公开(公告)号：US09382611B2

公开(公告)日：2016-07-05

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： B28B1/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US08889477B2

公开(公告)日：2014-11-18

申请号：US13603484

申请日：2012-09-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： H01L21/00 ,  C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 制造包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US20120312681A1

公开(公告)日：2012-12-13

申请号：US13488626

申请日：2012-06-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/34 ,  B28B1/00

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

摘要翻译： 已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。 因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。 使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。 通过混合原料形成靶，使其组成比可以得到晶体结构。

公开(公告)号：US20120325650A1

公开(公告)日：2012-12-27

申请号：US13603502

申请日：2012-09-05

申请人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Tetsunori Maruyama ,  Yuki Imoto ,  Hitomi Sato ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Takashi Shimazu

IPC分类号： C23C14/08 ,  C23C14/34

CPC分类号： C23C14/08 ,  B28B11/243 ,  C04B35/453 ,  C04B35/64 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/76 ,  C23C14/086 ,  C23C14/3414 ,  C23C14/345 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

公开(公告)号：US09660092B2

公开(公告)日：2017-05-23

申请号：US13592942

申请日：2012-08-23

申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78696

摘要： Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

公开(公告)号：US09614095B2

公开(公告)日：2017-04-04

申请号：US13568451

申请日：2012-08-07

申请人： Kenichi Okazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama

发明人： Kenichi Okazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama

IPC分类号： H01L29/78 ,  H01L29/786

CPC分类号： H01L29/7869

摘要： An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.

公开(公告)号：US09252279B2

公开(公告)日：2016-02-02

申请号：US13592870

申请日：2012-08-23

申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78606

摘要： To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.

摘要翻译： 提供一种具有稳定的电特性并具有高可靠性的氧化物半导体的半导体装置。 提供制造半导体器件的方法。 半导体器件包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，形成在氧化物半导体膜上的源电极和漏电极以及保护膜。 保护膜包括金属氧化物膜，并且金属氧化物膜具有高于或等于3.2g / cm 3的膜密度。

公开(公告)号：US08860306B2

公开(公告)日：2014-10-14

申请号：US13604028

申请日：2012-09-05

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada ,  Satoshi Seo

IPC分类号： H01L33/00 ,  H01L51/52 ,  H01L51/00

CPC分类号： H01L33/44 ,  H01L51/003 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326

摘要： An object is to provide a highly reliable light emitting device which is thin and is not damaged by external local pressure. Further, another object is to manufacture a light emitting device with a high yield by preventing defects of a shape and characteristics due to external stress in a manufacture process. A light emitting element is sealed between a first structure body in which a fibrous body is impregnated with an organic resin and a second structure body in which a fibrous body is impregnated with an organic resin, whereby a highly reliable light emitting device which is thin and has intensity can be provided. Further, a light emitting device can be manufactured with a high yield by preventing defects of a shape and characteristics in a manufacture process.

摘要翻译： 目的是提供一种非常可靠的发光装置，该发光装置薄且不被外部局部压力损坏。 此外，另一个目的是通过在制造过程中防止由于外部应力引起的形状和特性的缺陷而以高产率制造发光器件。 发光元件被密封在其中纤维体浸渍有机树脂的第一结构体和其中纤维体浸渍有机树脂的第二结构体之间，由此可靠的发光器件是薄的和 可以提供强度。 此外，通过防止制造过程中的形状和特性的缺陷，可以以高产率制造发光器件。

公开(公告)号：US07869119B2

公开(公告)日：2011-01-11

申请号：US12499175

申请日：2009-07-08

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada

IPC分类号： G02B26/00 ,  G09G3/19 ,  G03G13/00

CPC分类号： G02F1/167 ,  G02F2201/50 ,  G02F2201/503 ,  G02F2202/22

摘要： An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.

摘要翻译： 本发明的目的是增加电子纸对外部应力的阻力。 通过在包括第一结构体的第一绝缘膜之间提供包括集成电路部分，第一电极，第二电极和带电粒子的层的元件形成层来增加对外部应力的抵抗性，其中 第一纤维体浸渍有第一有机树脂，第二绝缘膜包括第二结构体，其中第二纤维体浸渍有第二有机树脂。

公开(公告)号：US20100007942A1

公开(公告)日：2010-01-14

申请号：US12499175

申请日：2009-07-08

申请人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada

发明人： Yoshiaki Oikawa ,  Shingo Eguchi ,  Mitsuo Mashiyama ,  Masatoshi Kataniwa ,  Hironobu Shoji ,  Masataka Nakada

IPC分类号： G02F1/167

CPC分类号： G02F1/167 ,  G02F2201/50 ,  G02F2201/503 ,  G02F2202/22

摘要： An object of the present invention is to increase the resistance of electronic paper to external stress. The resistance to external stress is increased by providing an element formation layer, which includes an integrated circuit portion, a first electrode, a second electrode, and a charged particle-containing layer, between a first insulating film including a first structure body in which a first fibrous body is impregnated with a first organic resin, and a second insulating film including a second structure body in which a second fibrous body is impregnated with a second organic resin.

摘要翻译： 本发明的目的是增加电子纸对外部应力的阻力。 通过在包括第一结构体的第一绝缘膜之间提供包括集成电路部分，第一电极，第二电极和带电粒子的层的元件形成层来增加对外部应力的抵抗性，其中 第一纤维体浸渍有第一有机树脂，第二绝缘膜包括第二结构体，其中第二纤维体浸渍有第二有机树脂。