公开(公告)号：US06568580B2

公开(公告)日：2003-05-27

申请号：US09911802

申请日：2001-07-25

申请人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Shinji Kanayama ,  Nobuhisa Watanabe

发明人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Shinji Kanayama ,  Nobuhisa Watanabe

IPC分类号： B23K3704

CPC分类号： H01L24/78 ,  H01L21/67138 ,  H01L21/681 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/14 ,  Y10T29/53178 ,  H01L2224/13099 ,  H01L2224/48 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Wafers are previously positioned so that the wafer orientation flat is oriented in a particular direction. A transporting means then moves and places the previously positioned wafer on a bonding stage where bumps are formed on the wafer by means of a bonding head. The transporting means has a sensor for detecting the position of the orientation flat of a wafer on the bonding stage from a position above the bonding stage, thereby avoiding the adverse effects of heat from the bonding stage during orientation flat detection.

公开(公告)号：US06329640B1

公开(公告)日：2001-12-11

申请号：US09690746

申请日：2000-10-18

申请人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Nobuhisa Watanabe ,  Shinji Kanayama

发明人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Nobuhisa Watanabe ,  Shinji Kanayama

IPC分类号： F27B514

CPC分类号： H01L21/67103 ,  H01L21/68

摘要： An object of the present invention is to provide a bump-bonding heating apparatus, a bump bonding method and a bump forming apparatus which do not involve large-sized apparatus configuration and which are easy to handle, and a semiconductor wafer in which bumps are formed by using the bump bonding method. The bump-bonding heating apparatus has a wafer turning member, a turning unit and a wafer heating unit. The turning member is turned by the turning unit without turning the wafer heating unit, whereby a semiconductor wafer mounted on the turning member is turned. Like this, since the wafer heating unit is not turned, the apparatus configuration can be made compact. Since the turning member is turned directly by the turning unit, the turning angle of the semiconductor wafer can be implemented with higher precision as compared with the conventional gas floating type turning method.

摘要翻译： 本发明的目的是提供一种不涉及大型装置结构并易于处理的凸块焊接加热装置，凸块接合方法和凸块形成装置以及形成凸块的半导体晶片 通过使用凸块接合方法。 凸点焊接加热装置具有晶片转动部件，转动部件和晶片加热部件。 转动构件在不转动晶片加热单元的情况下由转动单元转动，从而转动安装在转动构件上的半导体晶片。 像这样，由于晶片加热单元没有转动，所以可以使装置结构紧凑。 由于转动构件直接由转动单元转动，与常规气浮式转动方法相比，可以以更高的精度实现半导体晶片的转动角度。

公开(公告)号：US06392202B2

公开(公告)日：2002-05-21

申请号：US09955110

申请日：2001-09-19

申请人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Nobuhisa Watanabe ,  Shinji Kanayama

发明人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Nobuhisa Watanabe ,  Shinji Kanayama

IPC分类号： F27B506

CPC分类号： H01L21/67103 ,  H01L21/68

摘要： An object of the present invention is to provide a bump-bonding heating apparatus, a bump bonding method and a bump forming apparatus which do not involve large-sized apparatus configuration and which are easy to handle, and a semiconductor wafer in which bumps are formed by using the bump bonding method. The bump-bonding heating apparatus has a wafer turning member, a turning unit and a wafer heating unit. The turning member is turned by the turning unit without turning the wafer heating unit, whereby a semiconductor wafer mounted on the turning member is turned. Like this, since the wafer heating unit is not turned, the apparatus configuration can be made compact. Since the turning member is turned directly by the turning unit, the turning angle of the semiconductor wafer can be implemented with higher precision as compared with the conventional gas floating type turning method.

公开(公告)号：US06494358B2

公开(公告)日：2002-12-17

申请号：US09911801

申请日：2001-07-25

申请人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Shinji Kanayama ,  Nobuhisa Watanabe

发明人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Shinji Kanayama ,  Nobuhisa Watanabe

IPC分类号： B23Q1514

CPC分类号： H01L24/78 ,  H01L21/67138 ,  H01L21/681 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/14 ,  Y10T29/53178 ,  H01L2224/13099 ,  H01L2224/48 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Wafers are previously positioned so that the wafer orientation flat is oriented in a particular direction. A transporting means then moves and places the previously positioned wafer on a bonding stage where bumps are formed on the wafer by means of a bonding head. The transporting means has a sensor for detecting the position of the orientation flat of a wafer on the bonding stage from a position above the bonding stage, thereby avoiding the adverse effects of heat from the bonding stage during orientation flat detection.

