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    Semiconductor device with partial passivation layer
    4.
    发明授权
    Semiconductor device with partial passivation layer 有权
    具有部分钝化层的半导体器件

    公开(公告)号：US06313538B1

    公开(公告)日：2001-11-06

    申请号：US09489479

    申请日：2000-01-21

    申请人： Christian Zistl ,  Paul R. Besser ,  Eric M. Apelgren ,  Nicholas J. Kepler ,  Srikanteswara Dakshina-Murthy

    发明人： Christian Zistl ,  Paul R. Besser ,  Eric M. Apelgren ,  Nicholas J. Kepler ,  Srikanteswara Dakshina-Murthy

    IPC分类号： H01L2348

    CPC分类号： H01L23/5329 ,  H01L21/76801 ,  H01L21/76834 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor device includes a first dielectric layer, a plurality of conductive interconnections formed in the first dielectric layer, a patterned passivation layer formed above the conductive interconnections, and a second dielectric layer formed above and in contact with the passivation layer and the first dielectric layer. A method for forming a semiconductor device includes providing a base layer, forming a first dielectric layer over the base layer, forming a plurality of conductive interconnections in the first dielectric layer, forming a patterned passivation layer above the conductive interconnections, and forming a second dielectric layer above and in contact with the passivation layer and the first dielectric layer.

    摘要翻译： 半导体器件包括第一电介质层，形成在第一电介质层中的多个导电互连，形成在导电互连之上的图案化钝化层，以及形成在钝化层和第一介电层上方并与钝化层接触的第二介电层 。 一种用于形成半导体器件的方法包括提供基底层，在基底层上形成第一介电层，在第一介电层中形成多个导电互连，在导电互连之上形成图案化的钝化层，以及形成第二电介质 并且与钝化层和第一介电层接触。

    Method of making metal gate stack with etch endpoint tracer layer
    5.
    发明授权
    Method of making metal gate stack with etch endpoint tracer layer 有权
    用蚀刻终点示踪层制作金属栅极叠层的方法

    公开(公告)号：US06589858B1

    公开(公告)日：2003-07-08

    申请号：US10163534

    申请日：2002-06-07

    申请人： Srikanteswara Dakshina-Murthy ,  Paul R. Besser

    发明人： Srikanteswara Dakshina-Murthy ,  Paul R. Besser

    IPC分类号： H01L213205

    CPC分类号： H01L21/32136 ,  Y10S438/97

    摘要： A metal gate structure and method of making the same provides a tracer layer over a first metal or metal compound layer. When etching a metal gate, formed of tungsten, for example, with a first etchant chemistry optimized for etching tungsten, detection of the tracer layer through optical emission spectroscopy, for example, indicates the imminent clearing of the tungsten. A second etchant chemistry is then employed that is selective to the first metal or metal compound layer, such as TiN, overlying the gate dielectric. This provides a controlled etching of the TiN and thereby prevents degradation of the underlying gate dielectric material.

    摘要翻译： 金属栅结构及其制造方法在第一金属或金属化合物层上提供示踪层。 当例如用钨蚀刻金属栅极时，例如，用蚀刻钨优化的第一蚀刻剂化学品，例如通过光学发射光谱法检测示踪剂层，表明钨的即将清除。 然后使用对覆盖栅极电介质的第一金属或金属化合物层（例如TiN）具有选择性的第二蚀刻剂化学。 这提供了对TiN的受控蚀刻，从而防止下面的栅介质材料的劣化。

    Metal gate stack with etch stop layer
    6.
    发明授权
    Metal gate stack with etch stop layer 失效

    公开(公告)号：US06511911B1

    公开(公告)日：2003-01-28

    申请号：US09824218

    申请日：2001-04-03

    申请人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

    发明人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

    IPC分类号： H01L2144

    CPC分类号： H01L21/28088 ,  H01L29/4966

    摘要： A metal gate structure and method of forming the same employs an etch stop layer between a first metal layer, made of TiN, for example, and the metal gate formed of tungsten. The etch stop layer prevents overetching of the TiN during the etching of the tungsten in the formation of the metal gate. The prevention of the overetching of the TiN protects the gate oxide from undesirable degradation. The provision of aluminum or tantalum in the etch stop layer allows a thin etch stop layer to be used that provides adequate etch stopping capability and does not undesirably affect the work function of the TiN.

