公开(公告)号：US20080217563A1

公开(公告)日：2008-09-11

申请号：US12040934

申请日：2008-03-03

申请人： Sho KATO ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA

发明人： Sho KATO ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/20 ,  H01L21/67

CPC分类号： H01L27/1266 ,  B23K26/0884 ,  B23K2101/006 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/67017 ,  H01L21/67225 ,  H01L27/1255 ,  H01L27/1285

摘要： The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.

摘要翻译： 本发明是一种半导体制造装置，通过该半导体制造装置可以以低和稳定的浓度将杂质引入有源层，以形成阈值电压变化小的半导体元件。 在包括洗涤单元的半导体制造装置中， 用于将杂质附着到半导体膜的表面的杂质引入单元; 用于使已经附着有杂质的半导体膜结晶的激光结晶单元; 并且传送机器人时，通过在杂质导入单元中的衬底的曝光时间长度来控制附着到半导体膜的杂质的量，并且半导体膜在含有低浓度杂质的结晶半导体膜时结晶 通过激光结晶同时形成。

公开(公告)号：US20110318908A1

公开(公告)日：2011-12-29

申请号：US13227146

申请日：2011-09-07

申请人： Sho KATO ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA

发明人： Sho KATO ,  Hidekazu MIYAIRI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/268

CPC分类号： H01L27/1266 ,  B23K26/0884 ,  B23K2101/006 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/67017 ,  H01L21/67225 ,  H01L27/1255 ,  H01L27/1285

摘要： The present invention is a semiconductor manufacturing apparatus by which an impurity can be introduced into an active layer at a low and a stable concentration in order to form semiconductor elements that have little variation in threshold voltage. In the semiconductor manufacturing apparatus that includes a washing unit; an impurity introduction unit used to attach the impurity to the surface of the semiconductor film; a laser crystallization unit used to crystallize the semiconductor film to which an impurity has been attached; and transfer robots, the amount of the impurity attached to the semiconductor film is controlled by the length of time of exposure of the substrate in the impurity introduction unit, and the semiconductor film is crystallized while a crystalline semiconductor film that contains an impurity at low concentration is formed simultaneously by laser crystallization.

摘要翻译： 本发明是一种半导体制造装置，通过该半导体制造装置可以以低和稳定的浓度将杂质引入有源层，以形成阈值电压变化小的半导体元件。 在包括洗涤单元的半导体制造装置中， 用于将杂质附着到半导体膜的表面的杂质引入单元; 用于使已经附着有杂质的半导体膜结晶的激光结晶单元; 并且传送机器人时，通过在杂质导入单元中的衬底的曝光时间长度来控制附着到半导体膜的杂质的量，并且半导体膜在含有低浓度杂质的结晶半导体膜时结晶 通过激光结晶同时形成。

公开(公告)号：US20080206967A1

公开(公告)日：2008-08-28

申请号：US12033637

申请日：2008-02-19

申请人： Hidekazu MIYAIRI ,  Sho KATO

发明人： Hidekazu MIYAIRI ,  Sho KATO

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02675 ,  H01L27/1237 ,  H01L27/1281 ,  H01L27/1285

摘要： A thin semiconductor film is crystallized in a high yield by being irradiated with laser light. An insulating film, a semiconductor film, an insulating film, and a semiconductor film are stacked in this order over a substrate. Laser light irradiation is performed from above the substrate to melt the semiconductor films of a lower layer and an upper layer, whereby the semiconductor film of the lower layer is crystallized. With the laser light irradiation, the semiconductor film of the upper layer changes to a liquid state, thereby reflecting the laser light and preventing the semiconductor film of the lower layer from being overheated with the laser light. Further, by melting the semiconductor film of the upper layer as well, time for melting the semiconductor film of the lower layer can be extended.

摘要翻译： 通过用激光照射，半导体薄膜以高产率结晶。 依次层叠绝缘膜，半导体膜，绝缘膜，半导体膜。 从基板上方进行激光照射，熔融下层和上层的半导体膜，由此下层的半导体膜结晶化。 通过激光照射，上层的半导体膜变为液态，从而反射激光，防止下层的半导体膜被激光过热。 此外，通过熔化上层的半导体膜也可以延长熔融下层半导体膜的时间。

公开(公告)号：US20100291755A1

公开(公告)日：2010-11-18

申请号：US12844856

申请日：2010-07-28

申请人： Fumito ISAKA ,  Sho KATO ,  Kosei NEI ,  Ryu KOMATSU ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

发明人： Fumito ISAKA ,  Sho KATO ,  Kosei NEI ,  Ryu KOMATSU ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.

