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公开(公告)号：US11411372B2
公开(公告)日：2022-08-09
申请号：US16627174
申请日：2018-04-27
申请人： Sony Corporation
发明人： Tatsushi Hamaguchi , Jugo Mitomo , Susumu Sato , Hiroshi Nakajima , Masamichi Ito , Hidekazu Kawanishi
摘要： A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.
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公开(公告)号：US11309686B2
公开(公告)日：2022-04-19
申请号：US16621807
申请日：2018-04-17
申请人： SONY CORPORATION
发明人： Hiroshi Nakajima , Tatsushi Hamaguchi , Jugo Mitomo , Susumu Sato , Masamichi Ito , Hidekazu Kawanishi
摘要： A surface emitting laser includes: a semiconductor layer containing a nitride semiconductor, and including a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in this order, in which the semiconductor layer includes a light emitting region; and a first light reflecting layer and a second light reflecting layer that are opposed to each other with the semiconductor layer being disposed therebetween. The first semiconductor layer has a high dislocation portion disposed outside the light emitting region. The high dislocation portion has an average dislocation density higher than an average dislocation density of the light emitting region.
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公开(公告)号：US11374384B2
公开(公告)日：2022-06-28
申请号：US16617922
申请日：2018-04-16
申请人： Sony Corporation
发明人： Susumu Sato , Tatsushi Hamaguchi , Jugo Mitomo , Hiroshi Nakajima , Masamichi Ito , Hidekazu Kawanishi
IPC分类号： H01S5/183
摘要： A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.
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公开(公告)号：US10541509B2
公开(公告)日：2020-01-21
申请号：US16069601
申请日：2016-12-15
申请人： SONY CORPORATION
摘要： A semiconductor light emitting device includes a substrate a semiconductor light emitting element that is disposed on the substrate and that emits light along a direction substantially parallel to a main surface of the substrate a wavelength conversion element that is disposed on a light emitting side of the semiconductor light emitting element, that absorbs a portion of the light emitted from the semiconductor light emitting element, and that emits light having a wavelength different from that of the absorbed light; and a holding member that is disposed on the substrate and holds the wavelength conversion element.
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公开(公告)号：US11984533B2
公开(公告)日：2024-05-14
申请号：US17263399
申请日：2019-07-01
申请人： SONY CORPORATION
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/12 , H01L33/58 , H01S5/026 , H01S5/34333
摘要： A light emitting device according to an embodiment of the present disclosure includes: a first layer including Alx2Inx1Ga(1-x1-x2) N (0
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公开(公告)号：US20170294761A1
公开(公告)日：2017-10-12
申请号：US15494737
申请日：2017-04-24
申请人： Sony Corporation
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.
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公开(公告)号：US09660420B2
公开(公告)日：2017-05-23
申请号：US14746216
申请日：2015-06-22
申请人： Sony Corporation
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.
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公开(公告)号：US12044956B2
公开(公告)日：2024-07-23
申请号：US17268288
申请日：2019-07-26
申请人： Sony Corporation
发明人： Hisayoshi Motobayashi , Hidekazu Kawanishi , Yoshiro Takiguchi , Masahiro Murayama , Hiroyuki Miyahara , Hitoshi Domon
IPC分类号： G03B21/20 , H01S5/02218 , H01S5/02255 , H01S5/02257 , H01S5/02315 , H01S5/02325 , H01S5/0239 , H01S5/024 , H01S5/323 , H01S5/40
CPC分类号： G03B21/2033 , G03B21/208 , H01S5/02218 , H01S5/02255 , H01S5/02257 , H01S5/02315 , H01S5/02325 , H01S5/0239 , H01S5/02469 , H01S5/32341 , H01S5/4031 , H01S5/4087
摘要： A light-emitting device including: a package including a light-emitting element, a reflection member that reflects light outputted from the light-emitting element, and a sealed space that accommodates the light-emitting element and the reflection member; a base plate on which a plurality of the packages is mounted; and lenses opposed to the base plate with the plurality of packages interposed therebetween, the lenses being opposed to the respective packages.
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公开(公告)号：US20150295387A1
公开(公告)日：2015-10-15
申请号：US14746216
申请日：2015-06-22
申请人： Sony Corporation
CPC分类号： H01S5/2018 , B82Y20/00 , H01S5/2009 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A laser diode with an improved kink level in the L-I characteristic and capable of obtaining a stable high output in a horizontal transverse mode is provided. The laser diode includes an active layer made of nitride III-V compound semiconductor containing at least gallium (Ga) in 3B-group elements and at least nitrogen (N) in 5B-group elements, an n-type compound semiconductor layer provided on one of faces of the active layer, and a p-type compound semiconductor layer provided on the other face of the active layer. A region closest to the active layer, in the n-type compound semiconductor layer is a high-concentration region whose impurity concentration is higher than that of the other n-type regions.
摘要翻译： 提供了具有改善的L-I特性的扭结电平并且能够以水平横向模式获得稳定的高输出的激光二极管。 激光二极管包括由氮化物III-V化合物半导体制成的有源层，其中至少包含3B族元素中的镓（Ga）和5B族元素中的至少氮（N），一个n型化合物半导体层 的有源层的表面，以及设置在有源层的另一面上的p型化合物半导体层。 在n型化合物半导体层中最靠近有源层的区域是杂质浓度高于其它n型区域的高浓度区域。
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公开(公告)号：US11710942B2
公开(公告)日：2023-07-25
申请号：US16769357
申请日：2018-09-13
申请人： SONY CORPORATION
发明人： Hidekazu Kawanishi , Jugo Mitomo , Kei Satou
IPC分类号： H01S5/40 , H01S5/02 , H01S5/02326 , H01S5/0239 , H01S5/0237 , H01S5/02345 , H01S5/02251 , H01S5/02375 , H01S5/02234 , H01S5/024 , B41J2/455
CPC分类号： H01S5/4031 , B41J2/455 , H01S5/0201 , H01S5/0237 , H01S5/0239 , H01S5/02251 , H01S5/02326 , H01S5/02345 , H01S5/02375 , H01S5/02234 , H01S5/02476
摘要： To provide a method of manufacturing a light-emitting module capable of accurately arranging a plurality of light-emitting elements at narrow intervals, and a light-emitting module manufactured by the method of manufacturing, and, moreover, a device on which the light-emitting module is mounted. Provided is a method of manufacturing a light-emitting module including: a plurality of light-emitting element arrays each including, in a plane parallel to resonator length of a light-emitting element, a plurality of the light-emitting elements arranged along a width direction perpendicular to a direction of the resonator length; and a substrate on which the plurality of light-emitting element arrays is mounted, the method including arranging the plurality of light-emitting elements on the substrate at predetermined intervals along the width direction in the light-emitting module, by causing side surfaces of the respective light-emitting element arrays adjacent to each other along the width direction to be in contact with each other and mounting the respective light-emitting element arrays on the substrate.
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