公开(公告)号：US08334204B2

公开(公告)日：2012-12-18

申请号：US12220555

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Shinji Ide ,  Yoshiyuki Kikuchi

发明人： Takaaki Matsuoka ,  Shinji Ide ,  Yoshiyuki Kikuchi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/3148

摘要： The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.

摘要翻译： 本发明涉及一种半导体器件的制造方法，该方法包括在基板上形成中间膜的工艺，在中间层中形成开口的工序，填充开口的导电层的形成工序，以及 在导电层的表面上形成盖膜的工艺。 在形成盖膜的工艺中，同时进行导电层表面的还原处理和膜的形成。

公开(公告)号：US20100022048A1

公开(公告)日：2010-01-28

申请号：US12220555

申请日：2008-07-24

申请人： Takaaki Matsuoka ,  Shinji Ide ,  Yoshiyuki Kikuchi

发明人： Takaaki Matsuoka ,  Shinji Ide ,  Yoshiyuki Kikuchi

IPC分类号： H01L51/40 ,  H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/3148

摘要： The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.

摘要翻译： 本发明涉及一种半导体器件的制造方法，该方法包括在基板上形成中间膜的工艺，在中间层中形成开口的工序，填充开口的导电层的形成工序，以及 在导电层的表面上形成盖膜的工艺。 在形成盖膜的工艺中，同时进行导电层表面的还原处理和膜的形成。

公开(公告)号：US09117764B2

公开(公告)日：2015-08-25

申请号：US13819038

申请日：2011-07-29

申请人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

发明人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

IPC分类号： H01L21/302 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20

CPC分类号： H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

摘要翻译： 在作为被处理基板的硅基板上形成氟碳层（步骤A）。 在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。 然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。 使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。 接下来，除去作为掩模的抗蚀剂层（步骤E）。 之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步​​骤F）。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20140080307A1

公开(公告)日：2014-03-20

申请号：US14000643

申请日：2012-02-20

申请人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

发明人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

IPC分类号： H01L21/306 ,  H01L21/308

CPC分类号： H01L21/30604 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0337 ,  H01L21/308 ,  H01L21/31111 ,  H01L21/32139 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719

摘要： A pattern-forming method for forming a predetermined pattern serving as a mask when etching film on a substrate includes the steps of: an organic film pattern-forming step for forming an organic film pattern on a film to be processed; forming a silicon nitride film on the organic film pattern; etching the silicon nitride film so that the silicon nitride film remains only on the lateral wall sections of the organic film pattern; and removing the organic film, thereby forming the predetermined silicon nitride film pattern on the film to be processed on a substrate. With the temperature of the substrate maintained at no more than 100° C., the film-forming step excites a processings gas and generates a plasma, performs plasma processing with the plasma, and forms a silicon nitride film having stress of no more than 100 MPa.

摘要翻译： 当在基板上刻蚀膜时，用于形成用作掩模的预定图案的图案形成方法包括以下步骤：在待处理的膜上形成有机膜图案的有机膜图案形成步骤; 在有机膜图案上形成氮化硅膜; 蚀刻氮化硅膜，使得氮化硅膜仅保留在有机膜图案的侧壁部分上; 除去有机膜，从而在基板上形成预定的氮化硅膜图案。 在基板的温度保持不超过100℃的条件下，成膜步骤激发处理气体并产生等离子体，用等离子体进行等离子体处理，形成压力不超过100的氮化硅膜 MPa。

公开(公告)号：US20130330928A1

公开(公告)日：2013-12-12

申请号：US13978438

申请日：2012-01-05

申请人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

发明人： Hiraku Ishikawa ,  Teruyuki Hayashi ,  Takaaki Matsuoka ,  Yuji Ono

IPC分类号： H01L21/67 ,  H01L21/308

CPC分类号： H01L21/67069 ,  G03F7/16 ,  H01L21/0274 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/6715 ,  H01L21/67207 ,  H01L21/67225

摘要： A substrate processing system of forming a resist pattern having a molecular resist of a low molecular compound on a substrate includes a film forming device configured to form a resist film on the substrate; an exposure device configured to expose the formed resist film; and a developing device configured to develop the exposed resist film. The film forming device includes a processing chamber configured to accommodate therein the substrate; a holding table that is provided in the processing chamber and configured to hold the substrate thereon; a resist film deposition head configured to supply a vapor of the molecular resist to the substrate held on the holding table; and a depressurizing device configured to depressurize an inside of the processing chamber to a vacuum atmosphere.

摘要翻译： 在基板上形成具有低分子化合物的分子抗蚀剂的抗蚀剂图案的基板处理系统包括：在基板上形成抗蚀剂膜的成膜装置; 曝光装置，被配置为暴露所形成的抗蚀剂膜; 以及显影装置，其被配置为显影所述曝光的抗蚀剂膜。 成膜装置包括：处理室，其构造成在其中容纳基板; 保持台，设置在所述处理室中并且被配置为将所述基板保持在其上; 抗蚀剂膜沉积头，被配置为将分子抗蚀剂的蒸气供应到保持在保持台上的基板; 以及减压装置，其构造成将处理室的内部减压至真空气氛。

公开(公告)号：US08383194B2

公开(公告)日：2013-02-26

申请号：US11991475

申请日：2006-09-05

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Shozo Nakayama ,  Hironori Ito

IPC分类号： B05D5/06 ,  B05C9/06

CPC分类号： H01L51/001 ,  C23C14/12 ,  C23C14/243 ,  C23C14/568 ,  H01L51/56

摘要： To provide a film forming apparatus capable of using an expensive organic EL raw material without waste and uniformly forming an organic EL film over a long period of time and a jig therefor.A plurality of ejection vessels are provided for a single raw material container section. A switcher is provided for carrying out switching from a piping system, which evaporates an organic EL raw material in the raw material container section and supplies it along with a carrier gas to one of the ejection vessels, to a piping system for another ejection vessel. In this manner, by supplying the organic EL raw material from the single raw material container section to the plurality of ejection vessels by switching, the use efficiency of the organic EL raw material can be improved.