摘要翻译： 预先定位晶片，使得晶片取向平面朝向特定的方向。 然后，传送装置移动并将先前定位的晶片放置在通过结合头在晶片上形成凸起的接合台上。 传送装置具有用于从接合台上方的位置检测接合台上的晶片的取向平面的位置的传感器，从而避免在定向平面检测期间来自接合台的热的不利影响。

公开(公告)号：US06302317B1

公开(公告)日：2001-10-16

申请号：US09335779

申请日：1999-06-18

申请人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Shinji Kanayama ,  Nobuhisa Watanabe

发明人： Shoriki Narita ,  Makoto Imanishi ,  Takaharu Mae ,  Shinji Kanayama ,  Nobuhisa Watanabe

IPC分类号： B23K3512

CPC分类号： H01L24/78 ,  H01L21/67138 ,  H01L21/681 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/786 ,  H01L2224/85045 ,  H01L2224/851 ,  H01L2224/85205 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/14 ,  Y10T29/53178 ,  H01L2224/13099 ,  H01L2224/48 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Wafers are previously positioned so that the wafer orientation flat is oriented in a particular direction. A transporting means then moves and places the previously positioned wafer on a bonding stage where bumps are formed on the wafer by means of a bonding head. The transporting means has a sensor for detecting the position of the orientation flat of a wafer on the bonding stage from a position above the bonding stage, thereby avoiding the adverse effects of heat from the bonding stage during orientation flat detection.

摘要翻译： 预先定位晶片，使得晶片取向平面朝向特定的方向。 然后，传送装置移动并将先前定位的晶片放置在通过结合头在晶片上形成凸起的接合台上。 传送装置具有用于从接合台上方的位置检测接合台上的晶片的取向平面的位置的传感器，从而避免在定向平面检测期间来自接合台的热的不利影响。

公开(公告)号：US20080179378A1

公开(公告)日：2008-07-31

申请号：US11980565

申请日：2007-10-31

申请人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

发明人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

IPC分类号： B23K37/00

CPC分类号： H01L21/67288 ,  H01L21/67144 ,  H01L21/67248 ,  H01L2924/0002 ,  H01L2924/00

摘要： A bump forming apparatus which carries out a temperature control of a type different from the conventional art in forming bumps to a semiconductor wafer, and a bump formation method executed by the bump forming apparatus are provided. A bonding stage, a load and transfer device and a control device are provided. A wafer, after having bumps formed thereon, is held by the load and transfer device and arranged above the bonding stage through control by the control device, so that a temperature drop of the wafer is controlled. Accordingly, generation of troubles such as a crack because of thermal stress and the like can be prevented to even compound semiconductor wafers sensitive to a temperature change.

公开(公告)号：US06910613B2

公开(公告)日：2005-06-28

申请号：US10332026

申请日：2001-06-29

申请人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

发明人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

IPC分类号： H05K3/34 ,  B23K20/00 ,  H01L21/00 ,  H01L21/60 ,  B23K37/00 ,  H01L21/44

CPC分类号： H01L24/742 ,  H01L21/67138 ,  H01L21/67144 ,  H01L21/67248 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/351 ,  Y10T29/4921 ,  H01L2924/00 ,  H01L2924/00014

摘要： A preheat device (160) is provided to execute, before forming bumps (16) to electrode parts (15), a pre-formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317).

摘要翻译： 提供预热装置（160），用于在形成凸起（16）到电极部件（15）之前执行用于粘合促进的预制温度控制，以促进在凸块形成期间电极部分和凸块之间的结合。 电极部分的金属颗粒可以在凸点形成之前变成适当的状态。 与现有技术相比，现在可以改善电极部分和凸块之间的结合状态。 在本发明的另一方面中，通过控制器（317）的加热来控制加热，可以通过接合台（316）在接合强度改善条件下加热具有凸块的半导体部件。

公开(公告)号：US20050191838A1

公开(公告)日：2005-09-01

申请号：US11114084

申请日：2005-04-26

申请人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

发明人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

IPC分类号： H05K3/34 ,  B23K20/00 ,  H01L21/00 ,  H01L21/60 ,  H01L21/44

CPC分类号： H01L24/742 ,  H01L21/67138 ,  H01L21/67144 ,  H01L21/67248 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/351 ,  Y10T29/4921 ,  H01L2924/00 ,  H01L2924/00014

摘要： A preheat device (160) is provided to execute, before forming bumps (16) to electrode parts (15), a pre-formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317).

