公开(公告)号：US20120220105A1

公开(公告)日：2012-08-30

申请号：US13397837

申请日：2012-02-16

申请人： Shirou OZAKI ,  Masayuki Takeda ,  Norikazu Nakamura ,  Junichi Kon

发明人： Shirou OZAKI ,  Masayuki Takeda ,  Norikazu Nakamura ,  Junichi Kon

IPC分类号： H01L21/20 ,  B08B7/00 ,  B08B3/08

CPC分类号： H01L21/02057 ,  H01L21/0272 ,  H01L21/67057 ,  H01L29/66462

摘要： A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

摘要翻译： 制造半导体器件的方法包括：保持具有相对于垂直方向和水平方向倾斜的表面的半导体衬底; 并将半导体衬底浸入包含酸的清洗溶液中。

公开(公告)号：US08815017B2

公开(公告)日：2014-08-26

申请号：US13951803

申请日：2013-07-26

申请人： Shirou Ozaki ,  Masayuki Takeda ,  Norikazu Nakamura ,  Junichi Kon

发明人： Shirou Ozaki ,  Masayuki Takeda ,  Norikazu Nakamura ,  Junichi Kon

IPC分类号： H01L21/00 ,  B08B3/08 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/02057 ,  H01L21/0272 ,  H01L21/67057 ,  H01L29/66462

摘要： A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

摘要翻译： 制造半导体器件的方法包括：保持具有相对于垂直方向和水平方向倾斜的表面的半导体衬底; 并将半导体衬底浸入包含酸的清洗溶液中。

公开(公告)号：US08557144B2

公开(公告)日：2013-10-15

申请号：US12560866

申请日：2009-09-16

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： G03F7/20 ,  G03F7/11 ,  C09D5/24

CPC分类号： G02B1/111 ,  C08G2261/3223 ,  C08G2261/76 ,  C08K5/16 ,  C08K5/42 ,  C09D5/24 ,  C09D165/00 ,  G02B1/116 ,  G02B1/16 ,  G03F7/091 ,  G03F7/093 ,  Y10T428/11 ,  Y10T428/2481

摘要： A material for forming a conductive antireflection film contains: a base resin having conductivity; a crosslinking agent; a thermal acid generator; and a solvent.

摘要翻译： 用于形成导电性抗反射膜的材料包含：具有导电性的基础树脂; 交联剂; 热酸发生器; 和溶剂。

公开(公告)号：US20100009296A1

公开(公告)日：2010-01-14

申请号：US12560866

申请日：2009-09-16

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： G03F7/20 ,  B05D5/12 ,  G11B5/127 ,  B32B3/10 ,  G03C1/00

CPC分类号： G02B1/111 ,  C08G2261/3223 ,  C08G2261/76 ,  C08K5/16 ,  C08K5/42 ,  C09D5/24 ,  C09D165/00 ,  G02B1/116 ,  G02B1/16 ,  G03F7/091 ,  G03F7/093 ,  Y10T428/11 ,  Y10T428/2481

摘要： A material for forming a conductive antireflection film contains: a base resin having conductivity; a crosslinking agent; a thermal acid generator; and a solvent.

摘要翻译： 用于形成导电性抗反射膜的材料包含：具有导电性的基础树脂; 交联剂; 热酸发生器; 和溶剂。

公开(公告)号：US20090081593A1

公开(公告)日：2009-03-26

申请号：US12292170

申请日：2008-11-13

申请人： Junichi Kon ,  Ei Yano

发明人： Junichi Kon ,  Ei Yano

IPC分类号： H01L21/02 ,  G03F7/20

CPC分类号： G03F7/0397 ,  G03F7/0045 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/128 ,  Y10S430/143

摘要： The resist material contains a photo-acid generator having an absorption peak to exposure light having a wavelength of less than 300 nm, and a second photo-acid generator having an absorption peak to exposure light having a wavelength of 300 nm or more. The method for forming a resist pattern comprises a step for selectively exposing which exposes a coating film of the resist material to an exposure light having a wavelength of less than 300 nm, and a step for selectively exposing by using an exposure light having a wavelength of 300 nm or more. The semiconductor device comprises a pattern formed by the resist pattern. The method for forming a semiconductor device comprises a step for forming a resist pattern on an underlying layer by the aforementioned manufacturing method, and a step for patterning the underlying layer by etching using the resist pattern as a mask.

