公开(公告)号：US20100051597A1

公开(公告)日：2010-03-04

申请号：US12548066

申请日：2009-08-26

申请人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

发明人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

IPC分类号： H01L21/477 ,  H05B1/00

CPC分类号： C23C16/4401 ,  H01L21/67109

摘要： A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.

摘要翻译： 一种基板处理装置，包括：外管; 连接到外管并由非金属材料制成的歧管; 内管，其设置在所述歧管中比所述外管更内侧并且构造成在其中处理基板; 加热装置，其安装在比所述外管更外侧并且构造成加热所述外管的内部; 盖，其构造成打开和关闭歧管的开口，密封构件插入其间; 以及安装在所述歧管中的吸热构件，所述内管的底端插入其中，并且构造成从所述加热装置吸收热量，所述吸热构件由非金属材料制成。

公开(公告)号：US08076615B2

公开(公告)日：2011-12-13

申请号：US12548066

申请日：2009-08-26

申请人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

发明人： Shinya Morita ,  Koichi Sada ,  Takayuki Nakada ,  Tomoyuki Matsuda

IPC分类号： F27B5/14 ,  C23C16/00

CPC分类号： C23C16/4401 ,  H01L21/67109

摘要： A substrate processing apparatus comprises: an outer tube; a manifold connected to the outer tube and made of a non-metal material; an inner tube disposed in the manifold at a more inner side than the outer tube and configured to process a substrate therein; a heating device installed at a more outer side than the outer tube and configured to heat the inside of the outer tube; a lid configured to open and close an opening of the manifold, with a seal member intervened therebetween; and a heat absorption member installed in the manifold, with a bottom end of the inner tube intervened therebetween, and configured to absorb heat from the heating device, the heat absorption member being made of a non-metal material.

摘要翻译： 一种基板处理装置，包括：外管; 连接到外管并由非金属材料制成的歧管; 内管，其设置在所述歧管中比所述外管更内侧并且构造成在其中处理基板; 加热装置，其安装在比所述外管更外侧并且构造成加热所述外管的内部; 盖，其构造成打开和关闭歧管的开口，密封构件插入其间; 以及安装在所述歧管中的吸热构件，所述内管的底端插入其中，并且构造成从所述加热装置吸收热量，所述吸热构件由非金属材料制成。

公开(公告)号：US08591657B2

公开(公告)日：2013-11-26

申请号：US12548752

申请日：2009-08-27

申请人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

发明人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

IPC分类号： C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/45519 ,  H01L21/68792

摘要： Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

摘要翻译： 可以抑制金属腐蚀和基材污染，并且可以提高工艺质量和产率。 一种基板处理装置，包括：处理室; 衬底保持器; 关闭和打开处理室的盖部分; 衬底支架台; 旋转机构，旋转基板保持台; 插入所述盖部并连接到所述基板保持台和所述旋转机构的旋转轴，使得在其间形成有第一气体喷出口; 由旋转机构，盖部和旋转轴包围的第一气体滞留部; 形成在所述基板保持台上的第二气体喷出口; 第二气体停滞部，形成在所述旋转轴上并且经由所述第二气体喷出口与所述处理室连通; 以及形成在旋转轴处的流动端口，用于连接第一和第二气体停滞部分。

公开(公告)号：US08529701B2

公开(公告)日：2013-09-10

申请号：US12537017

申请日：2009-08-06

申请人： Shinya Morita ,  Takayuki Nakada ,  Tomoyuki Matsuda ,  Keisuke Sakashita

发明人： Shinya Morita ,  Takayuki Nakada ,  Tomoyuki Matsuda ,  Keisuke Sakashita

IPC分类号： C23C16/455 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06

CPC分类号： C23C16/4412

摘要： A substrate processing apparatus includes a reaction tube, the reaction tub including an inner tube made of quartz and an outer tube made of quartz; a manifold made of quartz disposed under the outer tube, a top surface of the manifold being in air-tight contact with a bottom surface of the outer tube via a sealing member; a seal cap cover made of quartz disposed under the manifold, a top surface of the seal cap cover being in air-tight contact with a bottom surface of the manifold via a sealing member; a seal cap covered by the seal cap cover, a top surface of the seal cap being in air-tight contact with a bottom surface of the seal cap cover via a sealing member; and at least one protrusion disposed at the bottom surface of one of the outer tube, the manifold, the seal cap cover, and combinations thereof.

