公开(公告)号：US08269301B2

公开(公告)日：2012-09-18

申请号：US12295740

申请日：2007-04-04

申请人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima ,  Hideaki Takemori ,  Masatoshi Seki

发明人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima ,  Hideaki Takemori ,  Masatoshi Seki

IPC分类号： H01L31/0203 ,  H01L27/15

CPC分类号： H01L33/486 ,  H01L25/0753 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

摘要： Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided.A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

摘要翻译： 提供了用于安装具有优异的散热性并且可以分批地以晶片状态形成的光学器件的安装座。 包括光学器件安装部件和布线部件的金属化电极形成在以绝缘材料为主要成分的第一基板的表面上，在作为第二基板的玻璃基板中形成通孔，光学元件安装部 第一基板被排列成位于第二基板的通孔内部，并且第一基板和第二基板通过诸如阳极接合的方法接合在一起。

公开(公告)号：US20090219728A1

公开(公告)日：2009-09-03

申请号：US12295740

申请日：2007-04-04

申请人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima ,  Hideaki Takemori ,  Masatoshi Seki

发明人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima ,  Hideaki Takemori ,  Masatoshi Seki

IPC分类号： F21V19/00 ,  B32B38/10

CPC分类号： H01L33/486 ,  H01L25/0753 ,  H01L33/46 ,  H01L33/62 ,  H01L33/641 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

摘要： Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided.A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

摘要翻译： 提供了用于安装具有优异的散热性并且可以分批地以晶片状态形成的光学器件的安装座。 包括光学器件安装部件和布线部件的金属化电极形成在以绝缘材料为主要成分的第一基板的表面上，在作为第二基板的玻璃基板中形成通孔，光学元件安装部 第一基板被排列成位于第二基板的通孔内部，并且第一基板和第二基板通过诸如阳极接合的方法接合在一起。

公开(公告)号：US07939938B2

公开(公告)日：2011-05-10

申请号：US12028108

申请日：2008-02-08

申请人： Shohei Hata ,  Naoki Matsushima ,  Eiji Sakamoto ,  Ryoji Okada ,  Takanori Aono ,  Atsushi Kazama ,  Toshiki Kida

发明人： Shohei Hata ,  Naoki Matsushima ,  Eiji Sakamoto ,  Ryoji Okada ,  Takanori Aono ,  Atsushi Kazama ,  Toshiki Kida

IPC分类号： H01L23/04

CPC分类号： B81C1/00269 ,  B81C2203/019 ,  H01L2924/0002 ,  H01L2924/00

摘要： A packaging structure for hermetically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.

摘要翻译： 一种封装结构，用于通过在晶片级焊接连接来密封功能器件，其中使用在其内表面上具有金属化的凹部的第一Si衬底和在与所述凹部相对的位置上金属化的第二Si衬底，所述金属化 施加到第一Si衬底的凹部的内表面，并且在与凹部相对的位置处施加到第二Si衬底的金属化通过熔融焊料连接，以将功能器件密封在第一Si衬底和第二Si衬底之间 Si衬底，由此提高了用于两个Si衬底的焊料的润湿性，提高了Si衬底之间的粘合性，并提高了制造封装的成品率。

公开(公告)号：US20080233349A1

公开(公告)日：2008-09-25

申请号：US11924924

申请日：2007-10-26

申请人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima

发明人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima

IPC分类号： B32B3/24

CPC分类号： G01P15/0802 ,  B81B2201/0271 ,  B81C1/00269 ,  G01P1/023 ,  G01P15/0897 ,  H03H9/105 ,  H03H9/1057 ,  H03H9/173 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/2462 ,  Y10T428/24826 ,  Y10T428/265

摘要： The present invention provides a low-cost MEMS functional device by improving air tightness of a jointed section by anode junction in wafer level packaging for MEMS based functional devices. The MEMS functional device comprises a function element section formed by processing a substrate mainly made of Si, a metallized film for sealing formed around the functional element, and a glass substrate jointed to the metallized film for sealing by anode junction. Formed on a surface of the metallized film for sealing is a metallized film containing at least one of Sn and Ti as a main component.

