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公开(公告)号:US20070097559A1
公开(公告)日:2007-05-03
申请号:US11637585
申请日:2006-12-12
申请人: Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
发明人: Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
IPC分类号: G11B5/127
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要: A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer is positioned between the specular layer and the sidewall.
摘要翻译: 多层磁阻器件包括位于至少一个侧壁上的镜面层,并且铜层位于镜面层和侧壁之间。
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公开(公告)号:US20050099738A1
公开(公告)日:2005-05-12
申请号:US10702843
申请日:2003-11-06
申请人: Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
发明人: Song Xue , Paul Anderson , Michael Kautzky , Xuefei Tang , Patrick Ryan
CPC分类号: B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要: A transducing head includes a multilayered magnetoresistive sensor having an air bearing sidewall opposite aback sidewall and a first sidewall opposite a second sidewall. A specular layer is positioned on at least one of the air bearing sidewall, the back sidewall, the first sidewall, and the second sidewall. Each sidewall is transverse to the layers of the magnetoresistive sensor.
摘要翻译: 换能头包括多层磁阻传感器,其具有空气轴承侧壁与相邻的侧壁和与第二侧壁相对的第一侧壁。 镜面层位于空气轴承侧壁,后侧壁,第一侧壁和第二侧壁中的至少一个上。 每个侧壁横向于磁阻传感器的层。
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公开(公告)号:US20070058300A1
公开(公告)日:2007-03-15
申请号:US11222624
申请日:2005-09-09
申请人: Song Xue , Paul Anderson , Konstantin Nikolaev , Patrick Ryan
发明人: Song Xue , Paul Anderson , Konstantin Nikolaev , Patrick Ryan
IPC分类号: G11B5/33
CPC分类号: G01R33/093 , B82Y25/00
摘要: A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer.
摘要翻译: 磁阻堆叠包括靠近被钉扎层的自由层,分离层,钉扎层和磁性稳定器,使得磁稳定器增强了钉扎层的磁化方向的稳定性。
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4.
公开(公告)号:US20100117170A1
公开(公告)日:2010-05-13
申请号:US12269537
申请日:2008-11-12
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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5.
公开(公告)号:US08456903B2
公开(公告)日:2013-06-04
申请号:US12904254
申请日:2010-10-14
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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6.
公开(公告)号:US07826181B2
公开(公告)日:2010-11-02
申请号:US12269537
申请日:2008-11-12
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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公开(公告)号:US07969771B2
公开(公告)日:2011-06-28
申请号:US12242620
申请日:2008-09-30
申请人: Haiwen Xi , Michael Xuefei Tang , Yuankai Zheng , Patrick Ryan
发明人: Haiwen Xi , Michael Xuefei Tang , Yuankai Zheng , Patrick Ryan
IPC分类号: G11C11/00
CPC分类号: G11C13/0007 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C2213/15 , G11C2213/32 , G11C2213/34 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1206 , H01L45/1233 , H01L45/144 , H01L45/146
摘要: Various embodiments of the present invention are generally directed to an apparatus and method associated with a semiconductor device with thermally coupled phase change layers. The semiconductor device comprises a first phase change layer selectively configurable in a relatively low resistance crystalline phase and a relatively high resistance amorphous phase, and a second phase change layer thermally coupled to the first phase change layer. The second phase change layer is characterized as a metal-insulator transition material. A programming pulse is applied to the semiconductor device from a first electrode layer to a second electrode layer to provide the first phase change layer with a selected resistance.
摘要翻译: 本发明的各种实施例通常涉及与具有热耦合相变层的半导体器件相关联的装置和方法。 半导体器件包括可选择性地配置在相对低电阻的结晶相和相对高电阻的非晶相中的第一相变层,以及热耦合到第一相变层的第二相变层。 第二相变层的特征在于金属 - 绝缘体过渡材料。 将编程脉冲从第一电极层施加到第二电极层,以向第一相变层提供选定的电阻。
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8.
公开(公告)号:US20110026321A1
公开(公告)日:2011-02-03
申请号:US12904254
申请日:2010-10-14
CPC分类号: H01L43/08 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H01F10/3286 , H01F10/329
摘要: A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer.
摘要翻译: 具有铁磁性钉扎层,铁磁性自由层,其间的非磁性间隔层的磁性元件以及位于自由层和被钉扎层之间的多孔非导电电流限制层。 电流限制层在自由层和非磁性间隔层之间或被钉扎层和非磁性间隔层之间形成界面。
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公开(公告)号:US20060198047A1
公开(公告)日:2006-09-07
申请号:US11069792
申请日:2005-03-01
申请人: Song Xue , Mark Kief , Johannes Ek , Nurul Amin , Olle Heinonen , Kaizhong Gao , Patrick Ryan
发明人: Song Xue , Mark Kief , Johannes Ek , Nurul Amin , Olle Heinonen , Kaizhong Gao , Patrick Ryan
IPC分类号: G11B5/147
CPC分类号: H01F10/3268 , B82Y25/00 , G11B5/265
摘要: The present invention relates to a recording head with a storage medium. The head includes an assist mechanism to assist operation of the head.
摘要翻译: 本发明涉及具有存储介质的记录头。 头部包括辅助机构以辅助头部的操作。
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公开(公告)号:US20060002032A1
公开(公告)日:2006-01-05
申请号:US10880879
申请日:2004-06-30
申请人: Shaoping Li , Song Xue , Kaizhong Gao , Patrick Ryan
发明人: Shaoping Li , Song Xue , Kaizhong Gao , Patrick Ryan
CPC分类号: G11B5/265 , G11B5/127 , G11B5/3954 , G11B5/3974
摘要: A magnetic sensor for reading information from a magnetic medium. The magnetic sensor includes a bottom electrode and a first sensor disposed above the bottom electrode. The magnetic sensor also includes a middle electrode disposed above the first sensor, a second sensor disposed above the middle electrode and a top electrode disposed above the second sensor. The bottom electrode, the middle electrode and the top electrode are utilized to electrically connect the first sensor and the second sensor in parallel.
摘要翻译: 一种用于从磁性介质读取信息的磁传感器。 磁传感器包括底电极和设置在底电极上方的第一传感器。 磁传感器还包括设置在第一传感器上方的中间电极,设置在中间电极上方的第二传感器和设置在第二传感器上方的顶部电极。 底部电极,中间电极和顶部电极用于并联地电连接第一传感器和第二传感器。
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