公开(公告)号：US07378334B2

公开(公告)日：2008-05-27

申请号：US11344197

申请日：2006-02-01

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L21/20

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。 在p型氮化物半导体层8上形成包含多于一个金属层的第一结合层。 具有第一面和第二面的支撑衬底的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于用于生长氮化物半导体的衬底1的热膨胀系数。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US08030665B2

公开(公告)日：2011-10-04

申请号：US12113030

申请日：2008-04-30

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L29/26

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US20080296609A1

公开(公告)日：2008-12-04

申请号：US12113030

申请日：2008-04-30

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US20060128118A1

公开(公告)日：2006-06-15

申请号：US11344197

申请日：2006-02-01

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

公开(公告)号：US07105857B2

公开(公告)日：2006-09-12

申请号：US10614342

申请日：2003-07-08

申请人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

发明人： Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto ,  Masashi Yamamoto ,  Daisuke Morita

IPC分类号： H01L31/12

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L33/0079 ,  H01L33/32 ,  H01L33/483 ,  H01L33/508 ,  H01L33/62 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/01013 ,  H01L2924/01037 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

摘要： A substrate 1 for growing nitride semiconductor has a first and second face and has a thermal expansion coefficient that is larger than that of the nitride semiconductor. At least n-type nitride semiconductor layers 3 to 5, an active layer 6 and p-type nitride semiconductor layers 7 to 8 are laminated to form a stack of nitride semiconductor on the first face of the substrate 1. A first bonding layer including more than one metal layer is formed on the p-type nitride semiconductor layer 8. A supporting substrate having a first and second face has a thermal expansion coefficient that is larger than that of the nitride semiconductor and is equal or smaller than that of the substrate 1 for growing nitride semiconductor. A second bonding layer including more than one metal layer is formed on the first face of the supporting substrate. The first bonding layer 9 and the second bonding layer 11 are faced with each other and, then, pressed with heat to bond together. After that, the substrate 1 for growing nitride semiconductor is removed from the stack of nitride semiconductor so that a nitride semiconductor device is provided.

摘要翻译： 用于生长氮化物半导体的衬底1具有第一面和第二面，其热膨胀系数大于氮化物半导体的热膨胀系数。 至少n型氮化物半导体层3至5，有源层6和p型氮化物半导体层7至8层叠以在衬底1的第一面上形成氮化物半导体层。第一接合层包括更多 在p型氮化物半导体层8上形成一层以上的金属层。具有第一面和第二面的支撑基板的热膨胀系数大于氮化物半导体的热膨胀系数，并且等于或小于基板1的热膨胀系数 用于生长氮化物半导体。 在支撑基板的第一面上形成包括多于一个金属层的第二粘接层。 第一接合层9和第二接合层11彼此面对，然后被加热压合以结合在一起。 之后，从氮化物半导体堆叠中去除用于生长氮化物半导体的衬底1，从而提供氮化物半导体器件。

公开(公告)号：US20060267042A1

公开(公告)日：2006-11-30

申请号：US11493661

申请日：2006-07-27

申请人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

发明人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L24/29 ,  H01L33/32 ,  H01L33/483 ,  H01L33/501 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01037 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).

摘要翻译： 一种发光装置，包括设置在支撑体（105）上的发光装置（101），以及涂覆层（（108,109）），其结合吸收由所述发光装置（101）发射的光并发光的荧光物质 所述涂层（108,109）由包含氧化物和氢氧化物的无机材料制成，每个含有至少一种选自以下的元素： 由Si，Al，Ga，Ti，Ge，P，B，Zr，Y，Sn，Pb和碱土金属组成的组，粘合层（110）由与涂层相同的无机材料 （108,109）。

公开(公告)号：US07301175B2

公开(公告)日：2007-11-27

申请号：US10673273

申请日：2003-09-30

申请人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

发明人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L24/29 ,  H01L33/32 ,  H01L33/483 ,  H01L33/501 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01037 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).

