公开(公告)号：US20120206174A1

公开(公告)日：2012-08-16

申请号：US13503151

申请日：2010-10-15

申请人： Sho Maruyama ,  Yoshiyuki Kikuchi

发明人： Sho Maruyama ,  Yoshiyuki Kikuchi

IPC分类号： H03K3/00

CPC分类号： H03K17/0828

摘要： A short-circuit protection circuit (12) configured to protect a switching element from an overcurrent includes: a potential decreasing means for decreasing a potential of a gate terminal when a main circuit current is an overcurrent; a feedback means for performing feedback control on an amount of a decrease in the gate potential caused by the potential decreasing means according to a current amount of the main circuit current; and a phase advancing means for performing phase advance compensation in a feedback loop under the feedback control.

摘要翻译： 配置为保护开关元件免于过电流的短路保护电路（12）包括：当主电路电流为过电流时减小栅极端子的电位的电位降低装置; 反馈装置，用于根据主电路电流的当前量对由电位降低装置引起的栅极电位的降低量执行反馈控制; 以及在所述反馈控制下在反馈回路中执行相位提前补偿的相位提前装置。

公开(公告)号：US08513986B2

公开(公告)日：2013-08-20

申请号：US13503151

申请日：2010-10-15

申请人： Sho Maruyama ,  Yoshiyuki Kikuchi

发明人： Sho Maruyama ,  Yoshiyuki Kikuchi

IPC分类号： H03K3/00

CPC分类号： H03K17/0828

摘要： A short-circuit protection circuit (12) configured to protect a switching element from an overcurrent includes: a potential decreasing means for decreasing a potential of a gate terminal when a main circuit current is an overcurrent; a feedback means for performing feedback control on an amount of a decrease in the gate potential caused by the potential decreasing means according to a current amount of the main circuit current; and a phase advancing means for performing phase advance compensation in a feedback loop under the feedback control.

摘要翻译： 配置为保护开关元件免于过电流的短路保护电路（12）包括：当主电路电流为过电流时减小栅极端子的电位的电位降低装置; 反馈装置，用于根据主电路电流的当前量对由电位降低装置引起的栅极电位的降低量执行反馈控制; 以及在所述反馈控制下在反馈回路中执行相位提前补偿的相位提前装置。

公开(公告)号：US20110186633A1

公开(公告)日：2011-08-04

申请号：US12737774

申请日：2008-08-21

申请人： Akihiro Okabe ,  Yoshio Kobayashi ,  Isao Arai ,  Tatsuru Sato ,  Masahito Aihara ,  Kaori Takano ,  Yoshiyuki Kikuchi

发明人： Akihiro Okabe ,  Yoshio Kobayashi ,  Isao Arai ,  Tatsuru Sato ,  Masahito Aihara ,  Kaori Takano ,  Yoshiyuki Kikuchi

IPC分类号： G06K7/00 ,  G06K19/06

CPC分类号： G06Q10/08 ,  G06F3/147 ,  G09G2380/04

摘要： Provided are an electronic shelf label system, a product price management device, a portable terminal device, an electronic shelf label device, a product price management method, a product price update method, a product price management program, and a product price update program, which are capable of changing display of an electronic shelf label in a place where the electronic shelf label is installed. A handy terminal (105) reads, from a shelf label (104), identification information of the shelf label (104), and transmits, to a communication controller (102), price information of a product that is input to the handy terminal (105) itself and the identification information of the shelf label (104). The communication controller (102) stores the identification information of the shelf label (104) and the price information in association with each other, updates the price information associated with the same identification information as the received identification information, as the received price information, and transmits the updated price information to the shelf label (104). The shelf label (104) displays the received price information.

