公开(公告)号：US20120138922A1

公开(公告)日：2012-06-07

申请号：US13307398

申请日：2011-11-30

申请人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

发明人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC分类号： H01L29/12

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.

摘要翻译： 提供了具有更稳定的导电性的氧化物半导体膜。 此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。 氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。 通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

公开(公告)号：US20110220011A1

公开(公告)日：2011-09-15

申请号：US13042691

申请日：2011-03-08

申请人： Akiharu MIYANAGA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Akiharu MIYANAGA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： C30B1/02

CPC分类号： C30B1/04 ,  C30B29/16

摘要： A method of growing a single crystal of gallium oxide at a lower temperature than the melting point (1900° C.) of gallium oxide is provided. A compound film (hereinafter referred to as “gallium oxide compound film”) containing Ga atoms, O atoms, and atoms or molecules that easily sublimate, is heated to sublimate the atoms or molecules that easily sublimate from inside the gallium oxide compound film, thereby growing a single crystal of gallium oxide with a heat energy that is lower than a binding energy of gallium oxide.

摘要翻译： 提供了在比氧化镓的熔点（1900℃）低的温度下生长氧化镓单晶的方法。 含有Ga原子，O原子，容易升华的原子或分子的化合物膜（以下称为“氧化镓化合物膜”）被加热，使从氧化镓化合物膜内部容易升华的原子或分子升华，由此 以比氧化镓的结合能低的热能生长单晶的氧化镓。

公开(公告)号：US20120241734A1

公开(公告)日：2012-09-27

申请号：US13420987

申请日：2012-03-15

申请人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/44 ,  H01L21/47573 ,  H01L21/477 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

摘要： An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.

摘要翻译： 目的是通过使用具有稳定电特性的氧化物半导体膜来提供具有稳定电特性的高度可靠的半导体器件。 另一个目的是通过使用具有高结晶度的氧化物半导体膜来提供具有较高迁移率的半导体器件。 结晶氧化物半导体膜形成在表面粗糙度减小的绝缘膜上并与其接触，由此氧化物半导体膜可以具有稳定的电特性。 因此，可以提供具有稳定电特性的高度可靠的半导体器件。 此外，可以提供具有较高移动性的半导体器件。

公开(公告)号：US20110217815A1

公开(公告)日：2011-09-08

申请号：US13034725

申请日：2011-02-25

申请人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

发明人： Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/02631 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02667 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.

摘要翻译： 目的在于提供具有高结晶度的氧化物半导体膜的制造方法。 另一个目的是提供具有高场效应迁移率的晶体管的制造方法。 在氧化物半导体膜的制造方法中，在不含氧的气氛中的基板上形成氧化物半导体膜，然后通过在含氧气氛中的热处理使氧化物半导体膜结晶化。

公开(公告)号：US20090181518A1

公开(公告)日：2009-07-16

申请号：US12350984

申请日：2009-01-09

申请人： Takatsugu OMATA ,  Tomoaki MORIWAKA ,  Hideto OHNUMA

发明人： Takatsugu OMATA ,  Tomoaki MORIWAKA ,  Hideto OHNUMA

IPC分类号： H01L21/02 ,  B32B38/18 ,  B32B37/00 ,  B32B38/16 ,  B32B38/00

CPC分类号： H01L21/187 ,  H01L21/76254 ,  Y10T156/17

摘要： It is an object to provide a homogeneous semiconductor substrate in which defective bonding is reduced. Such a semiconductor substrate can be formed by the steps of: disposing a first substrate in a substrate bonding chamber which includes a substrate supporting base where a plurality of openings is provided, substrate supporting mechanisms provided in the plurality of openings, and raising and lowering mechanisms which raise and lower the substrate supporting mechanisms; disposing a second substrate over the first substrate so as not to be in contact with the first substrate; and bonding the first substrate to the second substrate by using the raising and lowering mechanisms to raise the substrate supporting mechanisms.

