公开(公告)号：US20050054855A1

公开(公告)日：2005-03-10

申请号：US10940652

申请日：2004-09-15

申请人： Shuichi Ueno ,  Takuji Shitara ,  Kenichi Nakamura ,  Fumisada Kosuge

发明人： Shuichi Ueno ,  Takuji Shitara ,  Kenichi Nakamura ,  Fumisada Kosuge

IPC分类号： B01J8/00 ,  B01J8/18 ,  C07C253/28 ,  C07C255/51 ,  F28D13/00 ,  C07C253/24 ,  C07D213/84

CPC分类号： F28D13/00 ,  B01J8/0055 ,  B01J8/1836 ,  B01J2208/00132 ,  B01J2208/00725 ,  C07C253/28 ,  C07C255/51

摘要： A reactor for producing a nitrile compound from a carbon ring or heterocyclic compound having organic substituents by a gas phase reaction using a fluidized catalyst bed with ammonia and a gas containing oxygen. In a cylindrical fluidized catalyst bed having a diameter of 2.0 meters or greater, partial vaporization-type cooling tubes (the cooling medium is partially vaporized in the tubes) and complete vaporization-type cooling tubes (the cooling medium is completely vaporized in the cooling tubes) are disposed in a specific arrangement. Water containing ionic SiO2 in 0.1 ppm or smaller and having an electric conductivity of 5 μS/cm or smaller is used as the cooling medium for the complete vaporization-type cooling tubes. The temperature of the reaction is easily stabilized and uniform distribution of temperature is obtained in the fluidized catalyst bed. Stable continuous operation is achieved for a long time in a commercial scale apparatus.

摘要翻译： 一种反应器，其由具有有机取代基的碳环或杂环化合物通过气相反应使用流化催化剂床与氨和含氧气体制备。 在直径为2.0米或更大的圆柱形流化催化剂床中，部分气化型冷却管（冷却介质在管中部分蒸发）和完全蒸发式冷却管（冷却介质在冷却管中完全汽化 ）以特定的布置处理。 使用0.1ppm以下的导电率为5μS/ cm以下的离子性SiO 2的水作为完全蒸发式冷却管的冷却介质。 反应的温度容易稳定，在流化催化剂床中得到均匀的温度分布。 在商业规模的设备中长期实现稳定的连续操作。

公开(公告)号：US07371882B2

公开(公告)日：2008-05-13

申请号：US10940652

申请日：2004-09-15

申请人： Shuichi Ueno ,  Takuji Shitara ,  Kenichi Nakamura ,  Fumisada Kosuge

发明人： Shuichi Ueno ,  Takuji Shitara ,  Kenichi Nakamura ,  Fumisada Kosuge

IPC分类号： C07C253/18

CPC分类号： F28D13/00 ,  B01J8/0055 ,  B01J8/1836 ,  B01J2208/00132 ,  B01J2208/00725 ,  C07C253/28 ,  C07C255/51

摘要： A reactor for producing a nitrile compound from a carbon ring or heterocyclic compound having organic substituents by a gas phase reaction using a fluidized catalyst bed with ammonia and a gas containing oxygen. In a cylindrical fluidized catalyst bed having a diameter of 2.0 meters or greater, partial vaporization-type cooling tubes (the cooling medium is partially vaporized in the tubes) and complete vaporization-type cooling tubes (the cooling medium is completely vaporized in the cooling tubes) are disposed in a specific arrangement. Water containing ionic SiO2 in 0.1 ppm or smaller and having an electric conductivity of 5 μS/cm or smaller is used as the cooling medium for the complete vaporization-type cooling tubes. The temperature of the reaction is easily stabilized and uniform distribution of temperature is obtained in the fluidized catalyst bed. Stable continuous operation is achieved for a long time in a commercial scale apparatus.