摘要翻译： 提供电子货架标签系统，产品价格管理装置，便携式终端装置，电子货架标签装置，产品价格管理方法，产品价格更新方法，产品价格管理程序和产品价格更新程序， 其能够在安装电子货架标签的地方改变电子货架标签的显示。 方便终端（105）从货架标签（104）读取货架标签（104）的识别信息，并向通信控制器（102）发送输入到方便终端的产品的价格信息（ 105）本身和货架标签（104）的识别信息。 通信控制器102相互关联地存储货架标签（104）的标识信息和价格信息，作为接收到的价格信息更新与接收到的标识信息相同的标识信息相关联的价格信息，以及 将更新的价格信息发送到货架标签（104）。 货架标签（104）显示收到的价格信息。

公开(公告)号：US20100019356A1

公开(公告)日：2010-01-28

申请号：US12220625

申请日：2008-07-24

申请人： Yoshiyuki Kikuchi

发明人： Yoshiyuki Kikuchi

IPC分类号： H01L23/532 ,  H01L21/31 ,  H01L21/768

CPC分类号： H01L21/76826 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/3127 ,  H01L21/3212 ,  H01L21/76814 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a semiconductor device. The semiconductor device includes a fluorocarbon film formed on a substrate and a film containing metal formed on the fluorocarbon film, wherein the content amount of fluorine atom on the fluorocarbon film, which contacts the film containing metal, is in a predetermined range.

摘要翻译： 本发明涉及一种半导体器件。 半导体装置包括在基板上形成的氟碳膜和形成在氟碳膜上的含有金属的膜，其中与含有金属的膜接触的氟碳膜上的氟原子的含量在预定范围内。

公开(公告)号：US07633490B2

公开(公告)日：2009-12-15

申请号：US11552800

申请日：2006-10-25

申请人： Kazuhito Ohshita ,  Akihisa Ito ,  Yoshiyuki Kikuchi ,  Kenji Watanabe ,  Shoji Suzuki

发明人： Kazuhito Ohshita ,  Akihisa Ito ,  Yoshiyuki Kikuchi ,  Kenji Watanabe ,  Shoji Suzuki

IPC分类号： G09G5/00

CPC分类号： G09G5/08 ,  G06F3/023 ,  G06F3/03547 ,  G06F3/038 ,  G06F3/0383 ,  G06F3/0416 ,  G09G2310/04

摘要： An input device is provided. The input device includes a key input unit having a plurality of input keys and an input operation unit. A key input monitor monitors a key input to the key input unit. A timer measures a setting time upon the key input. A relay driver is operative to acquire and output an operation signal output from the input operation unit as a control signal and monitor the operation signal. The key input monitor is operative to initiate the timer when the key input to the key input unit is detected and set the relay driver to an output inhibition state. The relay driver is operative to release the output inhibition state such that the control signal is normally output when it is detected that the operation signal is a predetermined operation input within the setting time.

摘要翻译： 提供输入装置。 输入装置包括具有多个输入键的键输入单元和输入操作单元。 键输入监视器监视键输入单元的键输入。 定时器测量键输入时的设定时间。 继电器驱动器用于获取并输出从输入操作单元输出的操作信号作为控制信号并监视操作信号。 当输入到键输入单元的键被检测并且将继电器驱动器设置为输出禁止状态时，键输入监视器用于启动定时器。 继电器驱动器操作以释放输出禁止状态，使得当在设定时间内检测到操作信号是预定的操作输入时，控制信号通常被输出。

公开(公告)号：US20080246125A1

公开(公告)日：2008-10-09

申请号：US12157795

申请日：2008-06-13

申请人： Yoshiyuki Kikuchi

发明人： Yoshiyuki Kikuchi

IPC分类号： H01L23/485 ,  H01L21/768

CPC分类号： H01L21/0212 ,  C23C16/26 ,  C23C16/345 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02304 ,  H01L21/3146 ,  H01L21/31608 ,  H01L21/3185 ,  H01L21/76811 ,  H01L21/76832 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention is a semiconductor device characterized by including a substrate, an insulating film consisting of a fluorine added carbon film formed on the substrate, a barrier layer consisting of a silicon nitride film and a film containing silicon, carbon, and nitride formed on the insulating film, and a hard mask layer having a film containing silicon and oxygen formed on the barrier layer, wherein the barrier layer consists of a silicon nitride film and a film containing silicon, carbon, and nitride that are laminated from the bottom in that order, and functions to prevent the fluorine in the fluorine added carbon film from moving to the hard mask layer.

