公开(公告)号：US08851886B2

公开(公告)日：2014-10-07

申请号：US12363059

申请日：2009-01-30

申请人： Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

发明人： Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

IPC分类号： F27D1/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/455 ,  H01L21/67098

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a non-metallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold includes a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。 在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。 歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，用于将气体供应到反应管的内部。

公开(公告)号：US08591657B2

公开(公告)日：2013-11-26

申请号：US12548752

申请日：2009-08-27

申请人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

发明人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

IPC分类号： C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/45519 ,  H01L21/68792

摘要： Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

摘要翻译： 可以抑制金属腐蚀和基材污染，并且可以提高工艺质量和产率。 一种基板处理装置，包括：处理室; 衬底保持器; 关闭和打开处理室的盖部分; 衬底支架台; 旋转机构，旋转基板保持台; 插入所述盖部并连接到所述基板保持台和所述旋转机构的旋转轴，使得在其间形成有第一气体喷出口; 由旋转机构，盖部和旋转轴包围的第一气体滞留部; 形成在所述基板保持台上的第二气体喷出口; 第二气体停滞部，形成在所述旋转轴上并且经由所述第二气体喷出口与所述处理室连通; 以及形成在旋转轴处的流动端口，用于连接第一和第二气体停滞部分。

公开(公告)号：US08529701B2

公开(公告)日：2013-09-10

申请号：US12537017

申请日：2009-08-06

申请人： Shinya Morita ,  Takayuki Nakada ,  Tomoyuki Matsuda ,  Keisuke Sakashita

发明人： Shinya Morita ,  Takayuki Nakada ,  Tomoyuki Matsuda ,  Keisuke Sakashita

IPC分类号： C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06

CPC分类号： C23C16/4412

摘要： A substrate processing apparatus includes a reaction tube, the reaction tub including an inner tube made of quartz and an outer tube made of quartz; a manifold made of quartz disposed under the outer tube, a top surface of the manifold being in air-tight contact with a bottom surface of the outer tube via a sealing member; a seal cap cover made of quartz disposed under the manifold, a top surface of the seal cap cover being in air-tight contact with a bottom surface of the manifold via a sealing member; a seal cap covered by the seal cap cover, a top surface of the seal cap being in air-tight contact with a bottom surface of the seal cap cover via a sealing member; and at least one protrusion disposed at the bottom surface of one of the outer tube, the manifold, the seal cap cover, and combinations thereof.

摘要翻译： 基板处理装置包括反应管，反应槽包括由石英制成的内管和由石英制成的外管; 设置在外管下方的由石英制成的歧管，歧管的顶表面通过密封构件与外管的底表面气密接触; 由石英制成的密封盖盖，设置在歧管下方，密封帽盖的顶表面通过密封件与歧管的底表面气密接触; 由密封帽盖覆盖的密封帽，密封盖的顶表面通过密封构件与密封盖盖的底表面气密接触; 以及设置在所述外管，所述歧管，所述密封盖罩及其组合之一的底表面处的至少一个突起。

公开(公告)号：US20100055918A1

公开(公告)日：2010-03-04

申请号：US12548752

申请日：2009-08-27

申请人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

发明人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

IPC分类号： H01L21/465

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/45519 ,  H01L21/68792

摘要： Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

摘要翻译： 可以抑制金属腐蚀和基材污染，并且可以提高工艺质量和产率。 一种基板处理装置，包括：处理室; 衬底保持器; 关闭和打开处理室的盖部分; 衬底支架台; 旋转机构，旋转基板保持台; 插入所述盖部并连接到所述基板保持台和所述旋转机构的旋转轴，使得在其间形成有第一气体喷出口; 由旋转机构，盖部和旋转轴包围的第一气体滞留部; 形成在所述基板保持台上的第二气体喷出口; 第二气体停滞部，形成在所述旋转轴上并且经由所述第二气体喷出口与所述处理室连通; 以及形成在旋转轴处的流动端口，用于连接第一和第二气体停滞部分。

公开(公告)号：US20100051597A1

公开(公告)日：2010-03-04

申请号：US12548066

申请日：2009-08-26

申请人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

发明人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

IPC分类号： H01L21/477 ,  H05B1/00

CPC分类号： C23C16/4401 ,  H01L21/67109

摘要： A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.

