-
公开(公告)号：US08643021B2
公开(公告)日：2014-02-04
申请号：US13371524
申请日：2012-02-13
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosure , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosure , Saishi Fujikawa
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L31/062 , H01L31/113 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译： 形成包括层间绝缘的半导体显示装置。 具体地说，形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。
-
公开(公告)号：US08120033B2
公开(公告)日：2012-02-21
申请号：US12840350
申请日：2010-07-21
IPC分类号： H01L29/04
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译： 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。
-
公开(公告)号：US07999263B2
公开(公告)日：2011-08-16
申请号：US11196251
申请日：2005-08-04
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译： 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。
-
公开(公告)号：US07994504B2
公开(公告)日：2011-08-09
申请号：US12533669
申请日：2009-07-31
IPC分类号： H01L29/04
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer, a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
摘要翻译： 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 在所述有源层上形成的第一氮化物绝缘膜，形成在所述第一氮化物绝缘膜上的感光性有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。
-
公开(公告)号：US07411215B2
公开(公告)日：2008-08-12
申请号：US10412234
申请日：2003-04-14
IPC分类号： H01L31/036
CPC分类号： H01L33/44 , H01L27/12 , H01L27/1248 , H01L27/1288 , H01L29/78621 , H01L2924/0002 , H01L2924/00
摘要： To achieve promotion of stability of operational function of display device and enlargement of design margin in circuit design, in a display device including a pixel portion having a semiconductor element and a plurality of pixels provided with pixel electrodes connected to the semiconductor element on a substrate, the semiconductor element includes a photosensitive organic resin film as an interlayer insulating film, an inner wall face of a first opening portion provided at the photosensitive organic resin film is covered by a second insulating nitride film, a second opening portion provided at an inorganic insulating film is provided on an inner side of the first opening portion, the semiconductor and a wiring are connected through the first opening portion and the second opening portion and the pixel electrode is provided at a layer on a lower side of an activation layer.
摘要翻译： 为了实现显示装置的操作功能的稳定性和电路设计中的设计余量的增加，在包括具有半导体元件的像素部分和设置有与基板上的半导体元件连接的像素电极的多个像素的显示装置中， 半导体元件包括作为层间绝缘膜的光敏有机树脂膜，设置在感光性有机树脂膜上的第一开口部的内壁面由第二绝缘氮化物膜覆盖，设置在无机绝缘膜上的第二开口部 设置在第一开口部的内侧，半导体和布线通过第一开口部和第二开口部连接，并且像素电极设置在活化层的下侧的层。
-
公开(公告)号：US20070096106A1
公开(公告)日：2007-05-03
申请号：US11633579
申请日：2006-12-05
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。
-
公开(公告)号：US06911688B2
公开(公告)日：2005-06-28
申请号：US10412687
申请日：2003-04-14
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
IPC分类号： H01L51/50 , G09F9/30 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/32 , H01L29/49 , H01L29/786 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，用于除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。
-
公开(公告)号：US20130049026A1
公开(公告)日：2013-02-28
申请号：US13396625
申请日：2012-02-15
IPC分类号： H01L33/08
CPC分类号： H01L27/1248 , G02F1/133512 , G02F1/1337 , G02F1/1339 , G02F1/1341 , G02F1/13439 , G02F1/136213 , G02F1/136227 , G02F1/136286 , G02F1/1368 , G02F2201/123 , H01L23/3171 , H01L23/49827 , H01L27/1218 , H01L27/124 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/786 , H01L29/78606 , H01L29/78651 , H01L2251/5315 , H01L2251/5338 , H01L2924/0002 , Y10S438/95 , H01L2924/00
摘要： A semiconductor having an active layer; a gate insulating film in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second, nitride insulating film. A first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.
-
公开(公告)号：US20120205658A1
公开(公告)日：2012-08-16
申请号：US13371524
申请日：2012-02-13
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
IPC分类号： H01L29/786 , H01L29/02
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译： 形成包括层间绝缘的半导体显示装置。 具体地说，形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。
-
公开(公告)号：US08115210B2
公开(公告)日：2012-02-14
申请号：US13162791
申请日：2011-06-17
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame , Takashi Hirosue , Saishi Fujikawa
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L29/76 , H01L31/112 , H01L27/108 , H01L29/12 , H01L31/062 , H01L31/113
CPC分类号： H01L27/1244 , G02F1/136204 , H01L21/76804 , H01L21/76831 , H01L27/1248 , H01L27/1255 , H01L27/3244 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78645 , H01L51/0037 , Y10S257/906 , Y10S257/908
摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is foamed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。
-
-
-
-
-
-
-
-
-
搜索结果
5368 条记录 (耗时 0.046 秒)
