公开(公告)号：US07964874B2

公开(公告)日：2011-06-21

申请号：US12122823

申请日：2008-05-19

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L27/108 ,  H01L29/04 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

公开(公告)号：US07148510B2

公开(公告)日：2006-12-12

申请号：US11151260

申请日：2005-06-14

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

公开(公告)号：US06992332B2

公开(公告)日：2006-01-31

申请号：US10428952

申请日：2003-05-05

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

IPC分类号： H01L27/15

CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5271 ,  H01L2251/5315

摘要： A light emitting element containing an organic compound has a disadvantage in that it tends to be deteriorated by various factors, so that the greatest problem thereof is to increase its reliability (make longer its life span). The present invention provides a method for manufacturing an active matrix type light emitting device and the configuration of such an active matrix type light emitting device having high reliability. In the method, a contact hole extending to a source region or a drain region is formed, and then an interlayer insulation film made of a photosensitive organic insulating material is formed on an interlayer insulation film. The interlayer insulation film has a curved surface on its upper end portion. Subsequently, an interlayer insulation film provided as a silicon nitride film having a film thickness of 20 to 50 nm is formed by a sputtering method using RF power supply.

公开(公告)号：US06960786B2

公开(公告)日：2005-11-01

申请号：US10426950

申请日：2003-05-01

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Mitsuaki Osame

IPC分类号： G09F9/30 ,  H01L21/00 ,  H01L21/336 ,  H01L27/32 ,  H01L29/04 ,  H01L29/786 ,  H01L31/0336 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L51/50 ,  H05B33/12 ,  H05B33/14 ,  H05B33/22

CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

摘要： A display device according to the present invention includes: a planarization layer for insulating between a gate electrode etc. and a data wiring, a drain electrode, or the like of the transistor; and a barrier layer that is formed on an upper surface or lower surface of the planarization layer and at the same time, adapted to suppress diffusion of moisture or degassing components from the planarization layer. The display device adopts a device structure effective in reducing the plasma damage on the planarization layer by devising a positional relationship between the planarization layer and the barrier layer. Also, in combination with a novel structure as a structure for a pixel electrode, effects such as an increase in luminance can be provided as well.

摘要翻译： 根据本发明的显示装置包括：用于在晶体管的栅电极等与数据布线，漏极等之间绝缘的平坦化层; 以及形成在平坦化层的上表面或下表面上并且同时适于抑制水分或脱气组分从平坦化层扩散的阻挡层。 显示装置采用通过设计平坦化层与阻挡层之间的位置关系有效地减小平坦化层上的等离子体损伤的装置结构。 而且，与作为像素电极的结构的新颖结构相结合，也可以提供诸如亮度增加的效果。

公开(公告)号：US20050233507A1

公开(公告)日：2005-10-20

申请号：US11151260

申请日：2005-06-14

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

IPC分类号： H01L51/50 ,  G09F9/30 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786 ,  H01L29/40

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then. covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后形成开口的有机树脂膜。 覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

公开(公告)号：US08643021B2

公开(公告)日：2014-02-04

申请号：US13371524

申请日：2012-02-13

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosure ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosure ,  Saishi Fujikawa

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L31/062 ,  H01L31/113 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 形成包括层间绝缘的半导体显示装置。 具体地说，形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

公开(公告)号：US20120261667A1

公开(公告)日：2012-10-18

申请号：US13531610

申请日：2012-06-25

申请人： Shunpei YAMAZAKI ,  Satoshi Murakami ,  Mitsuaki Osame

发明人： Shunpei YAMAZAKI ,  Satoshi Murakami ,  Mitsuaki Osame

IPC分类号： H01L27/15 ,  H01L29/786

CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

摘要： A display device according to the present invention includes a barrier layer formed over the transistor and a planarization layer formed over the barrier layer. The planarization layer has an opening and an edge portion of the planarization layer formed at the opening of the planarization layer is rounded. Further, a resin film is formed over the planarization layer and in the opening of the planarization layer, and the resin film also has an opening and an edge portion of the resin film formed at the opening of the resin film is rounded. A light emitting member is formed over the resin film.

摘要翻译： 根据本发明的显示装置包括形成在晶体管上的阻挡层和形成在阻挡层上的平坦化层。 平坦化层具有开口，并且在平坦化层的开口处形成的平坦化层的边缘部分是圆形的。 此外，在平坦化层和平坦化层的开口中形成树脂膜，树脂膜也具有开口，并且在树脂膜的开口处形成的树脂膜的边缘部分是圆形的。 在树脂膜上形成发光部件。

公开(公告)号：US20070096106A1

公开(公告)日：2007-05-03

申请号：US11633579

申请日：2006-12-05

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

公开(公告)号：US06911688B2

公开(公告)日：2005-06-28

申请号：US10412687

申请日：2003-04-14

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

IPC分类号： H01L51/50 ,  G09F9/30 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L27/32 ,  H01L29/49 ,  H01L29/786 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，用于除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

公开(公告)号：US20120205658A1

公开(公告)日：2012-08-16

申请号：US13371524

申请日：2012-02-13

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame ,  Takashi Hirosue ,  Saishi Fujikawa

IPC分类号： H01L29/786 ,  H01L29/02

CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

摘要： A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

摘要翻译： 形成包括层间绝缘的半导体显示装置。 具体地说，形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后，形成有开口部的有机树脂膜被覆盖有比有机树脂膜透过少的水分的含氮无机绝缘膜。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。