摘要翻译： 抗蚀剂材料包含具有对波长小于300nm的曝光光具有吸收峰的光酸产生器和具有波长为300nm或更大的曝光光的吸收峰的第二光酸产生器。 形成抗蚀剂图案的方法包括用于选择性曝光的步骤，其将抗蚀剂材料的涂膜暴露于波长小于300nm的曝光光，以及通过使用具有波长为 300nm以上。 半导体器件包括由抗蚀剂图案形成的图案。 用于形成半导体器件的方法包括通过上述制造方法在下层形成抗蚀剂图案的步骤，以及通过使用抗蚀剂图案作为掩模通过蚀刻对下层进行图案化的步骤。

公开(公告)号：US06773867B2

公开(公告)日：2004-08-10

申请号：US10291723

申请日：2002-11-12

申请人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

发明人： Koji Nozaki ,  Takahisa Namiki ,  Ei Yano ,  Junichi Kon ,  Miwa Kozawa

IPC分类号： G03C500

CPC分类号： H01L21/0274 ,  G03F7/0045 ,  G03F7/038 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/28123 ,  H01L21/312 ,  Y10S430/106 ,  Y10S430/111 ,  Y10S430/128

摘要： The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

公开(公告)号：US06465137B2

公开(公告)日：2002-10-15

申请号：US09288781

申请日：1999-04-09

申请人： Keiji Watanabe ,  Miwa Kozawa ,  Ei Yano ,  Takahisa Namiki ,  Koji Nozaki ,  Junichi Kon ,  Eiichi Hoshino ,  Masahiro Uraguchi ,  Toshikatsu Minagawa ,  Yuichi Yamamoto

发明人： Keiji Watanabe ,  Miwa Kozawa ,  Ei Yano ,  Takahisa Namiki ,  Koji Nozaki ,  Junichi Kon ,  Eiichi Hoshino ,  Masahiro Uraguchi ,  Toshikatsu Minagawa ,  Yuichi Yamamoto

IPC分类号： G03F900

CPC分类号： G03F7/004 ,  G03F7/0045

摘要： A resist composition comprising, in a resist, an additive which has a melting point-of 160° C. or above, contains no aromatic ring, has a molecular size of no greater than 50 Å and is soluble in the developing solution for the resist, at 1-50 parts by weight with respect to 100 parts by solid weight of the resist, as well as a pattern forming process employing it. It thereby becomes possible to obtain high-resolution resist patterns.

摘要翻译： 抗蚀剂组合物，在抗蚀剂中含有熔点为160℃以上的添加剂，不含芳香环，分子大小不大于且可溶于抗蚀剂的显影液中 相对于100重量份的抗蚀剂的固体重量为1-50重量份，以及使用它的图案形成方法。 从而可以获得高分辨率抗蚀剂图案。

公开(公告)号：US08759161B2

公开(公告)日：2014-06-24

申请号：US13347951

申请日：2012-01-11

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： H01L21/56

CPC分类号： H01L21/76829 ,  C09D129/04 ,  C09D129/14 ,  C09D139/06 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76849 ,  H01L23/49894 ,  H01L23/53295 ,  H01L2924/0002 ,  C08L25/18 ,  H01L2924/00

摘要： To provide a surface coating method, which contains applying a surface coating material to a layered structure so as to cover at least a surface of an insulating film of the layered structure, to form a coating on the surface of the insulating film, wherein the surface coating material contains a water-soluble resin, an organic solvent, and water, and wherein the layered structure contains the insulating film exposed to an outer surface, and a patterned metal wiring exposed to an outer surface.