摘要翻译： 本发明的目的是提供一种均匀的半导体衬底，其中不良接合被降低。 这样的半导体基板可以通过以下步骤形成：将第一基板设置在基板接合室中，该基板接合室包括设置有多个开口的基板支撑基座，设置在多个开口中的基板支撑机构，以及升降机构 其升高和降低基板支撑机构; 将第二基板设置在所述第一基板上以不与所述第一基板接触; 以及通过使用升高和降低机构来将第一基板结合到第二基板以升高基板支撑机构。

公开(公告)号：US20080214021A1

公开(公告)日：2008-09-04

申请号：US11972029

申请日：2008-01-10

申请人： Koichiro TANAKA ,  Tomoaki MORIWAKA ,  Takatsugu OMATA ,  Junpei MOMO

发明人： Koichiro TANAKA ,  Tomoaki MORIWAKA ,  Takatsugu OMATA ,  Junpei MOMO

IPC分类号： H01L21/268

CPC分类号： H01L29/045 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L27/1266 ,  H01L27/1285

摘要： It is an object of the present invention to align the plane orientations of crystal grains of a semiconductor film crystallized by irradiation with a linear laser beam with a width of less than or equal to 5 μm. By performing irradiation with the linear laser beam condensed by an aspheric cylindrical lens or a gradient index lens to completely melt the semiconductor film and scanning the linear laser beam, the completely melted semiconductor film is made to grow laterally. Because the linear beam is very narrow, the width of the semiconductor which is in a liquid state is also narrow, so the occurrence of turbulent flow in the liquid semiconductor is suppressed. Therefore, growth directions of adjacent crystal grains do not become disordered due to turbulent flow and are unformalized, and thus the plane orientations of the laterally grown crystal grains can be aligned.

摘要翻译： 本发明的目的是使通过照射结晶的半导体膜的晶粒的平面取向与宽度小于或等于5μm的线性激光束对准。 通过用由非球面柱面透镜或梯度折射率透镜聚焦的线性激光束进行照射，以完全熔化半导体膜并扫描线性激光束，使完全熔化的半导体膜横向生长。 由于线性光束非常窄，所以处于液态的半导体的宽度也窄，所以液体半导体中的紊流的发生被抑制。 因此，相邻晶粒的生长方向由于湍流而不会变得无序，并且是非形状化的，因此横向生长的晶粒的平面取向可以对齐。

公开(公告)号：US20080131663A1

公开(公告)日：2008-06-05

申请号：US11945891

申请日：2007-11-27

申请人： Koichiro TANAKA ,  Takatsugu OMATA

发明人： Koichiro TANAKA ,  Takatsugu OMATA

IPC分类号： B32B3/30 ,  H01L21/20

CPC分类号： H01L21/0243 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/02658 ,  H01L21/02672 ,  H01L21/02683 ,  H01L21/268 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/78675 ,  H01L29/7881 ,  Y10T428/24355

摘要： To form a semiconductor film with a thickness of 50 nm or less, which includes a large grain crystal by totally melting the semiconductor film with a laser beam. A projection having a triangular cross section is formed on the surface of a semiconductor film. The shape of the projection is a conical shape or a triangular prismatic shape. A laser beam which has entered a projection of the semiconductor film travels toward a substrate while being greatly refracted and totally reflected at the interface between the projection and the air. Further, since the laser beam enters the semiconductor film from a projection, the laser beam which is incident on the interface between an insulating film and a semiconductor is very likely totally reflected. Thus, when a laser beam enters a semiconductor film from a projection, the time during which the laser beam propagates through the semiconductor film is longer, which can increase the absorptance of the semiconductor film.

摘要翻译： 为了形成厚度为50nm以下的半导体膜，其通过用激光束全部熔融半导体膜而形成大晶粒。 在半导体膜的表面上形成具有三角形截面的突起。 突起的形状是圆锥形或三角棱柱形。 已经进入半导体膜的投影的激光束在朝向基板的同时大大折射并且在突起和空气之间的界面处全反射。 此外，由于激光束从投影部进入半导体膜，入射到绝缘膜和半导体之间的界面的激光束很可能被完全反射。 因此，当激光束从投影进入半导体膜时，激光束通过半导体膜传播的时间更长，这可以增加半导体膜的吸收率。