摘要:
A method of manufacturing low energy-loss waveguide circuit elements in which a film of metal with a low resistivity is joined to a base metal by thermal pressing or electric plating, and a hard male die of a desired shape is pressed into the base metal from above the metal film, whereby a plastic strain is caused in the base metal thereby to form a recessed portion in the base metal having an internal surface covered with the low resistivity metal.
摘要:
A monitoring circuit of the present invention provides a monitor signal with which a magnitude of a current flowing across a photodetector, such as a photodiode, can be calculated accurately over a wide temperature range on the basis of a value of the monitor signal. The monitoring circuit of the present invention includes: a current mirror circuit for outputting a monitor current proportional to an input current, the current mirror circuit having an input point for receiving the input current, the input point being connected to a photodetector and a load resistor, which are connected thereto in parallel; and an output circuit for outputting a monitor signal indicating a difference between a monitor electric potential proportional to the monitor current, and an offset electric potential proportional to an offset current which flows across the load resistor concurrently with the monitor current.
摘要:
In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.
摘要:
A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.
摘要:
A peak voltage detector circuit detects a peak voltage of an input voltage. The input voltage is input into a first input terminal of a comparator. A counter circuit counts up a counter value in synchronization with a first clock signal, when a signal output from the comparator is in a first state. The counter circuit counts down the counter value in synchronization with a second clock signal. A digital-analog conversion circuit outputs an output voltage corresponding to the counter value, and the output voltage is input into a second input terminal of the comparator. The first clock signal has a wave period shorter than that of the second clock signal.
摘要:
An imaging module includes an imaging substrate mounting an imaging device thereon, a resin holder including a substrate securing portion to which the imaging substrate is secured, a lens support barrel supporting a lens at an inside thereof, and a holding portion which protrudes toward a subject from the substrate securing portion and includes a through hole configured to permit retention of the holder in an external structure, a metal securing member disposed at a side of the substrate securing portion of the holder facing a subject, and a metal holding plate including a securing region which is secured to and electrically connected to the securing member, and a holding portion adjacent region which overlaps a part around the through hole of the holding portion and includes a through hole configured to communicate with the through hole.
摘要:
An object of the invention is to provide a thermocouple having a high response speed without receiving mechanical damages such as bending and curving even when it is used in a high-speed fluid. The invention provides a quick-response thermocouple for high-speed fluid in which a sheathed thermocouple having a small outer diameter that is formed by housing, in a metal sheath, a positive-side thermocouple filament and a negative-side thermocouple filament embedded within a powder of an inorganic insulating material, and by forming a temperature sensing point at a tip portion thereof by bonding the tips of the positive-side thermocouple filament and the negative-side thermocouple filament together at the tip portion thereof, is inserted in a protective tube having a large outer diameter so that the tip portion is exposed, in which a portion of the sheathed thermocouple that is exposed from the protective tube is inserted in a protective cylinder having a bottom cover with a hole on a tip side through which the sheathed thermocouple is inserted and having a plurality of through windows, the tip of the sheathed thermocouple is slightly exposed from the bottom cover of the protective cylinder, and the bottom cover of the protective cylinder and the sheathed thermocouple as well as the protective cylinder and a lower portion of the protective tube are welded.
摘要:
A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.
摘要:
An apparatus for transferring a pattern of minute surface structures, using a pair of press members which are located opposingly for movements toward and away from each other. One press member is adapted to support thereon a mold having on a transfer surface a master pattern of minute structures to be transferred, while the other press member is adapted to support thereon an annular substrate plate having a curable resin layer coated thereon and to press the resin layer against the transfer surface of the mold to transfer said minute structures to the resin layer. The mod is provided with a circular center hole defining at least three small-diameter segments and three large-diameter segments alternately and at uniform angular intervals along an inner periphery of the mold. The annular substrate plate has an inside diameter exactly matching with the small-diameter segments at the inner periphery of the mold. A chuck mechanism is provided inside of the lower press member, the chuck mechanism having at least three chuck pawls located in uniformly spaced positions along inner periphery of the substrate plate. The chuck pawls are radially displaceable to take either an operative position or a receded position, and are adapted to grip the inner periphery of the substrate together the small-diameter segments of the center hole of the mold at the time of setting the substrate plate in alignment with the mold, and to grip the inner periphery of said substrate plate alone, at spaced positions from the large-diameter segments of the center hole of the mold, at the time of separating the substrate plate from said mold.