摘要翻译： 为了提供一种表面涂覆方法，其包括将表面涂层材料施加到层状结构以覆盖层状结构的绝缘膜的至少一个表面，以在绝缘膜的表面上形成涂层，其中表面 涂料含有水溶性树脂，有机溶剂和水，并且其中所述层状结构包含暴露于外表面的绝缘膜，以及暴露于外表面的图案化金属布线。

公开(公告)号：US20110081615A1

公开(公告)日：2011-04-07

申请号：US12967615

申请日：2010-12-14

申请人： Junichi Kon

发明人： Junichi Kon

IPC分类号： G03F7/20 ,  C08L33/12 ,  C08L29/04 ,  C08L81/00

CPC分类号： G03F7/091 ,  G03F7/11 ,  G03F7/2059

摘要： A material for forming a resist sensitization film contains a metal salt, a resin and, a solvent. A method for producing a semiconductor device contains applying such material (or a resist) onto a processing surface so as to form a resist sensitization film or a resist film, applying a resist (or the aforementioned material) onto the resist sensitization film so as to form a resist film (or a resist sensitization film); exposing the resist film (or the resist film and the resist sensitization film) to exposure light, and developing the exposed resist film (or the exposed resist film and resist sensitization film) so as to form a resist pattern; and etching the processing surface using the resist pattern as a mask so as to pattern the processing surface.

摘要翻译： 用于形成抗蚀剂增感膜的材料含有金属盐，树脂和溶剂。 制造半导体器件的方法包括将这种材料（或抗蚀剂）施加到处理表面上以形成抗蚀剂增感膜或抗蚀剂膜，将抗蚀剂（或上述材料）施加到抗蚀剂增感膜上，以便 形成抗蚀剂膜（或抗蚀剂增感膜）; 将抗蚀剂膜（或抗蚀剂膜和抗蚀剂增感膜）暴露于曝光光，并使曝光的抗蚀剂膜（或曝光的抗蚀剂膜和抗蚀剂增感膜）显影以形成抗蚀剂图案; 并使用抗蚀剂图案作为掩模来蚀刻处理表面，以便对处理表面进行图案化。

公开(公告)号：US07830013B2

公开(公告)日：2010-11-09

申请号：US11395263

申请日：2006-04-03

申请人： Junichi Kon ,  Ei Yano ,  Yoshihiro Nakata ,  Tadahiro Imada

发明人： Junichi Kon ,  Ei Yano ,  Yoshihiro Nakata ,  Tadahiro Imada

IPC分类号： H01L23/12 ,  H01L23/48 ,  H01L21/4763 ,  H01L51/40

CPC分类号： C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/3122 ,  H01L21/76807

摘要： The present invention aims at providing: a material for forming an adhesion reinforcing layer which can reinforce the adhesion between a low dielectric constant film, especially a low dielectric constant film containing an inorganic material, and other members; an adhesion reinforcing layer formed by the said material and exhibits superior adhesion; a fast and highly reliable semiconductor device having the adhesion reinforcing layer; and a manufacturing method thereof. The material for forming an adhesion reinforcing layer contains at least any one of organoalkoxysilane having a basic functional group, a basic additive and organoalkoxysilane. The adhesion reinforcing layer is formed by the said material. The manufacturing method of a semiconductor device includes a process for forming a low dielectric constant film and, at least before or after the process for forming a low dielectric constant film, a process for forming an adhesion reinforcing layer with the said material.

摘要翻译： 本发明的目的在于提供：一种用于形成粘合增强层的材料，其可以增强低介电常数膜，特别是含有无机材料的低介电常数膜和其它构件之间的粘附性; 由所述材料形成的附着增强层，具有优异的附着力; 具有粘合增强层的快速且高可靠性的半导体器件; 及其制造方法。 用于形成粘合增强层的材料含有至少一种具有碱性官能团的有机烷氧基硅烷，碱性添加剂和有机烷氧基硅烷。 粘合增强层由所述材料形成。 半导体器件的制造方法包括形成低介电常数膜的方法，并且至少在形成低介电常数膜的工艺之前或之后，与所述材料形成粘合增强层的工艺。