摘要翻译： 一种反应器，其由具有有机取代基的碳环或杂环化合物通过气相反应使用流化催化剂床与氨和含氧气体制备。 在直径为2.0米或更大的圆柱形流化催化剂床中，部分气化型冷却管（冷却介质在管中部分蒸发）和完全蒸发式冷却管（冷却介质在冷却管中完全汽化 ）以特定的布置处理。 使用0.1ppm以下的电导率为5μS/ cm以下的含有离子性SiO 2的水作为完全蒸发式冷却管的冷却介质。 反应的温度容易稳定，在流化催化剂床中得到均匀的温度分布。 在商业规模的设备中长期实现稳定的连续操作。

公开(公告)号：US08546151B2

公开(公告)日：2013-10-01

申请号：US12528854

申请日：2008-02-25

申请人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

发明人： Haruo Furuta ,  Shuichi Ueno ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Takeharu Kuroiwa ,  Lien-Chang Wang ,  Eugene Chen ,  Yiming Huai

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y10/00 ,  H01L27/228

摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.

摘要翻译： 公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤， 布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属 剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。 还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为 为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

公开(公告)号：US08258592B2

公开(公告)日：2012-09-04

申请号：US12463865

申请日：2009-05-11

申请人： Ryoji Matsuda ,  Shuichi Ueno ,  Haruo Furuta ,  Takashi Takenaga ,  Takeharu Kuroiwa

发明人： Ryoji Matsuda ,  Shuichi Ueno ,  Haruo Furuta ,  Takashi Takenaga ,  Takeharu Kuroiwa

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L43/08 ,  H01L27/228 ,  H01L43/12

摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.

摘要翻译： 提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。 下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。 隧道绝缘膜包含氧化铝（AlOx）作为构成材料。 在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。 硬掩模的膜厚大于CAP层的膜厚。

公开(公告)号：US08013407B2

公开(公告)日：2011-09-06

申请号：US12399760

申请日：2009-03-06

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

摘要翻译： 提供了一种在写特性上稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

公开(公告)号：US20100193831A1

公开(公告)日：2010-08-05

申请号：US12678166

申请日：2008-09-22

申请人： Takashi Sato ,  Shuichi Ueno ,  Takeshi Koyama

发明人： Takashi Sato ,  Shuichi Ueno ,  Takeshi Koyama

IPC分类号： H01L23/29 ,  C08L63/00 ,  C08K5/13

CPC分类号： C08G59/24 ,  C08G59/226 ,  C08G59/42 ,  C08L63/00 ,  H01L33/56 ,  H01L51/5237 ,  H01L51/5246 ,  C08L2666/22

摘要： Provided are an epoxy resin composition including acid anhydrides (A) and epoxy resins (B), in which: (a) cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride accounts for 50 to 90 mass % of the acid anhydrides (A); (b) an alicyclic epoxy resin compound accounts for 30 to 90 mass % of the epoxy resins (B) and an epoxy resin compound represented by the following general formula (1) accounts for 10 to 50 mass % of the epoxy resins (B); and (c) contents of the acid anhydrides (A) and the epoxy resins (B) are such that a blending equivalent ratio between the acid anhydrides and the epoxy resins ranges from 0.4 to 0.7, a cured product of the composition, and a light-emitting diode. The epoxy resin composition has the following characteristics. That is, (1) the composition has a low viscosity after the mixing, a low degree of viscosity increase in standing at room temperature, and excellent workability, (2) the composition has satisfactory curability even when no curing accelerator is added, and (3) a cured product is colorless and transparent, has crack resistance, and changes its color to a small extent with long-term light irradiation and heating. The composition is suitable for an encapsulant for a photoelectric conversion element such as a blue LED or white LED. (In the formula, R's each independently represent a hydrogen atom or a methyl group, m represents an integer of 1 to 3, and n represents an integer of 2 to 8.)

摘要翻译： 提供一种包含酸酐（A）和环氧树脂（B））的环氧树脂组合物，其中：（a）环己烷-1,2,4-三羧酸-1,2-酐占50〜90质量％ 酸酐（A）; （b）环氧树脂（B）的脂环族环氧树脂化合物占30〜90质量％，由通式（1）表示的环氧树脂化合物占环氧树脂（B）的10〜50质量％ ; 和（c）酸酐（A）和环氧树脂（B）的含量使得酸酐与环氧树脂的混合当量比为0.4〜0.7，组合物的固化物和光 发光二极管。 环氧树脂组合物具有以下特征。 也就是说，（1）组合物在混合后具有低粘度，在室温下的静置粘度增加低，加工性优异，（2）即使不加入固化促进剂，组合物也具有令人满意的固化性，（ 3）固化产物无色透明，具有抗裂性，并在长时间的光照射和加热下颜色变化很小。 该组合物适用于诸如蓝色LED或白色LED的光电转换元件的密封剂。 （式中，R 3各自独立地表示氢原子或甲基，m表示1〜3的整数，n表示2〜8的整数。）