摘要翻译： 一种发光装置，包括设置在支撑体（105）上的发光装置（101），以及涂覆层（（108,109）），其结合吸收由所述发光装置（101）发出的光并发光的荧光物质 所述涂层（108,109）由包含氧化物和氢氧化物的无机材料制成，每个含有至少一种选自以下的元素： 由Si，Al，Ga，Ti，Ge，P，B，Zr，Y，Sn，Pb和碱土金属组成的组，粘合层（110）由与涂层相同的无机材料 （108,109）。

公开(公告)号：US07390684B2

公开(公告)日：2008-06-24

申请号：US11493661

申请日：2006-07-27

申请人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

发明人： Kunihiro Izuno ,  Kouki Matsumoto ,  Shinichi Nagahama ,  Masahiko Sano ,  Tomoya Yanamoto ,  Keiji Sakamoto

IPC分类号： H01L21/00

CPC分类号： H01L33/44 ,  H01L21/76251 ,  H01L24/29 ,  H01L33/32 ,  H01L33/483 ,  H01L33/501 ,  H01L33/62 ,  H01L2224/0603 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01037 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/0105 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01027 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/01049 ,  H01L2924/3512 ,  H01L2924/00012

摘要： A light emitting apparatus comprising a light emitting device (101) disposed on a supporting body (105), and coating layers ((108, 109) that bind a fluorescent substance that absorbs light emitted by the light emitting device (101) and emits light of a different wavelength and secures the fluorescent substance onto the surface of the light emitting device (101). The coating layers (108, 109) are made of an inorganic material including an oxide and a hydroxide, each containing at least one element selected from the group consisting of Si, Al, Ga, Ti, Ge, P, B, Zr, Y, Sn, Pb and alkali earth metals. Also an adhesive layer (110) is made of the same inorganic material as that of the coating layers (108, 109).

摘要翻译： 一种发光装置，包括设置在支撑体（105）上的发光装置（101），以及涂覆层（（108,109）），其结合吸收由所述发光装置（101）发出的光并发光的荧光物质 所述涂层（108,109）由包含氧化物和氢氧化物的无机材料制成，每个含有至少一种选自以下的元素： 由Si，Al，Ga，Ti，Ge，P，B，Zr，Y，Sn，Pb和碱土金属组成的组，粘合层（110）由与涂层相同的无机材料 （108,109）。

公开(公告)号：US07095051B2

公开(公告)日：2006-08-22

申请号：US10473159

申请日：2002-03-28

申请人： Shinichi Nagahama ,  Tomoya Yanamoto

发明人： Shinichi Nagahama ,  Tomoya Yanamoto

IPC分类号： H01L27/15

CPC分类号： H01L21/0237 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L33/32 ,  H01S5/34333 ,  H01S2302/00

摘要： In a nitride semiconductor device having an active layer 12 between a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layer 12 has at least a well layer 11 formed of a nitride semiconductor containing In and Al and a barrier layer 2 formed of a nitride semiconductor containing Al, whereby a laser device excellent in emitting efficacy at a short wavelength region is obtained. It is particularly preferable that said well layer 1 is formed of AlxInyGa1−x−yN (0

摘要翻译： 在具有在第一导电类型和第二导电类型层之间的有源层12的氮化物半导体器件中，采用量子阱结构，其中有源层12至少具有由氮化物形成的阱层11 含有In和Al的半导体和由含有Al的氮化物半导体形成的阻挡层2，由此获得在短波长区域发射功效优异的激光器件。 特别优选的是，所述阱层1由Al x Ga 1-x N（0

公开(公告)号：US06711191B1

公开(公告)日：2004-03-23

申请号：US09519440

申请日：2000-03-03

申请人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

发明人： Tokuya Kozaki ,  Masahiko Sano ,  Shuji Nakamura ,  Shinichi Nagahama

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2004 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32341 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor laser device has an improved stability of the lateral mode under high output power and a longer lifetime, so that the device can be applied to write and read light sources for recording media with high capacity. The nitride semiconductor laser device includes an active layer, a p-side cladding layer, and a p-side contact layer laminated in turn. The device further includes a waveguide region of a stripe structure formed by etching from the p-side contact layer. The stripe width provided by etching is within the stripe range of 1 to 3 &mgr;m and the etching depth is below the thickness of the p-side cladding layer of 0.1 &mgr;m and above the active layer. Particularly, when a p-side optical waveguide layer includes a projection part of the stripe structure and a p-type nitride semiconductor layer on the projection part and the projection part of the p-side optical waveguide layer has a thickness of not more than 1 &mgr;m, an aspect ratio is improved in far field image. Moreover, the thickness of the p-side optical waveguide layer is greater than that of an n-side optical waveguide layer.