摘要翻译： 提供预热装置（160），用于在形成凸起（16）到电极部件（15）之前执行用于粘接促进的预制温度控制，以促进在凸起形成期间电极部件和凸块之间的接合。 电极部分的金属颗粒可以在凸点形成之前变成适当的状态。 与现有技术相比，现在可以改善电极部分和凸块之间的结合状态。 在本发明的另一方面中，通过控制器（317）的加热来控制加热，可以通过接合台（316）在接合强度改善条件下加热具有凸块的半导体部件。

公开(公告)号：US06787391B1

公开(公告)日：2004-09-07

申请号：US09719768

申请日：2000-12-18

申请人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

发明人： Makoto Imanishi ,  Shoriki Narita ,  Masahiko Ikeya ,  Shinji Kanayama ,  Takaharu Mae

IPC分类号： H01L2148

CPC分类号： H01L21/67288 ,  H01L21/67144 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T29/41 ,  H01L2924/00

摘要： A bump forming apparatus which carries out a temperature control of a type different from the conventional art in forming bumps to a semiconductor wafer, and a bump formation method executed by the bump forming apparatus are provided. A bonding stage, a load and transfer device and a control device are provided. A wafer, after having bumps formed thereon, is held by the load and transfer device and arranged above the bonding stage through control by the control device, so that a temperature drop of the wafer is controlled. Accordingly, generation of troubles such as a crack because of thermal stress and the like can be prevented to even compound semiconductor wafers sensitive to a temperature change.

摘要翻译： 提供了一种在与半导体晶片形成凸块时进行与传统技术不同的类型的温度控制的凸块形成装置以及由凸块形成装置执行的凸块形成方法。 提供接合台，负载和传送装置以及控制装置。 在其上形成有凸块之后，晶片由负载和转移装置保持，并且通过控制装置的控制而布置在接合台上方，从而控制晶片的温度降。 因此，可以防止由于热应力等而产生诸如裂纹的故障甚至使对温度变化敏感的半导体晶片复合。

公开(公告)号：US07350684B2

公开(公告)日：2008-04-01

申请号：US11114084

申请日：2005-04-26

申请人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

发明人： Shoriki Narita ,  Koichi Yoshida ,  Masahiko Ikeya ,  Takaharu Mae ,  Shinji Kanayama ,  Makoto Imanishi ,  Kazushi Higashi ,  Kenji Fukumoto ,  Hiroshi Wada

IPC分类号： B23K37/00

CPC分类号： H01L24/742 ,  H01L21/67138 ,  H01L21/67144 ,  H01L21/67248 ,  H01L24/11 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10329 ,  H01L2924/351 ,  Y10T29/4921 ,  H01L2924/00 ,  H01L2924/00014

摘要： A preheat device (160) is provided to execute, before forming bumps (16) to electrode parts (15), a pre-formation temperature control for bonding promotion to promote bonding between the electrode parts and the bumps during bump formation. Metal particles of the electrode parts can be changed to an appropriate state before the bump formation. Phenomenally, a bonding state between the electrode parts and the bumps can be improved as compared with the conventional art. In a further arrangement of the present invention, semiconductor components with bumps can be heated under a bonding strength improvement condition by a bonding stage (316) through controlling the heating by a controller (317).

摘要翻译： 提供预热装置（160），用于在形成凸起（16）到电极部件（15）之前执行用于粘接促进的预制温度控制，以促进在凸块形成期间电极部件和凸块之间的接合。 电极部分的金属颗粒可以在凸点形成之前变成适当的状态。 与现有技术相比，现在可以改善电极部分和凸块之间的结合状态。 在本发明的另一方面中，通过控制器（317）的加热来控制加热，可以通过接合台（316）在接合强度改善条件下加热具有凸块的半导体部件。