公开(公告)号：US12044956B2

公开(公告)日：2024-07-23

申请号：US17268288

申请日：2019-07-26

申请人： Sony Corporation

发明人： Hisayoshi Motobayashi ,  Hidekazu Kawanishi ,  Yoshiro Takiguchi ,  Masahiro Murayama ,  Hiroyuki Miyahara ,  Hitoshi Domon

IPC分类号： G03B21/20 ,  H01S5/02218 ,  H01S5/02255 ,  H01S5/02257 ,  H01S5/02315 ,  H01S5/02325 ,  H01S5/0239 ,  H01S5/024 ,  H01S5/323 ,  H01S5/40

CPC分类号： G03B21/2033 ,  G03B21/208 ,  H01S5/02218 ,  H01S5/02255 ,  H01S5/02257 ,  H01S5/02315 ,  H01S5/02325 ,  H01S5/0239 ,  H01S5/02469 ,  H01S5/32341 ,  H01S5/4031 ,  H01S5/4087

摘要： A light-emitting device including: a package including a light-emitting element, a reflection member that reflects light outputted from the light-emitting element, and a sealed space that accommodates the light-emitting element and the reflection member; a base plate on which a plurality of the packages is mounted; and lenses opposed to the base plate with the plurality of packages interposed therebetween, the lenses being opposed to the respective packages.

公开(公告)号：US20180366906A1

公开(公告)日：2018-12-20

申请号：US15739853

申请日：2016-05-11

申请人： Sony Corporation

发明人： Tatsushi Hamaguchi ,  Shoichiro Izumi ,  Yoshiro Takiguchi ,  Noriyuki Futagawa

IPC分类号： H01S5/183 ,  H01S5/028 ,  H01S5/20 ,  H01S5/042

CPC分类号： H01S5/18308 ,  H01S5/028 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/18391 ,  H01S5/2004 ,  H01S5/34333

摘要： A light emitting element includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 made of GaN-based compound semiconductors are stacked, a mode loss acting portion 54 provided on the second compound semiconductor layer 22 and configuring a mode loss acting region 55 that acts upon increase or decrease of oscillation mode loss, a second electrode 32, a second light reflection layer 42, a first light reflection layer 41, and a first electrode 31. A current injection region 51, a current non-injection inner side region 52 that surrounds the current injection region 51 and a current non-injection outer side region 53 that surrounds the current non-injection inner side region 52 are formed on the stacked structure 20, and a projection image of the mode loss acting region 55 and a projection image of the current non-injection outer side region 53 overlap with each other.

公开(公告)号：US10199800B2

公开(公告)日：2019-02-05

申请号：US15739853

申请日：2016-05-11

申请人： Sony Corporation

发明人： Tatsushi Hamaguchi ,  Shoichiro Izumi ,  Yoshiro Takiguchi ,  Noriyuki Futagawa

IPC分类号： H01S5/18 ,  H01S5/183 ,  H01S5/028 ,  H01S5/042 ,  H01S5/20

摘要： A light emitting element includes a stacked structure 20 in which a first compound semiconductor layer 21, an active layer 23 and a second compound semiconductor layer 22 made of GaN-based compound semiconductors are stacked, a mode loss acting portion 54 provided on the second compound semiconductor layer 22 and configuring a mode loss acting region 55 that acts upon increase or decrease of oscillation mode loss, a second electrode 32, a second light reflection layer 42, a first light reflection layer 41, and a first electrode 31. A current injection region 51, a current non-injection inner side region 52 that surrounds the current injection region 51 and a current non-injection outer side region 53 that surrounds the current non-injection inner side region 52 are formed on the stacked structure 20, and a projection image of the mode loss acting region 55 and a projection image of the current non-injection outer side region 53 overlap with each other.