摘要翻译： 一种基板处理装置，包括：外管; 连接到外管并由非金属材料制成的歧管; 内管，其设置在所述歧管中比所述外管更内侧并且构造成在其中处理基板; 加热装置，其安装在比所述外管更外侧并且构造成加热所述外管的内部; 盖，其构造成打开和关闭歧管的开口，密封构件插入其间; 以及安装在所述歧管中的吸热构件，所述内管的底端插入其中，并且构造成从所述加热装置吸收热量，所述吸热构件由非金属材料制成。

公开(公告)号：US08076615B2

公开(公告)日：2011-12-13

申请号：US12548066

申请日：2009-08-26

申请人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

发明人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

IPC分类号： F27B5/14 ,  C23C16/00

CPC分类号： C23C16/4401 ,  H01L21/67109

摘要： A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.

摘要翻译： 一种基板处理装置，包括：外管; 连接到外管并由非金属材料制成的歧管; 内管，其设置在所述歧管中比所述外管更内侧并且构造成在其中处理基板; 加热装置，其安装在比所述外管更外侧并且构造成加热所述外管的内部; 盖，其构造成打开和关闭歧管的开口，密封构件插入其间; 以及安装在所述歧管中的吸热构件，所述内管的底端插入其中，并且构造成从所述加热装置吸收热量，所述吸热构件由非金属材料制成。

公开(公告)号：US09460945B2

公开(公告)日：2016-10-04

申请号：US11976949

申请日：2007-10-30

申请人： Shigeo Nakada ,  Takayuki Nakada

发明人： Shigeo Nakada ,  Takayuki Nakada

IPC分类号： C23C16/00 ,  H01L21/00 ,  H01L21/67 ,  H01L21/677

CPC分类号： H01L21/67109 ,  H01L21/67757

摘要： A substrate processing apparatus comprises a processing chamber for processing a substrate, a substrate supporting tool for supporting and carrying the substrate into the processing chamber, a standby chamber formed below the processing chamber for holding the substrate supporting tool in standby, a gas supply unit provided on the side of the standby chamber for supplying inert gas or gas containing oxygen into the standby chamber, a gas exhaust unit provided on the side of the standby chamber and opposite to the gas supply unit, for exhausting the inert gas or gas containing oxygen from the standby chamber, a first gas exhaust path connected to the gas exhaust unit for exhausting the inert gas or gas containing oxygen within the gas exhaust unit, a second gas exhaust path connected to the side of the gas exhaust unit for exhausting the gas containing oxygen within the exhaust gas unit, and a gate valve for opening and closing the second gas exhaust path.

摘要翻译： 一种基板处理装置，包括：用于处理基板的处理室，用于将基板支撑并承载到处理室中的基板支撑工具;形成在处理室下面的备用室，用于将基板支撑工具保持在备用状态;气体供给单元， 在备用室的一侧用于向备用室供给惰性气体或含氧的气体，设置在备用室侧并与气体供给单元相对的排气单元，用于将惰性气体或含氧气体排出 所述备用室，连接到所述排气单元的用于排出所述气体排出单元内的含有氧的惰性气体或气体的第一排气路径，连接到所述排气单元侧以排出含氧气体的第二气体排出路径 在排气单元内，以及用于打开和关闭第二排气通道的闸阀。

公开(公告)号：US20080105204A1

公开(公告)日：2008-05-08

申请号：US11976949

申请日：2007-10-30

申请人： Shigeo Nakada ,  Takayuki Nakada

发明人： Shigeo Nakada ,  Takayuki Nakada

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67109 ,  H01L21/67757

摘要： A substrate processing apparatus comprises a processing chamber for processing a substrate, a substrate supporting tool for supporting and carrying the substrate into the processing chamber, a standby chamber formed below the processing chamber for holding the substrate supporting tool in standby, a gas supply unit provided on the side of the standby chamber for supplying inert gas or gas containing oxygen into the standby chamber, a gas exhaust unit provided on the side of the standby chamber and opposite to the gas supply unit, for exhausting the inert gas or gas containing oxygen from the standby chamber, a first gas exhaust path connected to the gas exhaust unit for exhausting the inert gas or gas containing oxygen within the gas exhaust unit, a second gas exhaust path connected to the side of the gas exhaust unit for exhausting the gas containing oxygen within the exhaust gas unit, and a gate valve for opening and closing the second gas exhaust path.

