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公开(公告)号：US11677379B2
公开(公告)日：2023-06-13
申请号：US17544120
申请日：2021-12-07
申请人： SiTime Coporation
CPC分类号： H03H9/125 , H03H3/0077 , H03H9/02259 , H03H9/02401 , H03H9/02448 , H03H9/1057 , H03H9/17 , H03H9/2463 , H03H2003/027 , H03H2009/02181 , H03H2009/02307 , H03H2009/155
摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
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公开(公告)号：US20220337218A1
公开(公告)日：2022-10-20
申请号：US17847438
申请日：2022-06-23
申请人： SiTime Coporation
摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
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公开(公告)号：US09712128B2
公开(公告)日：2017-07-18
申请号：US15186510
申请日：2016-06-19
申请人： SiTime Coporation
IPC分类号： H01L41/047 , H03H3/007 , H03H9/17 , H03H9/15 , H03H3/02
CPC分类号： H03H3/0077 , H03H9/02259 , H03H9/02401 , H03H9/02448 , H03H9/1057 , H03H9/17 , H03H9/2463 , H03H2003/027 , H03H2009/02307 , H03H2009/155
摘要： In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.
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公开(公告)号：US11228298B2
公开(公告)日：2022-01-18
申请号：US16245184
申请日：2019-01-10
申请人： SiTime Coporation
摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
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公开(公告)号：US10263596B2
公开(公告)日：2019-04-16
申请号：US15627029
申请日：2017-06-19
申请人： SiTime Coporation
IPC分类号： H01L41/09 , H01L41/22 , H03H9/02 , H03H9/24 , H01L41/253 , H01L41/29 , H01L41/314 , H01L41/047 , H03H3/02 , H03H9/15
摘要： Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.
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公开(公告)号：US20180226942A1
公开(公告)日：2018-08-09
申请号：US15947577
申请日：2018-04-06
申请人： SiTime Coporation
CPC分类号： H03H9/02448 , H01L41/0478 , H01L41/253 , H01L41/29 , H01L41/314 , H03H9/02362 , H03H9/2452 , H03H2003/027 , H03H2009/02307 , H03H2009/155
摘要： A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.
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公开(公告)号：US20180019724A1
公开(公告)日：2018-01-18
申请号：US15627029
申请日：2017-06-19
申请人： SiTime Coporation
IPC分类号： H03H9/02 , H01L41/29 , H01L41/047 , H01L41/314 , H01L41/253 , H03H9/24 , H03H9/15 , H03H3/02
CPC分类号： H03H9/02448 , H03H9/02362 , H03H9/2452 , H03H2003/027 , H03H2009/02307 , H03H2009/155
摘要： Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.
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公开(公告)号：US20240223151A1
公开(公告)日：2024-07-04
申请号：US18402488
申请日：2024-01-02
申请人： SiTime Coporation
CPC分类号： H03H9/02448 , H03H9/02362 , H03H9/2452 , H10N30/04 , H10N30/06 , H10N30/074 , H10N30/878 , H03H2003/027 , H03H2009/02307 , H03H2009/155
摘要： A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.
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公开(公告)号：US20210159875A1
公开(公告)日：2021-05-27
申请号：US17115441
申请日：2020-12-08
申请人： SiTime Coporation
IPC分类号： H03H9/02 , H03H9/24 , H01L41/047 , H01L41/253 , H01L41/29 , H01L41/314
摘要： A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.
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公开(公告)号：US20200028485A1
公开(公告)日：2020-01-23
申请号：US16245184
申请日：2019-01-10
申请人： SiTime Coporation
摘要： A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
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