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23 条记录 (耗时 0.015 秒)

    Method for Tuning the Resonant Frequency of a Piezoelectric Micromachined Ultrasonic Transducer
    1.
    发明公开
    Method for Tuning the Resonant Frequency of a Piezoelectric Micromachined Ultrasonic Transducer 审中-公开

    公开(公告)号：US20240157398A1

    公开(公告)日：2024-05-16

    申请号：US18423200

    申请日：2024-01-25

    申请人： InvenSense, Inc.

    发明人： Stefon Shelton ,  Fabian Goericke ,  Benedict Costello

    IPC分类号： B06B1/06 ,  H10N30/04

    CPC分类号： B06B1/0629 ,  B06B1/0651 ,  B06B1/0666 ,  B06B1/0685 ,  H10N30/04 ,  Y10T29/42

    摘要： The teachings of the present disclosure enable the manufacture of one or more piezoelectric micromachined ultrasonic transducers (PMUTs) having a resonant frequency of a specific target value and/or substantially matched resonant frequencies. In accordance with the present disclosure, a flexible membrane of a PMUT is modified to impart a desired parameter profile for stiffness and/or mass to tune its resonant frequency to a target value. The desired parameter profile is achieved by locally removing or adding material to regions of one or more layers of the flexible membrane to alter its geometric dimensions and/or density. In some embodiments, material is added or removed non-uniformly across the structural layer to realize a material distribution that more strongly affects membrane stiffness than mass. In some embodiments, material having a specific residual stress is added to, and/or removed from, the membrane to define a desired modal stiffness for the membrane.

    System and method for passive damping of mechanical vibrations
    2.
    发明授权
    System and method for passive damping of mechanical vibrations 有权

    公开(公告)号：US11963451B2

    公开(公告)日：2024-04-16

    申请号：US16972213

    申请日：2019-06-06

    申请人： PYTHEAS TECHNOLOGY

    发明人： Gilles Grosso ,  Frédéric Mosca

    IPC分类号： H02N2/18 ,  F16F15/00 ,  F16F15/04 ,  H01L41/113 ,  H10N30/04 ,  H10N30/30

    CPC分类号： H10N30/30 ,  F16F15/007 ,  F16F15/04 ,  H02N2/181 ,  H10N30/04

    摘要： A system for passive damping of mechanical vibrations generated by a vibrating structure supported by a support, including a transducer interposed between the vibrating structure and the support to transform mechanical energy of vibrations into electrical energy. The transducer includes a flextensional structure having a first axis perpendicular to a second axis, a stack of piezoelectric elements adapted to produce electrical energy when stressed, the stack stressed in compression by the flextensional structure along the first axis so that deformation of the structure modifies the compressive stress applied to the stack, two peripheral fasteners are secured to the flextensional structure, each fastener disposed along the second axis, a first fastener for securing the flextensional structure to the vibrating structure, a second fastener for securing the flextensional structure to the support, at least one fastener integrates an elastic suspension, a shunt connected to the piezoelectric stack to dissipate electrical energy.

    Innovative and flexible fixture for poling plan
    4.
    发明授权
    Innovative and flexible fixture for poling plan 有权

    公开(公告)号：US11968900B2

    公开(公告)日：2024-04-23

    申请号：US17109953

    申请日：2020-12-02

    申请人： Xerox Corporation

    发明人： Johann Junginger ,  Simon Burke ,  Sarah Vella

    IPC分类号： H10N30/04 ,  H10N30/08 ,  H01T19/00

    CPC分类号： H10N30/04 ,  H10N30/08 ,  H01T19/00

    摘要： An apparatus 10 for poling piezoelectric material includes a platen 22 which holds a sample 20 of piezoelectric material to be poled and a stage 30 to which the platen is mounted. The stage 30 is arranged to selectively move the platen 22 and thereby the sample 20 which the platen 22 holds. The platen 22 is movable by the stage 30 selectively between a first position and a second position. A corona source 40 generates a corona to which the sample 20 is exposed when the platen 22 is moved to the first position by the stage 30. An electrostatic voltmeter 60 having a probe 62 measures a surface potential of the sample 20 when the platen 22 is moved to the second position by the stage 30.

