-
公开(公告)号:US09646945B2
公开(公告)日:2017-05-09
申请号:US14686775
申请日:2015-04-14
申请人: Soon-Bum Kim , Tae-Eun Kim , Eun-Hye Park
发明人: Soon-Bum Kim , Tae-Eun Kim , Eun-Hye Park
CPC分类号: H01L24/13 , H01L24/11 , H01L24/16 , H01L2224/05008 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05567 , H01L2224/05573 , H01L2224/05609 , H01L2224/05613 , H01L2224/05618 , H01L2224/0562 , H01L2224/05623 , H01L2224/05639 , H01L2224/05644 , H01L2224/05649 , H01L2224/05655 , H01L2224/05657 , H01L2224/05664 , H01L2224/05666 , H01L2224/05669 , H01L2224/05671 , H01L2224/05672 , H01L2224/05681 , H01L2224/11003 , H01L2224/1111 , H01L2224/11334 , H01L2224/11849 , H01L2224/13007 , H01L2224/13017 , H01L2224/13021 , H01L2224/13076 , H01L2224/1308 , H01L2224/13083 , H01L2224/13109 , H01L2224/13111 , H01L2224/13113 , H01L2224/13118 , H01L2224/13123 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13149 , H01L2224/13157 , H01L2224/13164 , H01L2224/13166 , H01L2224/13169 , H01L2224/13172 , H01L2224/13181 , H01L2224/13565 , H01L2224/13686 , H01L2224/16058 , H01L2224/16503 , H01L2224/81193 , H01L2224/8181 , H01L2924/014 , H01L2924/00014 , H01L2924/053
摘要: Provided is a semiconductor device having a high-reliability solder joint. The semiconductor device includes a high-temperature solder formed on a conductive pad. A low-temperature solder having a lower melting point than the high-temperature solder is formed on the high-temperature solder. A barrier layer is formed between the high-temperature solder and the low-temperature solder. An Sn content of the high-temperature solder is higher than that of the low-temperature solder.