Method of forming semiconductor device
    1.
    发明授权
    Method of forming semiconductor device 失效
    半导体器件形成方法

    公开(公告)号:US5926735A

    公开(公告)日:1999-07-20

    申请号:US802685

    申请日:1997-02-19

    摘要: There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.

    摘要翻译: 公开了一种具有薄膜晶体管(TFT)的高度集成电路的制造方法,用作有源矩阵液晶显示器(LCD)面板中的外围驱动电路,每个像素阵列均具有电荷转移控制TFT,能够促进 在由诸如铝的阳极氧化金属制成的TFT和引线的栅电极上形成阳极氧化膜的情况下,形成接触孔是困难的。 该方法包括执行阳极氧化,同时使抗蚀剂掩模设置在由铝制成的引线和电极的一部分上,从而部分地消除在引线和电极上形成阳极氧化膜。 在后面的制造步骤中,通过使用其上没有形成阳极氧化膜的部分形成每个接触。 这可以允许使用铝作为引线,同时能够容易地制造用于其的触点。

    Method of manufacturing a semiconductor device
    4.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US06211535B1

    公开(公告)日:2001-04-03

    申请号:US09426947

    申请日:1999-10-26

    IPC分类号: H01L2348

    摘要: Method of forming an active layer for TFTs without plasma-damaging the side surfaces of the active layer. The method is started with forming a crystalline silicon film on a glass substrate. A resist mask is placed on the silicon film. The silicon film is etched with an etchant gas consisting mainly of a halogen fluoride gas, thus forming the active layer. During this process, the etchant gas is not changed into a plasma to prevent the side surfaces of the active layer from being plasma-damaged. ClF3 can be used as the halogen fluoride gas.

    摘要翻译: 形成TFT的有源层的方法,不会对有源层的侧表面造成等离子体损害。 该方法开始于在玻璃基板上形成结晶硅膜。 将抗蚀剂掩模放置在硅膜上。 用主要由卤素氟化物气体组成的蚀刻剂气体蚀刻硅膜,从而形成活性层。 在该过程中,蚀刻剂气体不会变成等离子体,以防止有源层的侧表面被等离子体损坏。 ClF3可用作卤素氟化物气体。

    Method of manufacturing a display device including a peripheral circuit area and a pixel area on the same substrate
    5.
    发明授权
    Method of manufacturing a display device including a peripheral circuit area and a pixel area on the same substrate 有权
    制造包括同一基板上的外围电路区域和像素区域的显示装置的方法

    公开(公告)号:US06201591B1

    公开(公告)日:2001-03-13

    申请号:US09425117

    申请日:1999-10-20

    IPC分类号: G02F11345

    CPC分类号: G02F1/13454 G02F1/133351

    摘要: In forming four liquid crystal panels on a glass substrate, layout is so made that peripheral driving circuit areas of the respective panels are opposed to each other. With this layout, the peripheral driving circuit areas, which are prone to be affected by particles, are prevented from existing in regions close to the perimeter of the glass substrate. This allows liquid crystal panels to be produced at a high yield, as well as enables efficient use of the glass substrate.

    摘要翻译: 在玻璃基板上形成四个液晶面板时,使得各个面板的外围驱动电路区域彼此相对的布局。 利用该布局,防止容易受到颗粒影响的外围驱动电路区域存在于靠近玻璃基板的周边的区域中。 这允许以高产率制造液晶面板,并且能够有效地使用玻璃基板。

    Manufacturing method of display device
    6.
    发明授权
    Manufacturing method of display device 有权
    显示装置的制造方法

    公开(公告)号:US06327015B2

    公开(公告)日:2001-12-04

    申请号:US09774815

    申请日:2001-01-30

    IPC分类号: G02F11333

    CPC分类号: G02F1/13454 G02F1/133351

    摘要: In forming four liquid crystal panels on a glass substrate, layout is so made that peripheral driving circuit areas of the respective panels are opposed to each other. With this layout, the peripheral driving circuit areas, which are prone to be affected by particles, are prevented from existing in regions close to the perimeter of the glass substrate. This allows liquid crystal panels to be produced at a high yield, as well as enables efficient use of the glass substrate.

