（105）上的发光装置（101），以及涂覆层（（108,109）），其结合吸收由所述发光装置（101）发出的光并发光的荧光物质 所述涂层（108,109）由包含氧化物和氢氧化物的无机材料制成，每个含有至少一种选自以下的元素： 由Si，Al，Ga，Ti，Ge，P，B，Zr，Y，Sn，Pb和碱土金属组成的组，粘合层（110）由与涂层相同的无机材料 （108,109）。

公开(公告)号：US20060128118A1

公开(公告)日：2006-06-15

申请号：US11344197

申请日：2006-02-01

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

公开(公告)号：US06822272B2

公开(公告)日：2004-11-23

申请号：US10189767

申请日：2002-07-08

申请人： Tomoya Yanamoto

发明人： Tomoya Yanamoto

IPC分类号： H01L310328

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/18369 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04

摘要： A gallium nitride-based multilayered reflective membrane with an excellent crystallinity while keeping a high reflectivity and a gallium nitride-based light emitting element using such a multilayered reflective are provided. The multilayered reflective membrane includes an AlaGa1−aN layer (0

摘要翻译： 提供了一种具有优异的结晶性同时保持高反射率的氮化镓基多层反射膜和使用这种多层反射的氮化镓基发光元件。 多层反射膜包括厚度为（α1/λ）/（4n1）（λ：入射光波长，n1：反射率）的AlGaAl-AlN层（0

公开(公告)号：US07667226B2

公开(公告)日：2010-02-23

申请号：US12035324

申请日：2008-02-21

申请人： Tomoya Yanamoto

发明人： Tomoya Yanamoto

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/309 ,  H01S5/3216 ,  H01S5/3407 ,  H01S5/3409 ,  H01S5/34333

摘要： A semiconductor device comprises an active layer having a quantum well structure, the active layer including a well layer and a barrier layer and being sandwiched by a first conductivity type layer and a second conductivity type layer, wherein a first barrier layer is provided on side of the first conductivity type layer in the active layer and a second barrier layer is provided on the side of the second conductivity type layer in the active layer, at least one well layer is sandwiched thereby, and the second barrier layer has a band gap energy lower than that of the first barrier layer in the form of asymmetric barrier layer structure, where the second conductivity type layer preferably includes a carrier confinement layer having a band gap energy higher than that of the first barrier layer, resulting in a reverse structure in each of conductivity type layer in respect to the asymmetric structure of the active layer to provide a waveguide structure having excellent crystallinity and device characteristics in the nitride semiconductor light emitting device operating at a wavelength of 380 nm or shorter.

摘要翻译： 半导体器件包括具有量子阱结构的有源层，所述有源层包括阱层和阻挡层，并被第一导电型层和第二导电型层夹在中间，其中第一势垒层设置在 有源层中的第一导电类型层和第二阻挡层设置在有源层中的第二导电类型层的一侧上，至少一个阱层被夹在其中，并且第二势垒层具有较低的带隙能量 其中第二导电类型层优选地包括具有比第一阻挡层的带隙能量高的带隙能量的载流子限制层，从而导致每个中的阻挡层的反向结构 相对于有源层的不对称结构的导电类型层，以提供具有优异结晶度的波导结构和d 氮化物半导体发光器件在380nm或更短波长下工作的器件特性。