摘要:
Systems and methods for determining two or more characteristics of a wafer are provided. The two or more characteristics include a characteristic of the wafer that is spatially localized in at least one dimension and a characteristic of the wafer that is not spatially localized in two dimensions.
摘要:
Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a non-spatially localized characteristic of the wafer determined using output responsive to light scattered from the wafer generated by an inspection system and a spatially localized characteristic of the wafer determined using the output.
摘要:
A polarizing device may be used with sample inspection system having one or more collection systems that receive scattered radiation from a region on a sample surface and direct it to a detector. The polarizing device disposed between the collection system(s) and the detector. The polarizing device may include a plurality of polarizing sections. The sections may be characterized by different polarization characteristics. The polarizing device is configured to transmit scattered radiation from defects to the detector and to block noise from background sources that do not share characteristics with scattered radiation from the defects from reaching the detector while, maximizing a capture rate for the defects the detector at a less than optimal signal-to-noise ratio.
摘要:
Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to simultaneously form multiple illumination areas on the wafer with substantially no illumination flux between each of the areas. The system also includes a scanning subsystem configured to scan the multiple illumination areas across the wafer. In addition, the system includes a collection subsystem configured to simultaneously and separately image light scattered from each of the areas onto two or more sensors. Characteristics of the two or more sensors are selected such that the scattered light is not imaged into gaps between the two or more sensors. The two or more sensors generate output responsive to the scattered light. The system further includes a computer subsystem configured to detect defects on the wafer using the output of the two or more sensors.
摘要:
Disclosed herein is a PhotoMultiplier Tube (PMT) designed for use with a surface inspection system such as the Surfscan system, which operates at 266 nm wavelength. The inventive PMT is high efficiency, low noise, and low gain, a combination of features that is specific to the application and contrary to the features of PMT's in the art. The inventive PMT is designed to be tuned to a specific narrow band wavelength of incident light, thereby optimizing the QE at that wavelength. It is further designed to combine a small number of dynodes each having substantially higher secondary electron gain than typical dynodes. By designing the PMT in this way, the excess noise factor is dramatically reduced, yielding a much improved S/N, while still maintaining the overall PMT gain in the lower range suitable for use in a surface inspection system.
摘要:
A polarizing device may be used with sample inspection system having one or more collection systems that receive scattered radiation from a region on a sample surface and direct it to a detector. The polarizing device disposed between the collection system(s) and the detector. The polarizing device may include a plurality of polarizing sections. The sections may be characterized by different polarization characteristics. The polarizing device is configured to transmit scattered radiation from defects to the detector and to block noise from background sources that do not share characteristics with scattered radiation from the defects from reaching the detector while maximizing a capture rate for the defects the detector at a less than optimal signal-to-noise ratio.
摘要:
An inspection system may include, but is not limited to: an illumination subsystem for directing light to an inspection specimen comprising: a power attenuator subsystem configured for altering the power level of a light beam emitted by the illumination subsystem; and a power attenuation control subsystem configured to provide control signals to the power attenuator subsystem according to a detected level of light scattering by the inspection specimen upon illumination by the illumination subsystem. A method for scatterometry inspection may include, but is not limited to: directing light having a power level to an inspection specimen from a light source; detecting light scattered from the specimen; and modifying a power level of one or more intermediate light beams within the light source according to a level of light scattering by the specimen upon illumination by the light source.
摘要:
Systems and methods for determining two or more characteristics of a wafer are provided. The two or more characteristics include a characteristic of the wafer that is spatially localized in at least one dimension and a characteristic of the wafer that is not spatially localized in two dimensions.
摘要:
Computer-implemented methods for inspecting and/or classifying a wafer are provided. One computer-implemented includes detecting defects on a wafer using one or more defect detection parameters, which are determined based on a non-spatially localized characteristic of the wafer that is determined using output responsive to light scattered from the wafer generated by an inspection system. Another computer-implemented method includes classifying a wafer based on a combination of a non-spatially localized characteristic of the wafer determined using output responsive to light scattered from the wafer generated by an inspection system and a spatially localized characteristic of the wafer determined using the output.