公开(公告)号：US07619309B2

公开(公告)日：2009-11-17

申请号：US11350518

申请日：2006-02-09

申请人： Stefan Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Kôrner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

发明人： Stefan Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Kôrner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/4763

CPC分类号： H01L24/05 ,  H01L23/53228 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/45099

摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

摘要翻译： 提供一种具有至少部分或全部布置在电绝缘层的切口中的外部导电结构的连接装置。 内导电结构设置在绝缘层一侧的切口的底部。 内部导电结构在接触区域中邻接外部导电结构。 接触区域设置在切口的另一侧的外部导电结构。 接触区域和接触区域不重叠。 切口的底部布置成与接触区域的至少一半重叠，以在接触区域和内部导电结构之间的主电流路径外侧的切口的边缘处的绝缘层中提供台阶。

公开(公告)号：US07964494B2

公开(公告)日：2011-06-21

申请号：US12562475

申请日：2009-09-18

申请人： Stefan Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

发明人： Stefan Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

IPC分类号： H01L21/4763

CPC分类号： H01L24/05 ,  H01L23/53228 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/45099

摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

摘要翻译： 提供一种具有至少部分或全部布置在电绝缘层的切口中的外部导电结构的连接装置。 内导电结构设置在绝缘层一侧的切口的底部。 内部导电结构在接触区域中邻接外部导电结构。 接触区域设置在切口的另一侧的外部导电结构。 接触区域和接触区域不重叠。 切口的底部布置成与接触区域的至少一半重叠，以在接触区域和内部导电结构之间的主电流路径外侧的切口的边缘处的绝缘层中提供台阶。

公开(公告)号：US20060192289A1

公开(公告)日：2006-08-31

申请号：US11350518

申请日：2006-02-09

申请人： Stefan Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Korner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

发明人： Stefan Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Korner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

IPC分类号： H01L23/52

CPC分类号： H01L24/05 ,  H01L23/53228 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/45099

摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

公开(公告)号：US20100007027A1

公开(公告)日：2010-01-14

申请号：US12562475

申请日：2009-09-18

申请人： Stephen Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

发明人： Stephen Drexl ,  Thomas Goebel ,  Johann Helneder ,  Martina Hommel ,  Wolfgang Klein ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck

IPC分类号： H01L23/528

CPC分类号： H01L24/05 ,  H01L23/53228 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/48463 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/45099

摘要： A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

摘要翻译： 提供一种具有至少部分或全部布置在电绝缘层的切口中的外部导电结构的连接装置。 内导电结构设置在绝缘层一侧的切口的底部。 内部导电结构在接触区域中邻接外部导电结构。 接触区域设置在切口的另一侧的外部导电结构。 接触区域和接触区域不重叠。 切口的底部布置成与接触区域的至少一半重叠，以在接触区域和内部导电结构之间的主电流路径外侧的切口的边缘处的绝缘层中提供台阶。

公开(公告)号：US09269669B2

公开(公告)日：2016-02-23

申请号：US13402890

申请日：2012-02-23

申请人： Johann Helneder ,  Markus Schwerd ,  Thomas Goebel ,  Andrea Mitchell ,  Heinrich Koerner ,  Martina Hommel

发明人： Johann Helneder ,  Markus Schwerd ,  Thomas Goebel ,  Andrea Mitchell ,  Heinrich Koerner ,  Martina Hommel

IPC分类号： C23C14/00 ,  H01L23/532 ,  C23C14/22 ,  C23C16/44 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L23/53238 ,  C23C14/22 ,  C23C16/44 ,  H01L21/76834 ,  H01L21/76888 ,  H01L23/5228 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal layer is formed across the surface of the exposed metal strip conductors. The metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.

公开(公告)号：US20120149168A1

公开(公告)日：2012-06-14

申请号：US13402890

申请日：2012-02-23

申请人： Johann Helneder ,  Markus Schwerd ,  Thomas Goebel ,  Andrea Mitchell ,  Heinrich Koerner ,  Martina Hommel

发明人： Johann Helneder ,  Markus Schwerd ,  Thomas Goebel ,  Andrea Mitchell ,  Heinrich Koerner ,  Martina Hommel

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L23/53238 ,  C23C14/22 ,  C23C16/44 ,  H01L21/76834 ,  H01L21/76888 ,  H01L23/5228 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal layer is formed across the surface of the exposed metal strip conductors. The metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.