    Metal gate stack with etch stop layer having implanted metal species
    7.
    发明授权
    Metal gate stack with etch stop layer having implanted metal species 有权
    具有蚀刻停止层的具有植入金属物质的金属栅极叠层

    公开(公告)号：US06444513B1

    公开(公告)日：2002-09-03

    申请号：US09810348

    申请日：2001-03-19

    申请人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

    发明人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

    IPC分类号： H01L218238

    CPC分类号： H01L29/4966 ,  H01L21/28088 ,  Y10S438/947 ,  Y10S438/949

    摘要： A metal gate structure and method of forming the same introduces metal impurities into a first metal layer, made of TiN, for example. The impurities create a surface region of greater etch selectivity that prevents overetching of the TiN during the etching of an overlying tungsten gate during the formation of the metal gate structure. The prevention of the overetching of the TiN protects the gate oxide from undesirable degradation. The provision of aluminum or tantalum as the metal impurities provides adequate etch stopping capability and does not undesirably affect the work function of the TiN.

    摘要翻译： 金属栅结构及其形成方法将金属杂质引入例如由TiN制成的第一金属层中。 这些杂质产生更大的蚀刻选择性的表面区域，其防止了在形成金属栅极结构期间在覆盖钨栅的蚀刻过程中TiN的过蚀刻。 防止TiN的过蚀刻保护栅极氧化物免受不希望的退化。 提供铝或钽作为金属杂质提供了足够的蚀刻停止能力，并且不会不希望地影响TiN的功函数。

    Metal gate stack with etch stop layer
    8.
    发明授权
    Metal gate stack with etch stop layer 有权
    具有蚀刻停止层的金属栅极叠层

    公开(公告)号：US06664604B1

    公开(公告)日：2003-12-16

    申请号：US10273306

    申请日：2002-10-18

    申请人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

    发明人： Paul R. Besser ,  Srikanteswara Dakshina-Murthy

    IPC分类号： H01L2144

    CPC分类号： H01L21/28088 ,  H01L29/4966

    摘要： A metal gate structure and method of forming the same employs an etch stop layer between a first metal layer, made of TiN, for example, and the metal gate formed of tungsten. The etch stop layer prevents overetching of the TiN during the etching of the tungsten in the formation of the metal gate. The prevention of the overetching of the TiN protects the gate oxide from undesirable degradation. The provision of aluminum or tantalum in the etch stop layer allows a thin etch stop layer to be used that provides adequate etch stopping capability and does not undesirably affect the work function of the TiN.

    摘要翻译： 金属栅极结构及其形成方法采用例如由TiN制成的第一金属层和由钨形成的金属栅之间的蚀刻停止层。 蚀刻停止层防止在形成金属栅极期间钨蚀刻期间TiN的过蚀刻。 防止TiN的过蚀刻保护栅极氧化物免受不希望的退化。 在蚀刻停止层中提供铝或钽允许使用薄的蚀刻停止层，其提供足够的蚀刻停止能力并且不会不期望地影响TiN的功函数。

    Systems and methods that control liquid temperature in immersion lithography to maintain temperature gradient to reduce turbulence
    10.
    发明授权
    Systems and methods that control liquid temperature in immersion lithography to maintain temperature gradient to reduce turbulence 有权
    控制浸没式光刻液温度以保持温度梯度以减少湍流的系统和方法

    公开(公告)号：US08547521B1

    公开(公告)日：2013-10-01

    申请号：US11000653

    申请日：2004-12-01

    申请人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    发明人： Srikanteswara Dakshina-Murthy ,  Bhanwar Singh ,  Ramkumar Subramanian

    IPC分类号： G03B27/42 ,  G03B27/52 ,  G03B27/54

    CPC分类号： G03F7/70891 ,  G03F7/70341

    摘要： The subject invention provides systems and methods that monitor and/or control turbulence of an immersion medium. The systems and methods relate to computer controlled techniques that reduce effects of immersion medium flow due to a liquid temperature gradient. According to an aspect of the subject invention, a number of temperature measurements of the immersion medium are obtained, and the temperature measurements are utilized to generate a gradient map of the immersion medium. By way of illustration, the temperature measurements can be made via wireless temperature sensors. The gradient map can be utilized to understand the stability of the immersion medium. According to an aspect of the subject invention, instability identified with the gradient map can be mitigated.

    摘要翻译： 本发明提供了监测和/或控制浸没介质的湍流的系统和方法。 这些系统和方法涉及由于液体温度梯度而降低浸没介质流动影响的计算机控制技术。 根据本发明的一个方面，获得浸渍介质的多个温度测量值，并利用温度测量值来产生浸渍介质的梯度图。 作为说明，可以通过无线温度传感器进行温度测量。 梯度图可用于了解浸没介质的稳定性。 根据本发明的一个方面，可以减轻用梯度图识别的不稳定性。