摘要翻译： 一种基板处理装置，包括：用于处理基板的处理室，用于将基板支撑并承载到处理室中的基板支撑工具;形成在处理室下面的备用室，用于将基板支撑工具保持在备用状态;气体供给单元， 在备用室的一侧用于向备用室供给惰性气体或含氧的气体，设置在备用室侧并与气体供给单元相对的排气单元，用于将惰性气体或含氧气体排出 所述备用室，连接到所述排气单元的用于排出所述气体排出单元内的含有氧的惰性气体或气体的第一排气路径，连接到所述排气单元侧以排出含氧气体的第二气体排出路径 在排气单元内，以及用于打开和关闭第二排气通道的闸阀。

公开(公告)号：US08398771B2

公开(公告)日：2013-03-19

申请号：US12498639

申请日：2009-07-07

申请人： Takayuki Nakada ,  Koichi Sada ,  Tomoyuki Matsuda

发明人： Takayuki Nakada ,  Koichi Sada ,  Tomoyuki Matsuda

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/54 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561

摘要： A substrate processing apparatus in accordance with the present invention includes a process chamber configured to accommodate a substrate, a gas supply line configured to supply a gas to an inside of the process chamber, and an exhaust line configured to exhaust the inside of the process chamber. The gas supply line of the substrate processing apparatus includes a preheating unit preheating the gas supplied from a gas source, a metal pipeline having an angled section wherein the metal pipe line connects the preheating unit and the inside of the process chamber to supply the gas preheated by the preheating unit into the process chamber, and a heat dissipation member covering the angled section to dissipate heat from the angled section.

摘要翻译： 根据本发明的基板处理装置包括被配置为容纳基板的处理室，被配置为向处理室的内部供应气体的气体供给管线和被构造成排出处理室内部的排气管线 。 基板处理装置的气体供给管线包括：预热单元，用于对从气体源供应的气体进行预热;金属管道，其具有成角度的部分，金属管线将预热单元与处理室的内部连接，以供应预热的气体 通过预热单元进入处理室，以及散热构件，其覆盖成角度的部分以从倾斜的部分散发热量。

公开(公告)号：US20100044475A1

公开(公告)日：2010-02-25

申请号：US12519401

申请日：2007-12-18

申请人： Takayuki Nakada ,  Hiroshi Suda ,  Masaharu Machi ,  Tomohiro Yamaguchi ,  Sumio Wada

发明人： Takayuki Nakada ,  Hiroshi Suda ,  Masaharu Machi ,  Tomohiro Yamaguchi ,  Sumio Wada

IPC分类号： F23D11/32

CPC分类号： B05B5/057 ,  F25B21/04

摘要： Disclosed is an electrostatic atomizer, which comprises a cooler adapted to cool an atomizing electrode so as to allow moisture in air to be frozen onto the atomizing electrode, a melter adapted to melt ice frozen on the atomizing electrode so as to supply water onto the atomizing electrode, a high-voltage applying section adapted to apply a high voltage to the atomizing electrode, and a control section adapted to activate the high-voltage applying section in a state after supplying water onto the atomizing electrode by melting the ice frozen thereon, so as to apply a high voltage to the atomizing electrode to electrostatically atomize the water supplied on the atomizing electrode. The electrostatic atomizer of the present invention can reliably supply water onto the atomizing electrode and electrostatically atomize the water, without restrictions due to temperature/humidity conditions in a mist-receiving space targeted for implementation of electrostatic atomization therewithin, even if the mist-receiving space has a low temperature and/or a low humidity.

摘要翻译： 公开了一种静电雾化器，其包括适于冷却雾化电极以使空气中的水分冷冻到雾化电极上的冷却器，适于熔化在雾化电极上冻结的冰以便将水供应到雾化电极上的熔化器 电极，适于向雾化电极施加高电压的高压施加部分，以及适于在通过熔化冷冻的冰上将水供应到雾化电极上的状态下来激活高压施加部分的控制部分，因此 为了对雾化电极施加高电压，对供给到雾化电极上的水进行静电雾化。 本发明的静电雾化器能够可靠地向雾化电极供给水，并且，即使在雾化接收空间中也可以在雾化接收空间中由于温度/湿度条件而不受限制地对水进行静电雾化， 具有低温和/或低湿度。