摘要翻译： 可以在基板上形成多功能电介质层，特别是在基板上的露出的金属带状导体系上。 在暴露的金属带状导体的表面上形成另外的金属层。 然后将金属层至少部分地转变成不导电的金属氧化物，介电层。

公开(公告)号：US20060222760A1

公开(公告)日：2006-10-05

申请号：US11386075

申请日：2006-03-21

申请人： Johann Helneder ,  Markus Schwerd ,  Thomas Goebel ,  Andrea Mitchell ,  Heinrich Koerner ,  Martina Hommel

发明人： Johann Helneder ,  Markus Schwerd ,  Thomas Goebel ,  Andrea Mitchell ,  Heinrich Koerner ,  Martina Hommel

IPC分类号： C23C26/00 ,  C25D9/00 ,  B29C71/04

CPC分类号： H01L23/53238 ,  C23C14/22 ,  C23C16/44 ,  H01L21/76834 ,  H01L21/76888 ,  H01L23/5228 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal layer is formed across the surface of the exposed metal strip conductors. The metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.

摘要翻译： 可以在基板上形成多功能电介质层，特别是在基板上的露出的金属带状导体系上。 在暴露的金属带状导体的表面上形成另外的金属层。 然后将金属层至少部分地转变成不导电的金属氧化物，介电层。

公开(公告)号：US08367514B2

公开(公告)日：2013-02-05

申请号：US12696811

申请日：2010-01-29

申请人： Thomas Goebel ,  Johann Helneder ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck ,  Holger Torwesten

发明人： Thomas Goebel ,  Johann Helneder ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck ,  Holger Torwesten

IPC分类号： H01L21/302

CPC分类号： H01L28/40 ,  H01L21/31687 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0802 ,  H01L27/0805 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

摘要翻译： 提出了一种集成电路和制造方法。 集成电路包括在基极和覆盖电极之间包含基极，覆盖电极和电介质的电容器。 电介质包含可以通过阳极氧化产生的基极中包含的材料的氧化物。 电介质的外围边缘被覆盖电极覆盖。 电容器上的基极层包括与电介质相邻的切口。 在制造过程中，基层保护待化学物质被阳极氧化的基底材料，并且保护周围区域免受阳极氧化。 可以与电容器同时制造精密电阻器。

公开(公告)号：US07692266B2

公开(公告)日：2010-04-06

申请号：US11368254

申请日：2006-03-03

申请人： Thomas Goebel ,  Johann Helneder ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck ,  Holger Torwesten

发明人： Thomas Goebel ,  Johann Helneder ,  Heinrich Körner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck ,  Holger Torwesten

IPC分类号： H01L29/43

CPC分类号： H01L28/40 ,  H01L21/31687 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0802 ,  H01L27/0805 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.

摘要翻译： 提出了一种集成电路和制造方法。 集成电路包括在基极和覆盖电极之间包含基极，覆盖电极和电介质的电容器。 电介质包含可以通过阳极氧化产生的基极中包含的材料的氧化物。 电介质的外围边缘被覆盖电极覆盖。 电容器上的基极层包括与电介质相邻的切口。 在制造过程中，基层保护待化学物质被阳极氧化的基底材料，并且保护周围区域免受阳极氧化。 可以与电容器同时制造精密电阻器。

公开(公告)号：US20060214265A1

公开(公告)日：2006-09-28

申请号：US11368254

申请日：2006-03-03

申请人： Thomas Goebel ,  Johann Helneder ,  Heinrich Korner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck ,  Holger Torwesten

发明人： Thomas Goebel ,  Johann Helneder ,  Heinrich Korner ,  Andrea Mitchell ,  Markus Schwerd ,  Martin Seck ,  Holger Torwesten

IPC分类号： H01L29/00

CPC分类号： H01L28/40 ,  H01L21/31687 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/016 ,  H01L27/0802 ,  H01L27/0805 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor.