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公开(公告)号：US20080213954A1
公开(公告)日：2008-09-04
申请号：US12041014
申请日：2008-03-03
IPC分类号： H01L21/336
CPC分类号： H01L27/127 , G02F1/13454 , H01L27/1203 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/78696
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
摘要翻译： 具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。 在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。 在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。
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公开(公告)号：US07371620B2
公开(公告)日：2008-05-13
申请号：US11421989
申请日：2006-06-02
IPC分类号： H01L21/84
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译： 通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。 在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布 。 例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜 线性激光束的长度方向的长度。 这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。
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3.发明申请Method of laser annealing using linear beam having quasi-trapezoidal energy profile for increased depth of focus 失效使用具有准梯形能量分布的线性光束进行激光退火的方法，以增加焦深公开(公告)号：US20070141768A1
公开(公告)日：2007-06-21
申请号：US11672984
申请日：2007-02-09
CPC分类号： H01L21/02686 , B23K26/073 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A linear pulse laser beam to be applied to an illumination surface is so formed as to have, at the focus, an energy profile in the width direction which satisfies inequalities 0.5L1≦L2≦L1 and 0.5L1≦L3≦L1 where assuming that a maximum energy is 1, L1 is a beam width of two points having an energy of 0.95 and L1 +L2 +L3 is a beam width of two points having an energy of 0.70, L2 and L3 occupying two peripheral portions of the beam width. According to another aspect of the invention, a compound-eye-like fly-eye lens for expanding a pulse laser beam in a sectional manner is provided upstream of a cylindrical lens for converging the laser beam into a linear beam.
摘要翻译： 施加到照明表面的线性脉冲激光束被形成为在焦点处具有宽度方向上的能量分布，其满足不等式0.5L 1 <= L 2 <= L 1和0.5L 1 < L 3 <= L 1其中，假设最大能量为1，L 1是具有0.95的能量的两点的波束宽度，L 1 + L 2 + L 3是具有0.70的能量的两点的波束宽度 ，L 2和L 3占据梁宽度的两个周边部分。 根据本发明的另一方面，在用于将激光束会聚到线性光束的柱面透镜的上游设置用于以分段方式扩展脉冲激光束的复眼型飞眼透镜。
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公开(公告)号：US20060228837A1
公开(公告)日：2006-10-12
申请号：US11421989
申请日：2006-06-02
IPC分类号： H01L21/84
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译： 通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。 在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布 。 例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜 线性激光束的长度方向的长度。 这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。
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公开(公告)号：US06587277B2
公开(公告)日：2003-07-01
申请号：US10024855
申请日：2001-12-18
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
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公开(公告)号：US06388812B2
公开(公告)日：2002-05-14
申请号：US09812360
申请日：2001-03-19
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译： 通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。 在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布 。 例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜 线性激光束的长度方向的长度。 这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。
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公开(公告)号：US06353244B1
公开(公告)日：2002-03-05
申请号：US08908281
申请日：1997-08-07
IPC分类号： H01L2701
CPC分类号： H01L27/1203 , G02F1/13454
摘要： A TFT having a high threshold voltage is connected to the source electrode of each TFT that constitutes a CMOS circuit. In another aspect, pixel thin-film transistors are constructed such that a thin-film transistor more distant from a gate line drive circuit has a lower threshold voltage. In a further aspect, a control film that is removable in a later step is formed on the surface of the channel forming region of a TFT, and doping is performed from above the control film.
摘要翻译： 具有高阈值电压的TFT连接到构成CMOS电路的每个TFT的源电极。 在另一方面，像素薄膜晶体管被构造成使得离栅极线驱动电路更远的薄膜晶体管具有较低的阈值电压。 在另一方面，在TFT的沟道形成区域的表面上形成可在后续步骤中移除的控制膜，并且从控制膜的上方进行掺杂。
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8.发明授权Method of producing a semiconductor device with overlapped scanned linear lasers 失效用重叠扫描线性激光器制造半导体器件的方法公开(公告)号：US06242292B1
公开(公告)日：2001-06-05
申请号：US08572104
申请日：1995-12-14
IPC分类号： H01L2184
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/66765 , H01L29/78696
摘要： In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
摘要翻译： 在通过激光照射进行退火来制造半导体器件的同时，在垂直于线的方向上扫描线性激光，对半导体材料进行退火。 在这种状态下，由于在与线方向对应的光束横向的退火效应是与扫描方向相反的2倍以上的退火效应，因此沿着照射线状激光的线方向形成多个半导体元件 。 而且，连接薄膜晶体管的源极和漏极区域的线方向与线性激光的线方向对准。
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公开(公告)号：US06215595B1
公开(公告)日：2001-04-10
申请号：US09583450
申请日：2000-05-30
IPC分类号： G02B2710
CPC分类号： G02B19/0057 , B23K26/0613 , B23K26/067 , B23K26/0738 , G02B19/0014 , G02B19/0095 , G02B27/09 , G02B27/0905 , G02B27/0927 , G02B27/0961 , G02B27/0966 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02686 , H01L27/1285 , H01L27/1296
摘要： There is provided an improvement on homogeneity of annealing performed utilizing radiation of a laser beam on a silicon film having a large area. In a configuration wherein a linear laser beam is applied to a surface to be irradiated, optimization is carried out on the width and number of cylindrical lenses forming homogenizers 103 and 104 for controlling the distribution of radiation energy density in the longitudinal direction of the linear beam. For example, the width of the cylindrical lenses forming the homogenizers 103 and 104 is set in the range from 0.1 mm to 5 mm, and the number of the lenses is chosen such that one lens is provided for every 5 mm-15 mm along the length of the linear laser beam in the longitudinal direction thereof. This makes it possible to improve homogeneity of the radiation energy density of the linear laser in the longitudinal direction thereof.
摘要翻译： 通过激光束的辐射对具有大面积的硅膜进行的退火的均匀性提供了改进。 在将线性激光束施加到被照射面的构造中，对形成均匀器103,104的圆柱透镜的宽度和数量进行优化，以控制线束的纵向辐射能量密度分布 。 例如，形成均化器103和104的圆柱形透镜的宽度设定在0.1mm至5mm的范围内，并且选择透镜的数量使得沿着每5mm-15mm设置一个透镜 线性激光束的长度方向的长度。 这使得可以提高线性激光器在其纵向方向上的辐射能量密度的均匀性。
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10.发明授权Semiconductor device having channel refractive index in first and second directions 失效半导体器件在第一和第二方向上具有沟道折射率
公开(公告)号：US6054739A
公开(公告)日：2000-04-25
申请号：US10486
申请日：1998-01-21
IPC分类号： H01L21/02 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L27/12 , H01L29/04 , H01L29/786 , H01L21/26
CPC分类号： H01L29/78696 , H01L21/2026 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/66765
摘要： In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.
摘要翻译： 在通过激光照射进行退火来制造半导体器件的同时，在垂直于线的方向上扫描线性激光，对半导体材料进行退火。 在这种状态下，由于在与线方向对应的光束横向的退火效应是与扫描方向相反的2倍以上的退火效应，因此沿着照射线状激光的线方向形成多个半导体元件 。 而且，连接薄膜晶体管的源极和漏极区域的线方向与线性激光的线方向对准。
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