摘要翻译： 通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

公开(公告)号：US20100275990A1

公开(公告)日：2010-11-04

申请号：US12768351

申请日：2010-04-27

申请人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Sho KATO

发明人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Sho KATO

IPC分类号： H01L31/00 ,  H01L21/78 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L31/028 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1864 ,  H01L31/1892 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： To provide a novel photoelectric conversion device and a manufacturing method thereof. Over a base substrate having a light-transmitting property, a light-transmitting insulating layer and a single crystal semiconductor layer over the insulating layer are formed. A plurality of first impurity semiconductor layers each having one conductivity type is provided in a band shape in a surface layer of the single crystal semiconductor layer or on a surface of the single crystal semiconductor layer, and a plurality of second impurity semiconductor layers each having a conductivity type which is opposite to the one conductivity type is provided in a band shape in such a manner that the first impurity semiconductor layers and the second impurity semiconductor layers are alternately provided and do not overlap with each other. First electrodes in contact with the first impurity semiconductor layers and second electrodes in contact with the second impurity semiconductor layers are provided, and a back contact cell is formed, whereby a photoelectric conversion device provided with a photo acceptance surface on the base substrate side is formed.

摘要翻译： 提供一种新颖的光电转换装置及其制造方法。 在绝缘层上方形成具有透光性的基底基板，透光绝缘层和单晶半导体层。 在单晶半导体层的表面层或单晶半导体层的表面上，具有一个导电型的多个第一杂质半导体层被设置成带状，以及多个第二杂质半导体层， 以与第一杂质半导体层和第二杂质半导体层交替地设置并且彼此不重叠的带状形式提供与一种导电类型相反的导电类型。 提供与第一杂质半导体层和与第二杂质半导体层接触的第二电极接触的第一电极，形成背接触电池，由此形成在基底侧上设置有光接收表面的光电转换装置 。

公开(公告)号：US20090197392A1

公开(公告)日：2009-08-06

申请号：US12360419

申请日：2009-01-27

申请人： Fumito ISAKA ,  Sho KATO ,  Kosei NEI ,  Ryu KOMATSU ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

发明人： Fumito ISAKA ,  Sho KATO ,  Kosei NEI ,  Ryu KOMATSU ,  Tatsuya MIZOI ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： An SOI substrate is manufactured by a method in which a first insulating film is formed over a first substrate over which a plurality of first single crystal semiconductor films is formed; the first insulating film is planarized; heat treatment is performed on a single crystal semiconductor substrate attached to the first insulating film; a second single crystal semiconductor film is formed; a third single crystal semiconductor film is formed using the first single crystal semiconductor films and the second single crystal semiconductor films as seed layers; a fragile layer is formed by introducing ions into the third single crystal semiconductor film; a second insulating film is formed over the third single crystal semiconductor film; heat treatment is performed on a second substrate superposed on the second insulating film; and a part of the third single crystal semiconductor film is fixed to the second substrate.

摘要翻译： 通过在形成有多个第一单晶半导体膜的第一基板上形成第一绝缘膜的方法制造SOI衬底; 第一绝缘膜被平坦化; 对附着在第一绝缘膜上的单晶半导体衬底进行热处理; 形成第二单晶半导体膜; 使用第一单晶半导体膜和第二单晶半导体膜作为晶种层形成第三单晶半导体膜; 通过将离子引入第三单晶半导体膜中形成脆性层; 在第三单晶半导体膜上形成第二绝缘膜; 在叠置在第二绝缘膜上的第二基板上进行热处理; 并且第三单晶半导体膜的一部分固定到第二基板。

公开(公告)号：US20100129948A1

公开(公告)日：2010-05-27

申请号：US12621541

申请日：2009-11-19

申请人： Fumito ISAKA ,  Sho KATO ,  Yu ARITA ,  Akihisa SHIMOMURA

发明人： Fumito ISAKA ,  Sho KATO ,  Yu ARITA ,  Akihisa SHIMOMURA

IPC分类号： H01L21/18 ,  H01L31/18

CPC分类号： H01L21/76254 ,  H01L31/028 ,  H01L31/075 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： An object is to manufacture a semiconductor substrate having a single crystal semiconductor layer with favorable characteristics, without requiring CMP treatment and/or heat treatment at high temperature. In addition, another object is to improve productivity of semiconductor substrates. Vapor-phase epitaxial growth is performed by using a first single crystal semiconductor layer provided over a first substrate as a seed layer, whereby a second single crystal semiconductor layer is formed over the first single crystal semiconductor layer, and separation is performed at an interface of the both layers. Thus, the second single crystal semiconductor layer is transferred to the second substrate to provide a semiconductor substrate, and the semiconductor substrate is reused by performing laser light treatment on the seed layer.