摘要翻译： 基板处理装置包括反应管，反应槽包括由石英制成的内管和由石英制成的外管; 设置在外管下方的由石英制成的歧管，歧管的顶表面通过密封构件与外管的底表面气密接触; 由石英制成的密封盖盖，设置在歧管下方，密封帽盖的顶表面通过密封件与歧管的底表面气密接触; 由密封帽盖覆盖的密封帽，密封盖的顶表面通过密封构件与密封盖盖的底表面气密接触; 以及设置在所述外管，所述歧管，所述密封盖罩及其组合之一的底表面处的至少一个突起。

公开(公告)号：US20100055918A1

公开(公告)日：2010-03-04

申请号：US12548752

申请日：2009-08-27

申请人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

发明人： Takayuki Nakada ,  Tomoyuki Matsuda ,  Shinya Morita

IPC分类号： H01L21/465

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/45519 ,  H01L21/68792

摘要： Metal corrosion and substrate contamination can be suppressed, and process quality and yield can be improved. A substrate processing apparatus comprises: a process chamber; a substrate holder; a cover part closing and opening the process chamber; a substrate holder stage; a rotary mechanism rotating the substrate holder stage; a rotation shaft inserted through the cover part and connected to the substrate holder stage and the rotary mechanism so that a first gas ejection port is formed therebetween; a first gas stagnant part surrounded by the rotary mechanism, the cover part, and the rotation shaft; a second gas ejection port formed at the substrate holder stage; a second gas stagnant part formed at the rotation shaft and communicating with the process chamber via the second gas ejection port; and a flow port formed at the rotation shaft for connecting the first and second gas stagnant parts.

摘要翻译： 可以抑制金属腐蚀和基材污染，并且可以提高工艺质量和产率。 一种基板处理装置，包括：处理室; 衬底保持器; 关闭和打开处理室的盖部分; 衬底支架台; 旋转机构，旋转基板保持台; 插入所述盖部并连接到所述基板保持台和所述旋转机构的旋转轴，使得在其间形成有第一气体喷出口; 由旋转机构，盖部和旋转轴包围的第一气体滞留部; 形成在所述基板保持台上的第二气体喷出口; 第二气体停滞部，形成在所述旋转轴上并且经由所述第二气体喷出口与所述处理室连通; 以及形成在旋转轴处的流动端口，用于连接第一和第二气体停滞部分。

公开(公告)号：US08851886B2

公开(公告)日：2014-10-07

申请号：US12363059

申请日：2009-01-30

申请人： Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

发明人： Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

IPC分类号： F27D1/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/455 ,  H01L21/67098

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a non-metallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold includes a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。 在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。 歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，用于将气体供应到反应管的内部。

公开(公告)号：US09111972B2

公开(公告)日：2015-08-18

申请号：US10593282

申请日：2005-06-27

申请人： Mitsunori Takeshita ,  Tomoyuki Matsuda ,  Mitsuhiro Hirano ,  Akihiro Sato ,  Shinya Morita ,  Toshimitsu Miyata ,  Koji Shibata

发明人： Mitsunori Takeshita ,  Tomoyuki Matsuda ,  Mitsuhiro Hirano ,  Akihiro Sato ,  Shinya Morita ,  Toshimitsu Miyata ,  Koji Shibata

IPC分类号： C23C16/44 ,  H01L21/469 ,  H01L21/673 ,  H01L21/677 ,  C23C16/54 ,  H01L21/67

CPC分类号： H01L21/67303 ,  C23C16/4401 ,  C23C16/54 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6773

摘要： The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.

摘要翻译： 维护所需的尺寸减少，占地面积减少。 基板处理装置包括分别从壳体11内的后侧设置的负载锁定室41和传送室24; 以及设置在用于处理晶片1的负载锁定室41上方的处理室53.开口部分27A以及用于打开和关闭开口部分27A的打开和关闭装置28A分别设置在转印器后侧的位置 不设置负载锁定室41的室24。

公开(公告)号：US20080236488A1

公开(公告)日：2008-10-02

申请号：US10593282

申请日：2005-06-27

申请人： Mitsunori Takeshita ,  Tomoyuki Matsuda ,  Mitsuhiro Hirano ,  Akihiro Sato ,  Shinya Morita ,  Toshimitsu Miyata ,  Koji Shibata

发明人： Mitsunori Takeshita ,  Tomoyuki Matsuda ,  Mitsuhiro Hirano ,  Akihiro Sato ,  Shinya Morita ,  Toshimitsu Miyata ,  Koji Shibata

IPC分类号： C23C16/44 ,  H01L21/469

CPC分类号： H01L21/67303 ,  C23C16/4401 ,  C23C16/54 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/6773

摘要： The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamber 41 and a transfer chamber 24 respectively provided in order from the rear side within a case 11; and a processing chamber 53 provided above the load lock chamber 41 for processing wafers 1. An opening section 27A, and an opening and closing means 28A for opening and closing the opening section 27A are respectively provided in a location at the rear side of the transfer chamber 24 where the load lock chamber 41 is not arranged.

摘要翻译： 维护所需的尺寸减少，占地面积减少。 基板处理装置包括分别从壳体11内的后侧设置的负载锁定室41和传送室24; 以及设置在加载锁定室41上方的用于处理晶片1的处理室53。 开口部分27A和用于打开和关闭开口部分27A的打开和关闭装置28A分别设置在不设置负载锁定室41的传送室24的后侧的位置。

公开(公告)号：US20130248855A1

公开(公告)日：2013-09-26

申请号：US13989944

申请日：2011-11-28

申请人： Aya Miki ,  Shinya Morita ,  Toshihiro Kugimiya ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Gun Hee Kim

发明人： Aya Miki ,  Shinya Morita ,  Toshihiro Kugimiya ,  Satoshi Yasuno ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Gun Hee Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  C01G19/006 ,  C01P2006/10 ,  C04B35/01 ,  C04B35/453 ,  C04B35/457 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3293 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/548 ,  C23C14/5806 ,  C23C14/5873 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/78693

摘要： This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and the content (at %) of the metal elements contained in the oxide satisfies formulas (1) to (3) when denoted as [Zn], [Sn] and [In], respectively. [In]/([In]+[Zn]+[Sn])≧−0.53×[Zn]/([Zn]+[Sn])+0.36 (1) [In]/([In]+[Zn]+[Sn])≧2.28×[Zn]/([Zn]+[Sn])−2.01 (2) [In]/([In]+[Zn]+[Sn])≦1.1×[Zn]/([Zn]+[Sn])−0.32 (3) The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided.

摘要翻译： 用于薄膜晶体管的半导体层的氧化物含有Zn，Sn和In，并且当表示为[Zn]时，包含在氧化物中的金属元素的含量（at％）满足式（1）至（3） [Sn]和[In]。 [In] /（[In] + [Zn] + [Sn]）> = - 0.53×[Zn] /（[Zn] + [Sn]）+ 0.36（1）[In] Zn] + [Sn]）> = 2.28×[Zn] /（[Zn] + [Sn]）-2.01（2）[In] /（[In] + [Zn] + [Sn] Zn] /（[Zn] + [Sn]） - 0.32（3）本发明使得能够提供实现高迁移率且具有优异的应力阻力（施加应力之前和之后的阈值电压偏移可忽略）的薄膜晶体管氧化物 。

公开(公告)号：US20120006268A1

公开(公告)日：2012-01-12

申请号：US13239889

申请日：2011-09-22

申请人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

发明人： Takashi Ozaki ,  Tomoshi Taniyama ,  Hiroshi Unami ,  Kiyohiko Maeda ,  Shinya Morita ,  Yoshikazu Takashima ,  Sadao Hisakado

IPC分类号： C23C16/44

CPC分类号： C23C16/4409 ,  C23C16/4401 ,  C30B25/08

摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。 诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。