    摘要翻译: 在玻璃基板上形成四个液晶面板时,使得各个面板的外围驱动电路区域彼此相对的布局。 利用该布局,防止容易受到颗粒影响的外围驱动电路区域存在于靠近玻璃基板的周边的区域中。 这允许以高产率制造液晶面板,并且能够有效地使用玻璃基板。

    Thin structure of display panel
    8.
    发明授权
    Thin structure of display panel 失效
    显示面板结构薄

    公开(公告)号:US4514042A

    公开(公告)日:1985-04-30

    申请号:US422140

    申请日:1982-09-23

    IPC分类号: G02F1/13 H05K3/32

    CPC分类号: G02F1/13452 H05K3/325

    摘要: A display module comprises a display device for displaying visual information, an electrode disposed on the display device, a circuit board for carrying wiring lines connected to circuit elements for driving the display deivce, and a conductive elastomer body for connecting the wiring lines and the electrode, the conductive elastomer body being placed between the electrode and a curled edge a flange of the circuit board. In a specific form, the display device is a liquid crystal display cell.

    摘要翻译: 显示模块包括用于显示视觉信息的显示装置,设置在显示装置上的电极,用于承载连接到用于驱动显示屏的电路元件的布线的电路板,以及用于连接布线和电极的导电弹性体 导电弹性体被放置在电极和卷曲边缘之间,电路板的凸缘。 在具体形式中,显示装置是液晶显示单元。

    Active matrix display device
    9.
    发明授权
    Active matrix display device 失效
    主动矩阵显示装置

    公开(公告)号:US06229531B1

    公开(公告)日:2001-05-08

    申请号:US08919253

    申请日:1997-08-27

    IPC分类号: G09G500

    摘要: An active matrix display device comprising an integrated peripheral driver circuit improved in image quality, provided in such a constitution that the feed through voltage &Dgr;Vs is set lower than the voltage Vgr necessary for realizing a single gradation. In this manner, a stable gradation display is obtained without being influenced by the feed through voltage &Dgr;Vs even when the fluctuation in the characteristics of the thin-film transistors provided in active matrix circuit may fluctuate the &Dgr;Vs.

    摘要翻译: 一种有源矩阵显示装置,其特征在于,具有提高图像质量的集成外围驱动电路,其特征在于,将馈电电压DELTAV设定为低于实现单一灰度所需的电压Vgr。 以这种方式,即使当有源矩阵电路中提供的薄膜晶体管的特性的波动可能会使DELTAV波动时,也不会受馈电电压DELTAV的影响而获得稳定的灰度显示。

    Active matrix electro-optical device
    10.
    发明授权
    Active matrix electro-optical device 有权
    有源矩阵电光装置

    公开(公告)号:US06108056A

    公开(公告)日:2000-08-22

    申请号:US433602

    申请日:1999-11-02

    摘要: In an active matrix display device integrated with a peripheral drive circuit using thin film transistors, when Vgr is a voltage required for one gradation, Ct is capacitance of all pixels, Cgd is capacitance between a gate and a drain, .DELTA.Vg is a difference between ON/OFF gate voltages, and .DELTA.Vs is a feedthrough voltage, the respective parameters satisfy an expression: .vertline.Vgr.vertline.>.vertline.(1/Ct) [Cgd.multidot..DELTA.Vg-Ct.multidot..DELTA.Vs].vertline.. According to this, even if dispersion occurs in the characteristics of the thin film transistors arranged for a buffer circuit or an active matrix circuit, it is possible to prevent the dispersion from influencing the gradation display.

    摘要翻译: 在与使用薄膜晶体管的外围驱动电路集成的有源矩阵显示装置中,当Vgr是一个灰度所需的电压时,Ct是所有像素的电容,Cgd是栅极和漏极之间的电容,DELTA Vg是 ON / OFF栅极电压和DELTA Vs是馈通电压,各个参数满足以下表达式:| Vgr |> |(1 / Ct)[Cgdx DELTA Vg-Ctx DELTA Vs] |。 据此,即使在布置用于缓冲电路或有源矩阵电路的薄膜晶体管的特性中发生色散,也可以防止色散影响灰度显示。