摘要:
A memory module includes a module circuit board, an amplifier circuit disposed on the module circuit board for amplifying an input signal, and a memory component to store a data item, wherein the memory component is disposed on the module circuit board. The amplifier circuit includes an input to receive a data signal and an output to provide an amplified data signal. The memory component comprises an input to receive the amplified data signal, wherein the data item is stored in the memory component in dependence on a level of the received amplified data signal.
摘要:
A semiconductor memory module includes a wiring board in or on which at least a number of data line runs are conducted in a respective width of k bits and which exhibits a number of memory ranks which in each case have n memory chips, and at least one signal driver/control chip (hub), a k-bit-wide data line run in each case connecting a memory chip from each memory rank to the signal driver/control chip (hub) and four or eight memory ranks in each case being arranged distributed on the top and bottom of the wiring board along the associated data line run in such a manner that, in operation, the load is distributed along the respective data line run.
摘要:
A semiconductor memory module includes a wiring board in or on which at least a number of data line runs are conducted in a respective width of k bits and which exhibits a number of memory ranks which in each case have n memory chips, and at least one signal driver/control chip (hub), a k-bit-wide data line run in each case connecting a memory chip from each memory rank to the signal driver/control chip (hub) and four or eight memory ranks in each case being arranged distributed on the top and bottom of the wiring board along the associated data line run in such a manner that, in operation, the load is distributed along the respective data line run.
摘要:
A system including a central processing unit, a first memory channel being configured to couple the central processing unit to a first semiconductor memory unit, wherein the first memory channel is configured to be clocked with a first clock frequency, and a second memory channel being configured to couple the central processing unit to a second semiconductor memory unit, wherein the second memory channel is configured or configurable to be clocked with a second clock frequency smaller than the first clock frequency.
摘要:
An integrated circuit includes a device stack including: a memory device with a first wireless coupling element, and a semiconductor device with a second wireless coupling element. The first and second wireless coupling elements are arranged face-to-face and are configured to provide a wireless connection between the memory device and the semiconductor device.
摘要:
The invention provides a method and an apparatus for determining a skew of each data bit of an encoded data word received by a receiver via an interface from a transmitter comprising the steps of performing an error check and correction of the received and sampled encoded data word to calculate an error corrected encoded data word corresponding to the encoded data word transmitted by the transmitter, and correlating a sequence of error corrected encoded data words with the sampled encoded data words to determine a skew of each data bit of said received encoded data words.
摘要:
Method and apparatus that relate to a storage device comprising a plurality of memory cells, an interface device configured to connect the storage device to a host system and configured to transmit signals to read and write data from the host system to the memory cells via a first and second data path, and a logic unit. The logic unit is configured to read and write data from the plurality of memory cells via the second data path, and configured to perform logic operations on data stored in the plurality of memory cells. When performing read and write operations, the first data path excludes the logic unit, and the second data path includes the logic unit. Furthermore, the logic unit is communicatively coupled between the interface device and the plurality of memory cells. Additionally, a method for manufacturing the memory device is provided.
摘要:
Stackable circuit devices include mechanical and electrical connection elements that are optionally disengageable and disconnectable. The mechanical connection elements comprise pairs of complementary male and female plug-in engagement elements respectively arranged at opposite matching positions on top and bottom faces of each device package. The male and female plug-in engagement elements provide a mutual plug-in engagement. The electrical connection elements comprise a plurality of first and second complementary contact elements respectively arranged in opposite and matching positions on either the top or bottom face of each device package. When the circuit devices are stacked, the first contact elements are respectively configured to provide an electrical connection to a complementary matching second contact element of an adjacently plugged in circuit device. Some of the stackable circuit devices may accommodate an integrated memory die or chip and others of the stackable circuit devices may include line routing and distribution blocks.
摘要:
A memory control unit for controlling a memory module comprising a plurality of memory cells, said memory control unit comprising means for detecting failure of at least one memory cell, means for deactivating said at least one defective memory cell, means for assigning the address of said at least one defective memory cell to at least one replacement memory cell, first tracking means for tracking the remaining replacement memory cells and masking means to hide the address of a defective memory cell to prevent further usage of this address instead of assigning said address to a replacement memory cell.
摘要:
An integrated circuit includes: a terminal for outputting data, a driver for providing the data to the terminal, and a switch for selectively connecting/disconnecting the driver to the terminal. The disconnection of the driver reduces the capacitive load on the connection between the terminal and driver, thus reducing limitations on data rate from factors such as data reflections that reduce signal quality. Selective connection/disconnection allows the driver to be reconnected to the terminal only when needed.