    Method for tuning the resonant frequency of a piezoelectric micromachined ultrasonic transducer
    5.
    发明授权
    Method for tuning the resonant frequency of a piezoelectric micromachined ultrasonic transducer 有权

    公开(公告)号：US11938515B2

    公开(公告)日：2024-03-26

    申请号：US16957064

    申请日：2018-12-21

    申请人： InvenSense, Inc.

    发明人： Fabian Goericke ,  Stefon Shelton ,  Benedict Costello

    IPC分类号： B06B1/06 ,  H10N30/04

    CPC分类号： B06B1/0629 ,  B06B1/0651 ,  B06B1/0666 ,  B06B1/0685 ,  H10N30/04 ,  Y10T29/42

    摘要： The teachings of the present disclosure enable the manufacture of one or more piezoelectric micromachined ultrasonic transducers (PMUTs) having a resonant frequency of a specific target value and/or substantially matched resonant frequencies. In accordance with the present disclosure, a flexible membrane of a PMUT is modified to impart a desired parameter profile for stiffness and/or mass to tune its resonant frequency to a target value. The desired parameter profile is achieved by locally removing or adding material to regions of one or more layers of the flexible membrane to alter its geometric dimensions and/or density. In some embodiments, material is added or removed non-uniformly across the structural layer to realize a material distribution that more strongly affects membrane stiffness than mass. In some embodiments, material having a specific residual stress is added to, and/or removed from, the membrane to define a desired modal stiffness for the membrane.

    Method for producing a layer by thinning and ion penetration
    9.
    发明授权
    Method for producing a layer by thinning and ion penetration 有权

    公开(公告)号：US11744153B2

    公开(公告)日：2023-08-29

    申请号：US16304063

    申请日：2017-05-24

    申请人： Soitec

    发明人： Bruno Ghyselen

    IPC分类号： H01L41/253 ,  H01L41/187 ,  H01L41/312 ,  H10N30/04 ,  H10N30/072 ,  H10N30/853

    CPC分类号： H10N30/04 ,  H10N30/072 ,  H10N30/8542

    摘要： A method for producing a layer of composition AA′BO3, wherein A consists of at least one element selected from the group consisting of: Li, Na, K, Ca, Mg, Ba, Sr, Pb, La, Bi, Y, Dy, Gd, Tb, Ce, Pr, Nd, Sm, Eu, Ho, Zr, Sc, Ag and Tl, and B consists of at least one element selected from the group consisting of: Nb, Ta, Sb, Ti, Zr, Sn, Ru, Fe, V, Sc, C, Ga, Al, Si, Mn, Zr and Tl, is described. The method includes providing a donor substrate of composition ABO3, forming a layer of composition ABO3 by thinning the donor substrate, and exposing the layer of composition ABO3 to a medium containing ions of an element A′ belonging to the same list of elements as A, A′ being different from A, such that the ions penetrate into the layer of composition ABO3 to form the layer of composition AA′BO3.

    METHOD OF MANUFACTURING A POROUS PRESSURE SENSOR AND DEVICE THEREFOR
    10.
    发明公开
    METHOD OF MANUFACTURING A POROUS PRESSURE SENSOR AND DEVICE THEREFOR 审中-公开

    公开(公告)号：US20230213402A1

    公开(公告)日：2023-07-06

    申请号：US17928007

    申请日：2020-06-02

    申请人： Hermosa Optics Inc.

    发明人： Yen-Chih CHEN

    IPC分类号： G01L9/08 ,  H10N30/076 ,  H10N30/077 ,  H10N30/04

    CPC分类号： G01L9/08 ,  H10N30/076 ,  H10N30/077 ,  H10N30/04

    摘要： A method of manufacturing a porous pressure sensor, comprising: providing a substrate; forming a piezoelectric film on an upper surface of the substrate; performing a porosification process on the piezoelectric film, such as performing a wet etching process or a heat treatment process to form a porous pressure sensing layer; and forming a first electrode and a second electrode on two opposite sides of the upper surface of the porous pressure sensing layer, respectively. The present application is also directed to a pressure sensors manufactured by the method of manufacturing the porous pressure sensor.