摘要翻译： 本发明提供能够在不浪费的情况下使用昂贵的有机EL原料并且能够长时间均匀地形成有机EL膜的成膜装置及其夹具。 为单个原料容器部提供多个喷射容器。 提供了一种用于从管道系统进行切换的切换器，其蒸发原料容器部分中的有机EL原料并将其与载气一起供应到其中一个排出容器，用于另一喷射容器的管道系统。 以这种方式，通过将单一原料容器部分的有机EL原料通过切换提供给多个喷射容器，可以提高有机EL原料的使用效率。

公开(公告)号：US20120125376A1

公开(公告)日：2012-05-24

申请号：US13381424

申请日：2010-05-27

申请人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

发明人： Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Takenao Nemoto ,  Yoriyuki Murakawa ,  Kazuhiro Yoshikawa

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  H01L21/6708 ,  H01L21/6838

摘要： A wet processing apparatus holds on a stage a substrate to be processed and carries out a wet treatment by rotating the stage. The substrate is held by the stage, with the center of the substrate being offset from the rotation center of the stage, using a Bernoulli chuck which causes an inert gas to flow to a back surface of the substrate, so that the substrate is eccentrically rotated along with the rotation of the stage. A first gas supply passage which is used for the Bernoulli chuck is provided at a rotation shaft portion in the stage and the stage is also provided with second gas supply passages which communicate with the first gas supply passage to thereby introduce the inert gas to the back surface of the substrate. The second gas supply passages are axisymmetric with respect to a central axis of the substrate.

摘要翻译： 湿式处理装置在待处理的基板的台上保持，并通过旋转台进行湿处理。 基板由载物台保持，其中基板的中心偏离载物台的旋转中心，使用伯努利卡盘，其使惰性气体流到基板的背面，使得基板偏心旋转 以及舞台的旋转。 用于伯努利卡盘的第一气体供给通道设置在舞台的旋转轴部分，舞台还设置有与第一气体供给通道连通的第二气体供给通道，从而将惰性气体引入到背部 基板的表面。 第二气体供给通道相对于基板的中心轴线是对称的。

公开(公告)号：US20110215384A1

公开(公告)日：2011-09-08

申请号：US12673550

申请日：2008-08-14

申请人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

发明人： Tadahiro Ohmi ,  Takaaki Matsuoka ,  Atsutoshi Inokuchi ,  Kohei Watanuki ,  Tadashi Koike ,  Tatsuhiko Adachi

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/02255 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/76807 ,  H01L21/76828 ,  H01L21/76835 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823871 ,  H01L21/823878 ,  H01L23/53295 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/32145 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2924/00

摘要： In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost.As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0≦x≦1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.

摘要翻译： 在包括浅沟槽元件隔离区域和多层结构的层间绝缘膜的半导体器件的制造工艺中，需要重复使用CMP，但是由于CMP本身是昂贵的，所以重复使用CMP是造成 增加制造成本。 作为用于浅沟槽（ST）元件隔离区域和/或最下层层间绝缘膜的绝缘膜，可以使用可通过旋涂进行涂覆的绝缘涂膜。 绝缘涂膜具有由（（CH 3）n SiO 2 -n / 2）x（SiO 2）1-x（其中n = 1至3和0＆nlE; x＆nlE; 1.0）表示的组成，并且具有不同相对介电常数k的膜 通过选择热处理条件形成。 可以通过将绝缘涂膜完全改性为SiO 2膜来形成STI元件隔离区域，而具有小相对介电常数k的层间绝缘膜可以通过将其转换为未完全改性的状态来形成。

公开(公告)号：US20110053375A1

公开(公告)日：2011-03-03

申请号：US12863362

申请日：2009-01-09

申请人： Hiraku Ishikawa ,  Takaaki Matsuoka

发明人： Hiraku Ishikawa ,  Takaaki Matsuoka

IPC分类号： H01L21/3205 ,  C07F7/10 ,  C07F7/18 ,  C01B33/00

CPC分类号： H01L21/3105 ,  C23C16/042 ,  C23C16/24 ,  C23C16/26 ,  H01L21/02063 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3146 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76835

摘要： A method for processing an amorphous carbon film which has been formed on a substrate and wet-cleaned after being dry-etched includes preparing the substrate having the wet-cleaned amorphous carbon film and modifying a surface of the amorphous carbon film, before forming an upper layer on the wet-cleaned amorphous carbon film.

摘要翻译： 用于处理已经形成在基底上并在干蚀刻后进行湿清洗的无定形碳膜的方法包括制备具有湿清洁的无定形碳膜并修饰无定形碳膜的表面的基底，然后形成上层 在湿清洁的无定形碳膜上。