摘要翻译： 本发明通过在基于MEMS的功能器件的晶片级封装中改善阳极结的接合部分的气密性来提供低成本MEMS功能器件。 MEMS功能器件包括通过处理主要由Si制成的衬底，形成在功能元件周围形成的用于密封的金属化膜形成的功能元件部分，以及连接到金属化膜的用于通过阳极接合进行密封的玻璃衬底。 形成在用于密封的金属化膜的表面上是以Sn和Ti中的至少一种为主要成分的金属化膜。

公开(公告)号：US20080217752A1

公开(公告)日：2008-09-11

申请号：US12028108

申请日：2008-02-08

申请人： Shohei Hata ,  Naoki Matsushima ,  Eiji Sakamoto ,  Ryoji Okada ,  Takanori Aono ,  Atsushi Kazama ,  Toshiki Kida

发明人： Shohei Hata ,  Naoki Matsushima ,  Eiji Sakamoto ,  Ryoji Okada ,  Takanori Aono ,  Atsushi Kazama ,  Toshiki Kida

IPC分类号： H01L23/02

CPC分类号： B81C1/00269 ,  B81C2203/019 ,  H01L2924/0002 ,  H01L2924/00

摘要： A packaging structure for hermitically sealing a functional device by solder connection at a wafer level in which a first Si substrate having a concave portion metallized on its internal surface and a second Si substrate metallized at a position opposed to said concave portion are used, the metallization applied to the internal surface of the concave portion of the first Si substrate and the metallization applied to the second Si substrate at the position opposed to the concave portion are connected by molten solder to hermetically seal the functional device between the first Si substrate and the second Si substrate, whereby the wettability of the solder for the two Si substrates is improved, the bondability between the Si substrates is enhanced, and the yield at which the package is manufactured is improved.

摘要翻译： 一种用于通过在晶片级焊接连接来密封功能器件的封装结构，其中使用在其内表面上具有金属化的凹部的第一Si衬底和在与所述凹部相对的位置上金属化的第二Si衬底，所述金属化 施加到第一Si衬底的凹部的内表面，并且在与凹部相对的位置处施加到第二Si衬底的金属化通过熔融焊料连接，以将功能器件密封在第一Si衬底和第二Si衬底之间 Si衬底，由此提高了用于两个Si衬底的焊料的润湿性，提高了Si衬底之间的粘合性，并提高了制造封装的成品率。

公开(公告)号：US08003193B2

公开(公告)日：2011-08-23

申请号：US11924924

申请日：2007-10-26

申请人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima

发明人： Shohei Hata ,  Eiji Sakamoto ,  Naoki Matsushima

IPC分类号： B32B3/24 ,  B32B17/06

CPC分类号： G01P15/0802 ,  B81B2201/0271 ,  B81C1/00269 ,  G01P1/023 ,  G01P15/0897 ,  H03H9/105 ,  H03H9/1057 ,  H03H9/173 ,  Y10T428/24273 ,  Y10T428/24322 ,  Y10T428/2462 ,  Y10T428/24826 ,  Y10T428/265

摘要： The present invention provides a low-cost MEMS functional device by improving air tightness of a jointed section by anode junction in wafer level packaging for MEMS based functional devices. The MEMS functional device comprises a function element section formed by processing a substrate mainly made of Si, a metallized film for sealing formed around the functional element, and a glass substrate jointed to the metallized film for sealing by anode junction. Formed on a surface of the metallized film for sealing is a metallized film containing at least one of Sn and Ti as a main component.

摘要翻译： 本发明通过在基于MEMS的功能器件的晶片级封装中改善阳极结的接合部分的气密性来提供低成本MEMS功能器件。 MEMS功能器件包括通过处理主要由Si制成的衬底，形成在功能元件周围形成的用于密封的金属化膜形成的功能元件部分，以及连接到金属化膜的用于通过阳极接合进行密封的玻璃衬底。 形成在用于密封的金属化膜的表面上是以Sn和Ti中的至少一种为主要成分的金属化膜。

公开(公告)号：US07842889B2

公开(公告)日：2010-11-30

申请号：US12352631

申请日：2009-01-13

申请人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

发明人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

IPC分类号： H01L23/49 ,  H05K5/06

CPC分类号： H01L24/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L23/4985 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/3426 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

