摘要:
A positive working resist composition comprising (A1) a resin containing a repeating unit represented by formula (1) defined in the specification and a repeating unit represented by formula (2) defined in the specification and having a property of being insoluble or sparingly soluble in an alkali developing solution and becoming soluble in an alkali developing solution by the action of an acid, and (B) a compound capable of generating sulfonic acid upon irradiation with active rays or radiations in an amount of from 5 to 20% by weight based on the total solid content of the positive working resist composition.
摘要:
A positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B′) an onium salt compound which generates an acid when irradiated with active ray or radiation and (C) at least one of fluorine-based and/or silicon-based surface active agent and nonionic surface active agent or a positive-working photoresist composition comprises (A) a resin comprising the specific repeating structural units which resin increases in its solubility in an alkaline developer when acted upon by an acid, (B) a compound which generates an acid when irradiated with active ray or radiation, and (D) a mixed solvent containing at least one propylene glycol monoalkyl ether carboxylate and at least one of solvents selected from the group consisting of propylene glycol monoalkyl ether, alkyl lactate and alkoxyalkyl propionate and solvents selected from the group consisting of &ggr;-butyrolactone, ethylene carbonate and propylene carbonate.
摘要:
A positive resist composition comprising (a) a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution, contains a structural unit having a group represented by formula (X) defined in the specification, has a weight average molecular weight of not more than 5,000, and contains an acid decomposable group in an amount of not more than 40% based on the sum total of a number of the acid decomposable group and a number of an alkali-soluble group not protected with the acid decomposable group, and (b) a compound that generates an acid upon irradiation of an actinic ray or radiation.
摘要:
A negative resist composition of the present invention comprises: (A) an alkali-soluble resin; (B-1) a cross-linking agent capable of cross-linking with the alkali-soluble resin (A) by the action of an acid, in which the cross-linking agent is a phenol compound containing: in the molecule one or more benzene rings; and at least two cross-linking groups bonded to any of the benzene rings, the cross-linking group being a group selected from the group consisting of a hydroxymethyl group, an alkoxymethyl group and an acyloxymethyl group; (B-2) a cross-linking agent capable of cross-linking with the alkali-soluble resin (A) by the action of an acid, in which the cross-linking agent contains at least two specific groups; and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.
摘要:
The resist composition of the present invention, ensuring excellent pattern profile and excellent isolation performance for use in the pattern formation by the irradiation of actinic rays or radiation, particularly, electron beam, X ray or EUV light, which comprising (A) a compound having a specific partial structure and a counter ion, the compound generating an acid upon irradiation of actinic rays or radiation.
摘要:
A positive resist composition comprising: (A) a fluorine group-containing resin having: a structure wherein at least one of the main chain and the side chain of the polymer skeleton has at least one fluorine atom; and having a group capable of decomposing under the action of an acid to increase the solubility in an alkali developer; (B) a compound capable of generating an acid upon irradiation with one of actinic ray and radiation, and (C) a surfactant containing at least one of a silicon atom and a fluorine atom.
摘要:
A positive resist composition of the present invention achieving significant performance improvements in high energy-beam lithography, which comprises a phenolic polymer having a property of being insoluble or hardly soluble in an aqueous alkali solution and becoming soluble in an aqueous alkali solution by the action of an acid, in which the phenolic polymer includes a repeating unit containing at least one selected from the group consisting of an acetal-protected phenolic hydroxyl group, a ketal-protected phenolic hydroxyl group, a tertiary ester-protected carboxyl group and a tetrahydropyranyl-protected carboxyl group; and a compound having a phenacylsulfonium structure and capable of generating an acid upon irradiation with one of actinic rays and radiation.
摘要:
Disclosed is a positive photoresist composition comprising a polysiloxane containing as a copolymerization component at least a structural unit represented by the following formula (I): wherein L represents a single bond or an arylene group, A′ represents an aromacyclic or alicyclic structure which may have a substituent, and n represents an integer of 1 to 6.
摘要:
A positive type photoresist composition comprising an alkali-soluble or acid-decomposable polysiloxane containing repeating structural units represented by formula (I): wherein L represents at least one divalent connecting group selected from the group consisting of —A—NHCO—, —A—NHCOO— and —A—NHCONH—, wherein A represents a single bond, an alkylene group or an arylene group; X represents a single bond or a divalent connecting group; and Z represents either a group represented by or a group represented by wherein Y represents a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, an atomic group represented by Y may be straight-chain, branched or cyclic, R represents a hydrogen atom or an acid-decomposable group, l represents an integer of from 1 to 3, and m also represents an integer of from 1 to 3.
摘要:
A positive resist composition comprising (A) a resin that contains a repeating unit represented by formula (1) defined in the specification and a repeating unit represented by formula (2) defined in the specification, and is insoluble or slightly soluble in an alkali developer and becomes soluble in an alkali developer by an action of an acid, and (B) a compound generating a sulfonic acid compound represented by formula (3) defined in the specification upon irradiation of actinic ray or radiation.