摘要翻译： 本发明的目的是制造具有良好特性的单晶半导体层的半导体衬底，而不需要在高温下进行CMP处理和/或热处理。 此外，另一个目的是提高半导体衬底的生产率。 通过使用设置在第一基板上的第一单晶半导体层作为晶种层来进行气相外延生长，由此在第一单晶半导体层上形成第二单晶半导体层，并且在第一单晶半导体层的界面上进行分离 两层。 因此，将第二单晶半导体层转移到第二基板以提供半导体衬底，并且通过对籽晶层进行激光处理来重新使用半导体衬底。

公开(公告)号：US20110053343A1

公开(公告)日：2011-03-03

申请号：US12942156

申请日：2010-11-09

申请人： Sho KATO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Hiromichi GODO ,  Akihisa SHIMOMURA

发明人： Sho KATO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Hiromichi GODO ,  Akihisa SHIMOMURA

IPC分类号： H01L21/20

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L27/1203 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78696

摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.

摘要翻译： 提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。 在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠 半导体膜。 使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

公开(公告)号：US20110041910A1

公开(公告)日：2011-02-24

申请号：US12854201

申请日：2010-08-11

申请人： Akihisa SHIMOMURA ,  Sho KATO ,  Yoshikazu HIURA

发明人： Akihisa SHIMOMURA ,  Sho KATO ,  Yoshikazu HIURA

IPC分类号： H01L31/036 ,  H01L31/18

CPC分类号： H01L31/022441 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： A novel photoelectric conversion device and a manufacturing method thereof are provided. The photoelectric conversion device includes an insulating layer over a light-transmitting base substrate; a single crystal semiconductor layer provided with a plurality of depressions which are filled with the insulating layer; a plurality of first impurity semiconductor layers formed in stripes having one conductivity type and a plurality of second impurity semiconductor layers formed in stripes having a conductivity type which is opposite to the one conductivity type, which are arranged alternately and do not overlap with each other, in a surface layer or over a surface of the single crystal semiconductor layer; first electrodes which are in contact with the first impurity semiconductor layers; and second electrodes which are in contact with the second impurity semiconductor layers.

摘要翻译： 提供了一种新颖的光电转换装置及其制造方法。 光电转换装置包括在透光基底基板上的绝缘层; 设置有填充有绝缘层的多个凹部的单晶半导体层; 形成为具有一种导电类型的多个第一杂质半导体层和多个第二杂质半导体层，其多个第二杂质半导体层形成为具有与所述一种导电类型相反的导电类型的条带，它们交替排列并且彼此不重叠， 在单晶半导体层的表面层或表面上; 与第一杂质半导体层接触的第一电极; 以及与第二杂质半导体层接触的第二电极。

公开(公告)号：US20100081254A1

公开(公告)日：2010-04-01

申请号：US12564973

申请日：2009-09-23

申请人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Sho KATO ,  Takashi HIROSE

发明人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Sho KATO ,  Takashi HIROSE

IPC分类号： H01L21/762 ,  H01L21/20

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/0262 ,  Y02E10/547

摘要： An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.

摘要翻译： 本发明的目的是提供具有非常有利特性的单晶半导体层，而不需要在高温下进行CMP处理或热处理。 此外，目的在于提供具有上述单晶半导体层的半导体衬底（或SOI衬底）。 在衬底上的第二单晶半导体层的表面上，通过气相外延生长法形成第一单晶半导体层; 第一单晶半导体层和基底基板之间具有绝缘层彼此接合; 并且第一单晶半导体层和第二单晶半导体层在它们之间的界面处彼此分离，以便在绝缘层之间提供第一单晶半导体层，其中绝缘层位于基底衬底上。 因此，可以制造SOI衬底。