摘要翻译： 本发明的特征在于具有基板1和形成在基板1上的金属化层2的结构，在其上形成有Sn焊料膜3和Ag膜4。 Ag膜4是在室温下在大气中不氧化的金属。 在湿法中，由于仅通过Ag和Sn的电池反应使Sn焊料膜3的露出侧被氧化，否则会影响连接的焊料膜上的Ag膜4的上表面不被氧化 。 由于Ag膜4在Sn焊料膜3熔化的同时熔融而成为Sn焊料，所以Ag膜4不妨碍连接。

公开(公告)号：US20090126991A1

公开(公告)日：2009-05-21

申请号：US12352631

申请日：2009-01-13

申请人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

发明人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

IPC分类号： H01L23/495 ,  H05K1/00

CPC分类号： H01L24/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L23/4985 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/3426 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

摘要翻译： 本发明的特征在于具有基板1和形成在基板1上的金属化层2的结构，在其上形成有Sn焊料膜3和Ag膜4。 Ag膜4是在室温下在大气中不氧化的金属。 在湿法中，由于仅通过Ag和Sn的电池反应使Sn焊料膜3的露出侧被氧化，否则会影响连接的焊料膜上的Ag膜4的上表面不被氧化 。 由于Ag膜4在Sn焊料膜3熔化的同时熔融而成为Sn焊料，所以Ag膜4不妨碍连接。

公开(公告)号：US20060237231A1

公开(公告)日：2006-10-26

申请号：US11378450

申请日：2006-03-20

申请人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

发明人： Shohei Hata ,  Naoki Matsushima ,  Takeru Fujinaga

IPC分类号： H01L23/28

CPC分类号： H01L24/10 ,  H01L23/49582 ,  H01L23/49811 ,  H01L23/4985 ,  H01L23/49866 ,  H01L24/13 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H05K3/3426 ,  H05K3/3463 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2224/0555 ,  H01L2224/0556

摘要： The present invention is characterized by a structure having a substrate 1, and metallization layers 2 formed on the substrate 1, on which a Sn solder film 3 and an Ag film 4 are formed. The Ag film 4 is a metal free from oxidization at room temperature in the atmosphere. In a wet process, since only an exposed side of the Sn solder film 3 is oxidized by the cell reaction of Ag and Sn, an upper surface of the Ag film 4 on the solder film, which would otherwise affect the connection, is not oxidized. Since the Ag film 4 melts into the Sn solder simultaneously with melting of the Sn solder film 3, the Ag film 4 does not hinder the connection.

公开(公告)号：US07991251B2

公开(公告)日：2011-08-02

申请号：US12494890

申请日：2009-06-30

申请人： Shohei Hata ,  Naoki Matsushima ,  Toshiaki Takai ,  Yukio Sakigawa ,  Satoshi Arai

发明人： Shohei Hata ,  Naoki Matsushima ,  Toshiaki Takai ,  Yukio Sakigawa ,  Satoshi Arai

IPC分类号： G02B6/28 ,  G02B6/30

CPC分类号： G02B6/29365 ,  G02B6/29367 ,  G02B6/4204 ,  G02B6/4246 ,  Y10T156/1052 ,  Y10T156/1089

摘要： A filter element includes a first glass substrate having a pair of parallel surfaces and a band pass filter arranged on one of the parallel surfaces, a pair of single-crystal substrates (Si wafers) each including a primary surface formed with a depression having an inclined surface with respect to the primary surface occupying at least one half of the opening of the depression, and a second glass substrate having an optical element. The primary surfaces of the single-crystal substrate pair are bonded to a pair of the surfaces of the glass substrate. The depressions are faced through the glass substrate and surround the band pass filter. By this configuration, the filter element can be mass produced with a high accuracy and a low cost by the wafer-level process.

摘要翻译： 过滤元件包括具有一对平行表面的第一玻璃基板和布置在一个平行表面上的带通滤波器，一对单晶基板（Si晶片），每个单晶基板包括形成有具有倾斜的凹陷的主表面 相对于占据凹部的开口的至少一半的主表面的表面，以及具有光学元件的第二玻璃基板。 单晶衬底对的主表面被接合到玻璃衬底的一对表面上。 凹陷面向玻璃基板并围绕带通滤光片。 通过这种构造，可以通过晶片级处理以高精度和低成本大量生产过滤元件。