公开(公告)号：US20090250776A1

公开(公告)日：2009-10-08

申请号：US12399760

申请日：2009-03-06

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

公开(公告)号：US20090237989A1

公开(公告)日：2009-09-24

申请号：US12476536

申请日：2009-06-02

申请人： Yoshinori OKUMURA ,  Shuichi Ueno ,  Haruo Furuta

发明人： Yoshinori OKUMURA ,  Shuichi Ueno ,  Haruo Furuta

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (1/3)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.

摘要翻译： 位线的宽度和厚度分别表示为W1和T1，数字线的厚度表示为T2，从数字线的中心到厚度方向的中心到自由层的中心的距离 的厚度方向上的MTJ元件表示为L1。 数字线的宽度表示为W2，从厚度方向的位线的中心到厚度方向的MTJ元件的自由层的中心的距离表示为L2。 距离L1和L2以及横截面积S1和S2以如下方式设定：当L1 / L2> = 1时，（1/3）（L1 / L2）<= S2 / S1 <= 1，并且当L1 / L2 <= 1时，满足1 <= S2 / S1 <= 3（L1 / L2）的关系。

公开(公告)号：US20080266939A1

公开(公告)日：2008-10-30

申请号：US12213505

申请日：2008-06-20

申请人： Yoshinori Okumura ,  Shuichi Ueno ,  Haruo Furuta

发明人： Yoshinori Okumura ,  Shuichi Ueno ,  Haruo Furuta

IPC分类号： G11C11/02

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.

摘要翻译： 位线的宽度和厚度分别表示为W 1和T 1，数字线的厚度表示为T 2，并且从数字线的中心到厚度方向的中心的距离 在厚度方向上的MTJ元件的自由层表示为L 1。 数字线的宽度表示为W 2，并且从厚度方向的位线的中心到厚度方向上的MTJ元件的自由层的中心的距离表示为L 2。 距离L 1和L 2以及横截面积S 1和S 2被设定为当L 1 / L 2> = 1时，关于（1/3）（L 1 / L 2 ）满足<= S 2 / S 1 <= 1，并且当L 1 / L 2 <= 1时，满足1 <= S 2 / S 1 <= 3（L 1 / L 2）的关系。

公开(公告)号：US20080168649A1

公开(公告)日：2008-07-17

申请号：US12076151

申请日：2008-03-14

申请人： Shinroku Maejima ,  Shuichi Ueno ,  Takashi Takenaga ,  Takeharu Kuroiwa

发明人： Shinroku Maejima ,  Shuichi Ueno ,  Takashi Takenaga ,  Takeharu Kuroiwa

IPC分类号： G11B5/127

CPC分类号： H01L43/12 ,  G11C11/16 ,  H01L27/228 ,  Y10T29/49041 ,  Y10T29/49048

摘要： A photolithographic process using an X-direction delimiting mask (S11) for aligning respective side faces of a TMR element (1) and a strap (5) situated in a negative X side is performed, to shape the TMR element (1) and the strap (5) into desired configurations. The X-direction delimiting mask (S11) includes a straight edge and is disposed such that the straight edge is parallel to a Y direction and crosses both the TMR element (1) and the strap (5) in plan view. In use of the X-direction delimiting mask (S11), respective portions of the TMR element (1) and the strap (5) situated in a positive X side relative to the straight edge in plan view are covered with the X-direction delimiting mask (S11).

摘要翻译： 执行使用用于对准位于负X侧的TMR元件（1）和带（5）的各个侧面的X方向限制掩模（S11）的光刻工艺，以使TMR元件（1）和 带（5）成为所需的配置。 X方向限制掩模（S11）包括直边并且被设置为使得直边平行于Y方向，并且在平面图中与TMR元件（1）和带（5）交叉。 在使用X方向限制掩模（S11）时，在平面图中相对于直边缘位于正X侧的TMR元件（1）和带子（5）的各个部分被X方向 限定掩模（S11）。