Method of forming semiconductor device
    1.
    发明授权
    Method of forming semiconductor device 失效
    半导体器件形成方法

    公开(公告)号:US5926735A

    公开(公告)日:1999-07-20

    申请号:US802685

    申请日:1997-02-19

    摘要: There is disclosed a manufacturing method of highly integrated circuits with thin-film transistors (TFTs) for use as peripheral driver circuitry in active-matrix liquid crystal display (LCD) panel with a pixel array each having a charge transfer control TFT, capable of facilitating formation of contact holes otherwise being difficult in cases where an anode oxide film is formed on gate electrodes of TFTs and lead wires both of which are made of anodizable metal, such as aluminum. The method includes execution of anodization while causing a resist mask to be disposed on part of the lead wire and electrode made of aluminum, thereby partly eliminating formation of the anode oxide film on the lead wire and electrode. At a later step of fabrication, each contact is formed by use of such portion that has no anode oxide film formed thereon. This may allow aluminum to be employed as lead wires while enabling easy fabrication of contacts therefor.

    摘要翻译: 公开了一种具有薄膜晶体管(TFT)的高度集成电路的制造方法,用作有源矩阵液晶显示器(LCD)面板中的外围驱动电路,每个像素阵列均具有电荷转移控制TFT,能够促进 在由诸如铝的阳极氧化金属制成的TFT和引线的栅电极上形成阳极氧化膜的情况下,形成接触孔是困难的。 该方法包括执行阳极氧化,同时使抗蚀剂掩模设置在由铝制成的引线和电极的一部分上,从而部分地消除在引线和电极上形成阳极氧化膜。 在后面的制造步骤中,通过使用其上没有形成阳极氧化膜的部分形成每个接触。 这可以允许使用铝作为引线,同时能够容易地制造用于其的触点。

    IC card and booking account system using the IC card
    5.
    发明授权
    IC card and booking account system using the IC card 有权
    IC卡和预订账号系统使用IC卡

    公开(公告)号:US07518692B2

    公开(公告)日:2009-04-14

    申请号:US10739084

    申请日:2003-12-19

    IPC分类号: G02F1/1339 G02F1/1345

    摘要: It is an object of the present invention to provide a highly sophisticated functional card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. A card comprising a display device and a thin film integrated circuit; wherein driving of the display device is controlled by the thin film integrated circuit; a semiconductor element used for the thin film integrated circuit and the display device is formed by using a polycrystalline semiconductor film; the thin film integrated circuit and the display device are sealed with a resin between a first substrate and a second substrate of the card; and the first substrate and the second substrate are plastic substrates.

    摘要翻译: 本发明的目的是提供一种高度复杂的功能卡,其可以通过防止诸如改变脸部照片的伪造,以及显示其他图像以及脸部照片来确保安全性。 一种包括显示装置和薄膜集成电路的卡; 其中所述显示装置的驱动由所述薄膜集成电路控制; 通过使用多晶半导体膜形成用于薄膜集成电路的半导体元件和显示装置; 薄膜集成电路和显示装置用卡在第一基板和第二基板之间的树脂密封; 并且第一基板和第二基板是塑料基板。

    Semiconductor device and manufacturing method thereof
    8.
    发明授权
    Semiconductor device and manufacturing method thereof 有权
    半导体装置及其制造方法

    公开(公告)号:US07329985B2

    公开(公告)日:2008-02-12

    申请号:US11479802

    申请日:2006-06-30

    IPC分类号: H05B33/12

    摘要: A self-light emitting display device with top-emission usually has no film that is capable of light shielding. Therefore, it is necessary to form a light-shielding layer additionally with, which leads the number of processes to increase.In the present invention, plural films selected from a first coloring layer 161, a second coloring layer 162, and a third coloring layer 163 formed on an opposing substrate are laminated to form a light-shielding portion without using a light-shielding mask.

    摘要翻译: 具有顶部发射的自发光显示装置通常不具有能够遮光的膜。 因此,需要另外形成遮光层,导致加工次数增加。 在本发明中,从形成在相对基板上的第一着色层161,第二着色层162和第三着色层163中选择的多个膜被层压以形成遮光部分而不使用遮光掩模。