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121 条记录 (耗时 0.022 秒)

    Semiconductor device
    1.
    发明申请
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US20060140004A1

    公开(公告)日：2006-06-29

    申请号：US11360590

    申请日：2006-02-24

    申请人： Shoji Shukuri ,  Kazumasa Yanagisawa

    发明人： Shoji Shukuri ,  Kazumasa Yanagisawa

    IPC分类号： G11C16/04

    CPC分类号： G11C16/26 ,  G11C16/0441 ,  G11C2216/10

    摘要： A semiconductor integrated circuit includes non-volatile memory elements (PM1, PM2), each of which has a first source electrode, a first drain electrode, a floating gate electrode and a control gate electrode and is capable of having different threshold voltages, and read transistor elements (DM1, DM2), each of which has a second source electrode and a second drain electrode and is capable of having different mutual conductances according to the threshold voltage of the non-volatile memory element. The read transistor element has a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to cause a channel current to flow according to the threshold voltage of the non-volatile memory element.

    摘要翻译： 半导体集成电路包括非易失性存储元件（PM 1，PM 2），每一个都具有第一源电极，第一漏电极，浮栅电极和控制栅极，并且能够具有不同的阈值电压， 并读取晶体管元件（DM1，DM2），每个晶体管元件具有第二源极和第二漏极，并且能够根据非易失性存储元件的阈值电压具有不同的互导。 读取晶体管元件具有根据电子注入状态或电子发射状态的切换状态，换句话说，浮置栅电极的写入状态或擦除状态。 在读取操作中，不需要根据非易失性存储元件的阈值电压使通道电流流动。

    Semiconductor device
    2.
    发明授权
    Semiconductor device 失效

    公开(公告)号：US06791881B2

    公开(公告)日：2004-09-14

    申请号：US10627821

    申请日：2003-07-28

    申请人： Shoji Shukuri ,  Kazumasa Yanagisawa

    发明人： Shoji Shukuri ,  Kazumasa Yanagisawa

    IPC分类号： H01L2710

    CPC分类号： G11C16/26 ,  G11C16/0441 ,  G11C2216/10

    摘要： A semiconductor integrated circuit includes non-volatile memory elements (PM1, PM2), each of which has a first source electrode, a first drain electrode, a floating gate electrode and a control gate electrode and is capable of having different threshold voltages, and read transistor elements (DM1, DM2), each of which has a second source electrode and a second drain electrode and is capable of having different mutual conductances according to the threshold voltage of the non-volatile memory element. The read transistor element has a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to cause a channel current to flow according to the threshold voltage of the non-volatile memory element.

    Semiconductor device
    3.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07405971B2

    公开(公告)日：2008-07-29

    申请号：US11360590

    申请日：2006-02-24

    申请人： Shoji Shukuri ,  Kazumasa Yanagisawa

    发明人： Shoji Shukuri ,  Kazumasa Yanagisawa

    IPC分类号： G11C11/34

    CPC分类号： G11C16/26 ,  G11C16/0441 ,  G11C2216/10

    摘要： A semiconductor integrated circuit includes non-volatile memory elements (PM1, PM2), each of which has a first source electrode, a first drain electrode, a floating gate electrode and a control gate electrode and is capable of having different threshold voltages, and read transistor elements (DM1, DM2), each of which has a second source electrode and a second drain electrode and is capable of having different mutual conductances according to the threshold voltage of the non-volatile memory element. The read transistor element has a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to cause a channel current to flow according to the threshold voltage of the non-volatile memory element.

    摘要翻译： 半导体集成电路包括非易失性存储元件（PM 1，PM 2），每一个都具有第一源电极，第一漏电极，浮栅电极和控制栅极，并且能够具有不同的阈值电压， 并读取晶体管元件（DM1，DM2），每个晶体管元件具有第二源极和第二漏极，并且能够根据非易失性存储元件的阈值电压具有不同的互导。 读取晶体管元件具有根据电子注入状态或电子发射状态的切换状态，换句话说，浮置栅电极的写入状态或擦除状态。 在读取操作中，不需要根据非易失性存储元件的阈值电压使通道电流流动。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 失效