摘要翻译： 本发明是一种半导体器件，其特征在于，包括：基板，由形成在基板上的氟添加碳膜构成的绝缘膜，由氮化硅膜构成的阻挡层和形成于该基板上的硅，碳和氮化物的膜 绝缘膜和在阻挡层上形成有含有硅和氧的膜的硬掩模层，其中阻挡层由氮化硅膜和含有硅，碳和氮的膜组成，该膜从底部按顺序层压 ，并且用于防止氟添加碳膜中的氟移动到硬掩模层。

公开(公告)号：USD482693S1

公开(公告)日：2003-11-25

申请号：US29171619

申请日：2002-11-26

申请人： Atsushi Nishio ,  Takashi Kawasaki ,  Yoshiyuki Kikuchi

设计人： Atsushi Nishio ,  Takashi Kawasaki ,  Yoshiyuki Kikuchi

公开(公告)号：USD470850S1

公开(公告)日：2003-02-25

申请号：US29162361

申请日：2002-06-17

申请人： Atsushi Nishio ,  Takashi Kawasaki ,  Yoshiyuki Kikuchi ,  Satoru Karahashi

设计人： Atsushi Nishio ,  Takashi Kawasaki ,  Yoshiyuki Kikuchi ,  Satoru Karahashi

公开(公告)号：US20130078799A1

公开(公告)日：2013-03-28

申请号：US13244371

申请日：2011-09-24

申请人： Yoshiyuki Kikuchi

发明人： Yoshiyuki Kikuchi

IPC分类号： H01L21/768

CPC分类号： H01L21/76801 ,  C23C14/20 ,  C23C14/5806 ,  C23C14/5873 ,  C23C16/22 ,  C23C16/45565 ,  C23C16/511 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/76841 ,  H01L21/76855 ,  H01L21/76864

摘要： A method of forming metal carbide barrier layers for fluorocarbon films in semiconductor devices is described. The method includes depositing a fluorocarbon film on a substrate and depositing a metal-containing layer on the fluorocarbon film at a first temperature, where the metal-containing layer reacts with the fluorocarbon film to form a metal fluoride layer at an interface between the metal-containing layer and the fluorocarbon film. The method further includes heat-treating the metal-containing layer at a second temperature that is greater than the first temperature, wherein the heat-treating the metal-containing layer removes fluorine from the metal fluoride layer by diffusion through the metal-containing layer and forms a metal carbide barrier layer at the interface between the metal-containing layer and the fluorocarbon film, and wherein the metal-containing layer survives the heat-treating at the second temperature without blistering or pealing.

摘要翻译： 描述了在半导体器件中形成氟碳膜的金属碳化物阻挡层的方法。 该方法包括在基片上沉积氟碳膜，并在第一温度下在氟碳膜上沉积含金属层，其中含金属层与碳氟化合物膜反应，在金属 - 含氟层和氟碳膜。 该方法还包括在大于第一温度的第二温度下对含金属层进行热处理，其中热处理含金属层通过扩散通过含金属层从金属氟化物层除去氟， 在含金属层和氟碳膜之间的界面处形成金属碳化物阻挡层，并且其中含金属层在第二温度下经受热处理而没有起泡或发泡。

公开(公告)号：US08334204B2

公开(公告)日：2012-12-18

申请号：US12220555

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Shinji Ide ,  Yoshiyuki Kikuchi

发明人： Takaaki Matsuoka ,  Shinji Ide ,  Yoshiyuki Kikuchi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/3148

摘要： The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.

摘要翻译： 本发明涉及一种半导体器件的制造方法，该方法包括在基板上形成中间膜的工艺，在中间层中形成开口的工序，填充开口的导电层的形成工序，以及 在导电层的表面上形成盖膜的工艺。 在形成盖膜的工艺中，同时进行导电层表面的还原处理和膜的形成。