利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

56 条记录 (耗时 0.048 秒)

    Software control of transistor body bias in controlling chip parameters
    8.
    发明授权
    Software control of transistor body bias in controlling chip parameters 有权
    控制芯片参数的晶体管体偏置的软件控制

    公开(公告)号：US06484265B2

    公开(公告)日：2002-11-19

    申请号：US09224573

    申请日：1998-12-30

    申请人： Shekhar Y. Borkar ,  Vivek K. De ,  Ali Keshavarzi ,  Siva G. Narendra

    发明人： Shekhar Y. Borkar ,  Vivek K. De ,  Ali Keshavarzi ,  Siva G. Narendra

    IPC分类号： G06F132

    CPC分类号： G06F1/324 ,  G06F1/26 ,  G06F1/32 ,  G06F1/3296 ,  Y02D10/126 ,  Y02D10/172

    摘要： In some embodiments, the invention includes a system having a processor and control circuitry. The control circuitry controls a setting of a body bias signal to control body biases provided in the processor to at least partially control a parameter of the processor, wherein the control circuitry controls the setting responsive to processor signal resulting for execution of software. The control circuitry may further control settings of a supply voltage signal and a clock signal to control the parameter. More than one parameter may be controlled. Examples of the parameters include performance, power consumption, and temperature.

    摘要翻译： 在一些实施例中，本发明包括具有处理器和控制电路的系统。 控制电路控制身体偏置信号的设置以控制处理器中提供的身体偏压，以至少部分地控制处理器的参数，其中控制电路根据处理器信号控制结果，从而执行软件。 控制电路还可以控制电源电压信号和时钟信号的设置以控制参数。 可以控制多个参数。 参数的示例包括性能，功耗和温度。

    Transistor group mismatch detection and reduction
    9.
    发明授权
    Transistor group mismatch detection and reduction 有权
    晶体管组不匹配检测和还原

    公开(公告)号：US06272666B1

    公开(公告)日：2001-08-07

    申请号：US09224574

    申请日：1998-12-30

    申请人： Shekhar Y. Borkar ,  Vivek K. De ,  Ali Keshavarzi ,  Siva G. Narendra

    发明人： Shekhar Y. Borkar ,  Vivek K. De ,  Ali Keshavarzi ,  Siva G. Narendra

    IPC分类号： G06F1750

    CPC分类号： G01R31/2882 ,  G01R31/3016

    摘要： In some embodiments, the invention includes a system having first and second domains. The system includes a first performance detection circuitry including some transistors of the first domain to provide a first performance rating signal indicative of transistor switching rates of the first domain. The system includes second performance detection circuitry including some transistors of the second domain to provide a second performance rating signal indicative of transistor switching rates the second domain. The system further includes control circuitry to receive the first and second performance rating signals and control a setting for a body bias signal for the first domain and control a setting for a body bias signal for the second domain responsive to the performance rating signals. In some embodiments, the control circuitry also provides supply voltage signals and clock signals responsive to the performance signals. The first and second domains may have clock signals with the same frequency and the bias values are set such that the transistors of the first and second domains can switch properly while the first and second domains have the clock signals and wherein one of the first and second domains operates at less than optimal performance.

    摘要翻译： 在一些实施例中，本发明包括具有第一和第二域的系统。 该系统包括第一性能检测电路，其包括第一域的一些晶体管，以提供指示第一域的晶体管切换速率的第一性能评估信号。 该系统包括第二性能检测电路，其包括第二域的一些晶体管，以提供指示第二域的晶体管切换速率的第二性能评估信号。 该系统还包括控制电路，用于接收第一和第二性能评定信号并且控制针对第一域的体偏置信号的设置，并且响应于性能等级信号来控制针对第二域的体偏置信号的设置。 在一些实施例中，控制电路还响应于性能信号提供电源电压信号和时钟信号。 第一和第二域可以具有相同频率的时钟信号，并且偏置值被设置为使得第一和第二域的晶体管可以正确地切换，而第一和第二域具有时钟信号，并且其中第一和第二域中的一个 域以不到最佳性能运行。

    Transistors providing desired threshold voltage and reduced short channel effects with forward body bias
    10.
    发明授权
    Transistors providing desired threshold voltage and reduced short channel effects with forward body bias 失效
    晶体管提供期望的阈值电压和减少的短通道效应与前向偏置

    公开(公告)号：US06232827B1

    公开(公告)日：2001-05-15

    申请号：US09078388

    申请日：1998-05-13

    申请人： Vivek K. De ,  Ali Keshavarzi ,  Siva G. Narendra ,  Shekhar Y. Borkar

    发明人： Vivek K. De ,  Ali Keshavarzi ,  Siva G. Narendra ,  Shekhar Y. Borkar

    IPC分类号： G05F110

    CPC分类号： H01L27/0928 ,  H01L29/1087 ,  H03K19/0948

    摘要： In one embodiment, a semiconductor circuit includes a first group of field effect transistors having a body and parameters including a net channel doping level DL1. The circuit also includes a conductor to provide a first voltage to the body to forward body bias the first group of transistors, the first group of transistors having a forward body bias threshold voltage (VtFBB) when forward body biased, wherein DL1 is at least 25% higher than a net channel doping level in the first group of transistors that would result in a zero body bias threshold voltage equal to VtFBB, with the parameters other than the net channel doping level being unchanged. In another embodiment, the semiconductor circuit includes a first circuit including a first group of field effect transistors having a body. The circuit also includes a first voltage source to provide a first voltage to the body such that the field effect transistors have a forward body bias, the first voltage being at a level leading to the circuit experiencing a reduced rate of soft error failures as compared to when the circuit is not forward biased.

    摘要翻译： 在一个实施例中，半导体电路包括具有主体的第一组场效应晶体管和包括净通道掺杂水平DL1的参数。 该电路还包括导体，用于向主体提供第一电压以使第一组晶体管偏置，第一组晶体管在正向偏置时具有正向偏置阈值电压（VtFBB），其中DL1至少为25 高于第一组晶体管中的净通道掺杂水平，其将导致零体偏置阈值电压等于VtFBB，其中除了净通道掺杂水平之外的参数不变。 在另一实施例中，半导体电路包括第一电路，其包括具有主体的第一组场效应晶体管。 电路还包括第一电压源，以向主体提供第一电压，使得场效应晶体管具有正向体偏置，第一电压处于导致电路经历软错误故障率降低的水平，与 当电路没有正向偏置时。