    公开(公告)号：US06628549B2

    公开(公告)日：2003-09-30

    申请号：US10230314

    申请日：2002-08-29

    申请人： Shoji Shukuri ,  Kazumasa Yanagisawa

    发明人： Shoji Shukuri ,  Kazumasa Yanagisawa

    IPC分类号： G11C700

    CPC分类号： G11C16/26 ,  G11C16/0441 ,  G11C2216/10

    摘要： A semiconductor integrated circuit includes non-volatile memory elements (PM1, PM2), each of which has a first source electrode, a first drain electrode, a floating gate electrode and a control gate electrode and is capable of having different threshold voltages, and read transistor elements (DM1, DM2), each of which has a second source electrode and a second drain electrode and is capable of having different mutual conductances according to the threshold voltage of the non-volatile memory element. The read transistor element has a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to cause a channel current to flow according to the threshold voltage of the non-volatile memory element.

    Semiconductor device
    7.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US06466482B2

    公开(公告)日：2002-10-15

    申请号：US09801769

    申请日：2001-03-09

    申请人： Shoji Shukuri ,  Kazumasa Yanagisawa

    发明人： Shoji Shukuri ,  Kazumasa Yanagisawa

    IPC分类号： G11C700

    CPC分类号： G11C16/26 ,  G11C16/0441 ,  G11C2216/10

    摘要： A semiconductor integrated circuit includes non-volatile memory elements (PM1, PM2), each of which has a first source electrode, a first drain electrode, a floating gate electrode and a control gate electrode and is capable of having different threshold voltages, and read transistor elements (DM1, DM2), each of which has a second source electrode and a second drain electrode and is capable of having different mutual conductances according to the threshold voltage of the non-volatile memory element. The read transistor element has a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to cause a channel current to flow according to the threshold voltage of the non-volatile memory element.

    摘要翻译： 半导体集成电路包括非易失性存储元件（PM1，PM2），其中每一个具有第一源电极，第一漏电极，浮栅电极和控制栅电极，并且能够具有不同的阈值电压，并读取 晶体管元件（DM1，DM2），每个晶体管元件具有第二源极和第二漏极，并且能够根据非易失性存储元件的阈值电压具有不同的互导。 读取晶体管元件具有根据电子注入状态或电子发射状态的切换状态，换句话说，浮置栅电极的写入状态或擦除状态。 在读取操作中，不需要根据非易失性存储元件的阈值电压使通道电流流动。

    Semiconductor integrated circuit device
    10.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号：US08829968B2

    公开(公告)日：2014-09-09

    申请号：US12555143

    申请日：2009-09-08

    申请人： Hiroyuki Mizuno ,  Yusuke Kanno ,  Kazumasa Yanagisawa ,  Yoshihiko Yasu ,  Nobuhiro Oodaira

    发明人： Hiroyuki Mizuno ,  Yusuke Kanno ,  Kazumasa Yanagisawa ,  Yoshihiko Yasu ,  Nobuhiro Oodaira

    IPC分类号： H03L5/00

    CPC分类号： H03K19/0016 ,  H01L23/5286 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0928 ,  H01L27/11898 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A semiconductor integrated circuit device provided with a first circuit block BLK1, a second circuit block DRV1 and a conversion circuit MIO1 for connecting the first circuit block to the second circuit block. The first circuit block includes a first mode for applying a supply voltage and a second mode for shutting off the supply voltage. The conversion circuit is provided with a function for maintaining the potential of an input node of the second circuit block at an operation potential, thereby suppressing a penetrating current flow when the first circuit block is in the second mode. The conversion circuit (MIO1 to MIO4) are commonly used for connecting circuit blocks.

    摘要翻译： 具有第一电路块BLK1，第二电路块DRV1和用于将第一电路块连接到第二电路块的转换电路MIO1的半导体集成电路器件。 第一电路块包括用于施加电源电压的第一模式和用于关断电源电压的第二模式。 转换电路具有将第二电路块的输入节点的电位维持在操作电位的功能，从而当第一电路块处于第二模式时抑制穿透电流流动。 转换电路（MIO1〜MIO4）通常用于连接电路块。