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公开(公告)号：US20110241008A1
公开(公告)日：2011-10-06
申请号：US13162791
申请日：2011-06-17
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
IPC分类号： H01L33/08
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is foamed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，用于除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后将开口发泡的有机树脂膜用含有无机绝缘膜覆盖，所述无机绝缘膜比有机树脂膜透湿少。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。
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公开(公告)号：US20110309364A1
公开(公告)日：2011-12-22
申请号：US13217322
申请日：2011-08-25
IPC分类号： H01L29/786
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulating film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
摘要翻译： 本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分 在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。 形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。 接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。 此后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。 然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。
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公开(公告)号：US20110049522A1
公开(公告)日：2011-03-03
申请号：US12711611
申请日：2010-02-24
IPC分类号： H01L33/00
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially is by etching to expose an active layer of the TFT.
摘要翻译： 本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分 在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。 形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。 接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。 然后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。 然后，在有机树脂膜的开口部分，通过蚀刻部分地开启含有氮的栅极绝缘膜和双层无机绝缘膜，以暴露TFT的有源层。
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公开(公告)号：US20080230871A1
公开(公告)日：2008-09-25
申请号：US12122823
申请日：2008-05-19
申请人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
发明人： Shunpei YAMAZAKI , Satoshi MURAKAMI , Masahiko HAYAKAWA , Kiyoshi KATO , Mitsuaki OSAME , Takashi HIROSUE , Saishi FUJIKAWA
IPC分类号： H01L29/92
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，用于除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。
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公开(公告)号：US20110278578A1
公开(公告)日：2011-11-17
申请号：US13192596
申请日：2011-07-28
IPC分类号： H01L33/16 , H01L29/786 , H01L29/04
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： A display device according to the present invention includes: a planarization layer for insulating between a gate electrode etc. and a data wiring, a drain electrode, or the like of the transistor; and a barrier layer that is formed on an upper surface or lower surface of the planarization layer and at the same time, adapted to suppress diffusion of moisture or degassing components from the planarization layer. The display device adopts a device structure effective in reducing the plasma damage on the planarization layer by devising a positional relationship between the planarization layer and the barrier layer. Also, in combination with a novel structure as a structure for a pixel electrode, effects such as an increase in luminance can be provided as well.
摘要翻译： 根据本发明的显示装置包括：用于在晶体管的栅电极等与数据布线，漏极等之间绝缘的平坦化层; 以及形成在平坦化层的上表面或下表面上并且同时适于抑制水分或脱气组分从平坦化层扩散的阻挡层。 显示装置采用通过设计平坦化层与阻挡层之间的位置关系有效地减小平坦化层上的等离子体损伤的装置结构。 而且，与作为像素电极的结构的新颖结构相结合，也可以提供诸如亮度增加的效果。
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公开(公告)号：US20090315032A1
公开(公告)日：2009-12-24
申请号：US12492165
申请日：2009-06-26
IPC分类号： H01L33/00
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/124 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3258 , H01L27/326 , H01L27/3262 , H01L29/4958 , H01L29/4966 , H01L29/78645 , H01L51/5237 , H01L51/524 , H01L51/5253 , H01L51/5271 , H01L2251/5315
摘要： A display device according to the present invention includes: a planarization layer for insulating between a gate electrode etc. and a data wiring, a drain electrode, or the like of the transistor; and a barrier layer that is formed on an upper surface or lower surface of the planarization layer and at the same time, adapted to suppress diffusion of moisture or degassing components from the planarization layer. The display device adopts a device structure effective in reducing the plasma damage on the planarization layer by devising a positional relationship between the planarization layer and the barrier layer. Also, in combination with a novel structure as a structure for a pixel electrode, effects such as an increase in luminance can be provided as well.
摘要翻译： 根据本发明的显示装置包括：用于在晶体管的栅电极等与数据布线，漏极等之间绝缘的平坦化层; 以及形成在平坦化层的上表面或下表面上并且同时适于抑制水分或脱气组分从平坦化层扩散的阻挡层。 显示装置采用通过设计平坦化层与阻挡层之间的位置关系有效地减小平坦化层上的等离子体损伤的装置结构。 而且，与作为像素电极的结构的新颖结构相结合，也可以提供诸如亮度增加的效果。
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公开(公告)号：US20130049026A1
公开(公告)日：2013-02-28
申请号：US13396625
申请日：2012-02-15
IPC分类号： H01L33/08
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
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公开(公告)号：US20100025688A1
公开(公告)日：2010-02-04
申请号：US12533669
申请日：2009-07-31
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer, a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译： 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 在所述有源层上形成的第一氮化物绝缘膜，形成在所述第一氮化物绝缘膜上的感光性有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。
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公开(公告)号：US20100285661A1
公开(公告)日：2010-11-11
申请号：US12840349
申请日：2010-07-21
IPC分类号： H01L21/283
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor, a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译： 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜，通过栅极绝缘膜与有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。
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公开(公告)号：US20100283067A1
公开(公告)日：2010-11-11
申请号：US12840350
申请日：2010-07-21
IPC分类号： H01L33/08
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译： 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。
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