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    Semiconductor device with improved robustness
    3.
    发明授权
    Semiconductor device with improved robustness 有权
    半导体器件具有改进的鲁棒性

    公开(公告)号：US08884360B2

    公开(公告)日：2014-11-11

    申请号：US13404161

    申请日：2012-02-24

    申请人： Ralf Siemieniec ,  Oliver Blank ,  Anton Mauder ,  Franz Hirler

    发明人： Ralf Siemieniec ,  Oliver Blank ,  Anton Mauder ,  Franz Hirler

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

    摘要： A semiconductor device includes a first contact in low Ohmic contact with a source region of the device and a first portion of a body region of the device formed in an active area of the device, and a second contact in low Ohmic contact with a second portion of the body region formed in a peripheral area of the device. The minimum width of the second contact at a first surface of the device is larger than the minimum width of the first contact at the first surface so that maximum current density during commutating the semiconductor device is reduced and thus the risk of device damage during hard commutating is also reduced.

    摘要翻译： 半导体器件包括与器件的源极区域的低欧姆接触的第一接触和形成在器件的有源区域中的器件的体区的第一部分，以及与第二部分的低欧姆接触的第二接触 形成在装置的周边区域中的身体区域。 器件第一表面处的第二触点的最小宽度大于第一表面处的第一接触的最小宽度，使得在半导体器件的整流期间的最大电流密度降低，并且因此在硬整流期间器件损坏的风险 也减少了。

    Semiconductor Device With Improved Robustness
    4.
    发明申请
    Semiconductor Device With Improved Robustness 有权
    具有提高鲁棒性的半导体器件

    公开(公告)号：US20130221427A1

    公开(公告)日：2013-08-29

    申请号：US13404161

    申请日：2012-02-24

    申请人： Ralf Siemieniec ,  Oliver Blank ,  Anton Mauder ,  Franz Hirler

    发明人： Ralf Siemieniec ,  Oliver Blank ,  Anton Mauder ,  Franz Hirler

    IPC分类号： H01L29/78 ,  H01L21/04

    CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

    摘要： A semiconductor device includes a first contact in low Ohmic contact with a source region of the device and a first portion of a body region of the device formed in an active area of the device, and a second contact in low Ohmic contact with a second portion of the body region formed in a peripheral area of the device. The minimum width of the second contact at a first surface of the device is larger than the minimum width of the first contact at the first surface so that maximum current density during commutating the semiconductor device is reduced and thus the risk of device damage during hard commutating is also reduced.

    摘要翻译： 半导体器件包括与器件的源极区域的低欧姆接触的第一接触和形成在器件的有源区域中的器件的体区的第一部分，以及与第二部分的低欧姆接触的第二接触 形成在装置的周边区域中的身体区域。 器件第一表面处的第二触点的最小宽度大于第一表面处的第一接触的最小宽度，使得在半导体器件的整流期间的最大电流密度降低，并且因此在硬整流期间器件损坏的风险 也减少了。

    Method for producing a semiconductor component
    9.
    发明授权
    Method for producing a semiconductor component 有权
    半导体部件的制造方法

    公开(公告)号：US07615847B2

    公开(公告)日：2009-11-10

    申请号：US11690494

    申请日：2007-03-23

    申请人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

    发明人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

    IPC分类号： H01L29/861

    CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

    摘要： A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

    摘要翻译： 一种半导体元件，具有半导体本体，该半导体本体具有第一导电类型的第一和第二半导体区域以及与第一导电类型互补的第二导电类型的第三半导体区域。 第二半导体区域布置在第一和第三半导体区域之间并与第一半导体区域一起形成第一结区域，并与第三半导体区域一起形成第二结区域。 在第二半导体区域中，掺杂剂浓度低于第一半导体区域中的掺杂剂浓度。 沿着第一和第三半导体区域之间的直连接线的第二半导体区域中的掺杂剂浓度是不均匀的，并且在第一和第二结区域之间具有至少一个最小值，其中最小值距离第一和第二接合区域 。

    SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
    10.
    发明申请
    SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT 有权
    半导体元件和半导体元件的制造方法

    公开(公告)号：US20080230833A1

    公开(公告)日：2008-09-25

    申请号：US11690494

    申请日：2007-03-23

    申请人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

    发明人： Markus Zundel ,  Franz Hirler ,  Ralf Siemieniec

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7809 ,  H01L29/7813

    摘要： A semiconductor component having a semiconductor body having first and second semiconductor regions of a first conduction type, and a third semiconductor region of a second conduction type, which is complementary to the first conduction type. The second semiconductor region is arranged between the first and third semiconductor region and together with the first semiconductor region forms a first junction region and together with the third semiconductor region forms a second junction region. In the second semiconductor region the dopant concentration is lower than the dopant concentration in the first semiconductor region. The dopant concentration in the second semiconductor region along a straight connecting line between the first and third semiconductor regions is inhomogeneous and has at least one minimum between the first and second junction regions, wherein the minimum is at a distance from the first and second junction regions.

    摘要翻译： 一种半导体元件，具有半导体本体，该半导体本体具有第一导电类型的第一和第二半导体区域以及与第一导电类型互补的第二导电类型的第三半导体区域。 第二半导体区域布置在第一和第三半导体区域之间并与第一半导体区域一起形成第一结区域，并与第三半导体区域一起形成第二结区域。 在第二半导体区域中，掺杂剂浓度低于第一半导体区域中的掺杂剂浓度。 沿着第一和第三半导体区域之间的直连接线的第二半导体区域中的掺杂剂浓度是不均匀的，并且在第一和第二结区域之间具有至少一个最小值，其中最小值距离第一和第二接合区域 。