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    OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR
    1.
    发明申请
    OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR 审中-公开
    薄膜晶体管，溅射靶和薄膜晶体管半导体层的氧化物

    公开(公告)号：US20130270109A1

    公开(公告)日：2013-10-17

    申请号：US13994467

    申请日：2011-12-28

    申请人： Shinya Morita ,  Aya Miki ,  Satoshi Yasuno ,  Toshihiro Kugimiya ,  Tomoya Kishi

    发明人： Shinya Morita ,  Aya Miki ,  Satoshi Yasuno ,  Toshihiro Kugimiya ,  Tomoya Kishi

    IPC分类号： H01L27/01

    CPC分类号： H01L27/016 ,  C23C14/086 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/7869

    摘要： The oxides for semiconductor layers of thin-film transistors according to the present invention include: In; Zn; and at least one element (X group element) selected from the group consisting of Al, Si, Ta, Ti, La, Mg and Nb. The present invention makes it possible to provide oxides for semiconductor layers of thin-film transistors, in which connection thin-film transistors with In—Zn—O oxide semiconductors not containing Ga have favorable switching characteristics and high stress resistance, and in particular, show a small variation of the threshold voltage before and after positive bias stress tests, thereby having high stability.

    摘要翻译： 根据本发明的薄膜晶体管的半导体层的氧化物包括：In; 锌; 和选自Al，Si，Ta，Ti，La，Mg和Nb中的至少一种元素（X族元素）。 本发明使得可以提供薄膜晶体管的半导体层的氧化物，其中连接具有不含Ga的In-Zn-O氧化物半导体的薄膜晶体管具有良好的开关特性和高的耐应力性，并且特别地示出 在正偏压应力测试之前和之后的阈值电压变化很小，从而具有很高的稳定性。

    Interconnect structure and sputtering target
    4.
    发明授权
    Interconnect structure and sputtering target 有权
    互连结构和溅射靶

    公开(公告)号：US09184298B2

    公开(公告)日：2015-11-10

    申请号：US13991247

    申请日：2011-12-01

    申请人： Shinya Morita ,  Aya Miki ,  Satoshi Yasuno ,  Toshihiro Kugimiya

    发明人： Shinya Morita ,  Aya Miki ,  Satoshi Yasuno ,  Toshihiro Kugimiya

    IPC分类号： H01L27/14 ,  H01L29/786 ,  C23C14/08 ,  H01L21/02 ,  C23C14/14 ,  C23C14/34

    CPC分类号： H01L29/7869 ,  C23C14/086 ,  C23C14/14 ,  C23C14/34 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02614 ,  H01L21/02631 ,  H01L29/78693

    摘要： The interconnect structure of the present invention includes at least a gate insulator layer and an oxide semiconductor layer on a substrate, wherein the oxide semiconductor layer is a layered product having a first oxide semiconductor layer containing at least one element (Z group element) selected from the group consisting of In, Ga, Zn and Sn; and a second oxide semiconductor layer containing at least one element (X group element) selected from the group consisting of In, Ga, Zn and Sn and at least one element (Y group element) selected from the group consisting of Al, Si, Ti, Hf, Ta, Ge, W and Ni, and wherein the second oxide semiconductor layer is interposed between the first oxide semiconductor layer and the gate insulator layer. The present invention makes it possible to obtain an interconnect structure having excellent switching characteristics and high stress resistance, and in particular, showing a small variation of threshold voltage before and after the stress tests, and thereby having high stability.

    摘要翻译： 本发明的互连结构在基板上至少包括栅极绝缘体层和氧化物半导体层，其中氧化物半导体层是具有第一氧化物半导体层的层叠体，所述第一氧化物半导体层含有至少一种选自以下的元素（Z族元素） 由In，Ga，Zn和Sn组成的组; 和包含选自In，Ga，Zn和Sn中的至少一种元素（X族元素）的第二氧化物半导体层和选自Al，Si，Ti中的至少一种元素（Y族元素） ，Hf，Ta，Ge，W和Ni，并且其中所述第二氧化物半导体层插入在所述第一氧化物半导体层和所述栅极绝缘体层之间。 本发明使得可以获得具有优异的开关特性和高应力阻力的互连结构，特别是在应力测试之前和之后显示出小的阈值电压变化，从而具有高稳定性。

    OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR
    10.
    发明申请
    OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR HAVING SAID OXIDE, AND THIN-FILM TRANSISTOR 审中-公开
    薄膜晶体管半导体层氧化物，具有氧化硅的薄膜晶体管的半导体层和薄膜晶体管

    公开(公告)号：US20130341617A1

    公开(公告)日：2013-12-26

    申请号：US14004020

    申请日：2012-03-08

    申请人： Hiroaki Tao ,  Aya Miki ,  Shinya Morita ,  Satoshi Yasuno ,  Toshihiro Kugimiya ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Gun Hee Kim

    发明人： Hiroaki Tao ,  Aya Miki ,  Shinya Morita ,  Satoshi Yasuno ,  Toshihiro Kugimiya ,  Jae Woo Park ,  Je Hun Lee ,  Byung Du Ahn ,  Gun Hee Kim

    IPC分类号： H01L29/12

    CPC分类号： H01L21/02554 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02587 ,  H01L21/02631 ,  H01L21/477 ,  H01L29/12 ,  H01L29/66969 ,  H01L29/7869

    摘要： The oxide of the present invention for thin-film transistors is an In—Zn—Sn-based oxide containing In, Zn, and Sn, wherein when the respective contents (atomic %) of metal elements contained in the In—Zn—Sn-based oxide are expressed by [Zn], [Sn], and [In], the In—Zn—Sn-based oxide fulfills the following expressions (2) and (4) when [In]/([In]+[Sn])≦0.5; or the following expressions (1), (3), and (4) when [In]/([In]+[Sn])≧0.5. [In]/([In]+[Zn]+[Sn])≦0.3 - - - (1), [In]/([In]+[Zn]+[Sn])≦1.4×{[Zn]/([Zn]+[Sn])}−0.5 - - - (2), [Zn]/([In]+[Zn]+[Sn])≦0.83 - - - (3), and 0.1≦[In]/([In]+[Zn]+[Sn]) - - - (4). According to the present invention, oxide thin films for thin-film transistors can be obtained, which provide TFTs with excellent switching characteristics, and which have high sputtering rate in the sputtering and properly controlled etching rate in the wet etching.

    摘要翻译： 用于薄膜晶体管的本发明的氧化物是含有In，Zn和Sn的In-Zn-Sn系氧化物，其中，当In-Zn-Sn系中含有的金属元素的含量（原子％ 当[In] /（[In] + [Sn]）[Zn]，[In] + [Sn]表示[Zn]，[Sn]和[In]时，In-Zn-Sn系氧化物满足下述（2） ]）@ 0.5; 或[In] /（[In] + [Sn]）> = 0.5时的以下表达式（1），（3）和（4）。 [In] + [Zn] + [Sn]）@ 0.3 - - - （1），[In] /（[In] + [Zn] + [Sn]）@ 1.4×{[Zn] /([Zn]+[Sn])}-0.5 - - - （2），[Zn] /（[In] + [Zn] + [Sn]）@ 0.83 - - - （3） In] /（[In] + [Zn] + [Sn]） - - - （4）。 根据本发明，可以获得用于薄膜晶体管的氧化物薄膜，其提供具有优异的开关特性的TFT，并且在溅射中具有高溅射速率并且在湿蚀刻中具有适当控制的蚀刻速率。