公开(公告)号：US20060110937A1

公开(公告)日：2006-05-25

申请号：US11324479

申请日：2006-01-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Newmayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

公开(公告)号：US20050245096A1

公开(公告)日：2005-11-03

申请号：US10838849

申请日：2004-05-03

申请人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

发明人： Stephen Gates ,  Alfred Grill ,  David Medeiros ,  Deborah Neumayer ,  Son Nguyen ,  Vishnubhai Patel ,  Xinhui Wang

IPC分类号： C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US07312524B2

公开(公告)日：2007-12-25

申请号：US11324479

申请日：2006-01-03

申请人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Newmayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

发明人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Newmayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

IPC分类号： H01L23/12 ,  H01L23/053

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种在使用等离子体增强化学气相沉积（“PECVD”）工艺的平行板化学气相沉积工艺中制造包括Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US07049247B2

公开(公告)日：2006-05-23

申请号：US10838849

申请日：2004-05-03

申请人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Neumayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

发明人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Neumayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US09144089B2

公开(公告)日：2015-09-22

申请号：US13574323

申请日：2011-04-15

申请人： Jing Li ,  Xinhui Wang ,  Changwei Ke

发明人： Jing Li ,  Xinhui Wang ,  Changwei Ke

IPC分类号： H04W4/00 ,  H04J3/00 ,  H04W74/08

CPC分类号： H04W74/0833

摘要： The present invention provides an access method and a system for a Machine-Type Communication (MTC) device, and an MTC device. The method comprises the steps of: an MTC device sending, when performing channel request, a channel request cause value and a random reference value to a Base Station Subsystem (BSS) (100), and the BSS sending the received channel request cause value and random reference value back to the MTC device when completing channel allocation (101). The present invention distinguishes the MTC services from other non-MTC services through the channel request cause value, that is, when the cause values are different, the collision will not occur even if the random reference values are the same, thus reducing the probability of the random reference value collision, implementing the effective management for access operations of large numbers of MTC devices, and avoiding the influence of random reference value collision on the normal implementation of original services.

摘要翻译： 本发明提供了一种用于机器类型通信（MTC）设备和MTC设备的访问方法和系统。 所述方法包括以下步骤：MTC设备在向基站子系统（BSS）（100）发送信道请求原因值和随机参考值时，发送所述接收的信道请求导致值，并且 随机参考值在完成信道分配时返回给MTC设备（101）。 本发明通过信道请求原因值来区分MTC服务与其他非MTC服务，即当原因值不同时，即使随机参考值相同也不会发生冲突，从而降低了 随机参考值碰撞，实现大量MTC设备接入操作的有效管理，避免随机参考值碰撞对原始业务正常实现的影响。

公开(公告)号：US08335540B2

公开(公告)日：2012-12-18

申请号：US13222375

申请日：2011-08-31

申请人： Xinhui Wang

发明人： Xinhui Wang

IPC分类号： H04B1/38

CPC分类号： H04W88/08 ,  H04W92/045 ,  H04W92/14 ,  H04W92/20 ,  H04W92/22

摘要： The present invention discloses an enhanced base station, which includes a Um interface functional module (1), a base station functional module (2), a controller functional module (3), and an A interface functional module (4), wherein the Um interface functional module (1), the base station functional module (2) and the A interface functional module (4) carry out the function of a BTS, and the controller functional module (3) and the A interface functional module (4) carry out the function of a BSC. The present invention also provides a method and a GSM system for realizing a flat mobile communication, wherein the enhanced base station carries out the functions of a BTS and a BSC in a conventional GSM system. Application of the present invention can decrease the number of devices for constituting the GSM system and the number of forwarding devices between a calling MS and a called MS, therefore reduce the time for service data transmission and improve the reliability of the transmission.

摘要翻译： 本发明公开了一种增强型基站，包括Um接口功能模块（1），基站功能模块（2），控制器功能模块（3）和A接口功能模块（4），其中Um 接口功能模块（1），基站功能模块（2）和A接口功能模块（4）执行BTS的功能，控制器功能模块（3）和A接口功能模块（4）携带 了解BSC的功能。 本发明还提供了一种用于实现平坦移动通信的方法和GSM系统，其中增强型基站在常规GSM系统中执行BTS和BSC的功能。 本发明的应用可以减少用于构成GSM系统的设备数量和呼叫MS与被叫MS之间的转发设备的数量，从而减少业务数据传输的时间并提高传输的可靠性。

公开(公告)号：US20120250566A1

公开(公告)日：2012-10-04

申请号：US13516086

申请日：2009-12-16

申请人： Xinhui Wang ,  Zhendong Kuang ,  Shen Tian

发明人： Xinhui Wang ,  Zhendong Kuang ,  Shen Tian

IPC分类号： H04W24/10

CPC分类号： H04W8/22 ,  H04W24/08 ,  H04W24/10 ,  H04W28/18

摘要： A method for acquiring support capability of a mobile terminal by a base station side system is disclosed in the present disclosure, and the method includes: the base station side system applies a co-frequency interference to the mobile terminal, and detects a measurement report which is fed back by the mobile terminal after the co-frequency interference is applied, and determines and acquires the support capability of the mobile terminal for voice services over adaptive multi-user channels on one slot according to associated parameters in the detected measurement report in combination with associated threshold values. A system for acquiring support capability of the mobile terminal by the base station side system is also disclosed in the present disclosure. In the system, a base station side determining unit is configured to determine and acquire the support capability of the mobile terminal for voice services over adaptive multi-user channels on one slot according to associated parameters in detected measurement report in combination with associated threshold values. With the method and system in the present disclosure, the base station side system can adaptively and accurately acquire the support capability of the mobile terminal for Voice services over adaptive multi-user channels on one slot.

摘要翻译： 在本公开中公开了一种用于在基站侧系统中获取移动终端的支持能力的方法，该方法包括：基站侧系统向移动终端应用同频干扰，并检测出 在应用同频干扰之后由移动终端反馈，并根据检测到的测量报告中的相关参数在一个时隙上确定并获取用于语音业务的自适应多用户信道上的语音业务的支持能力 具有关联的阈值。 在本公开中还公开了一种用于由基站侧系统获取移动终端的支持能力的系统。 在该系统中，基站侧确定单元被配置为根据检测到的测量报告中的相关参数以及相关联的阈值，在一个时隙上确定并获取用于语音服务的移动终端的自适应多用户信道的支持能力。 利用本公开的方法和系统，基站侧系统可以在一个时隙上通过自适应多用户信道自适应地和准确地获取移动终端对语音业务的支持能力。

公开(公告)号：US20120213168A1

公开(公告)日：2012-08-23

申请号：US13378345

申请日：2009-11-12

申请人： Xinhui Wang ,  Jing Li

发明人： Xinhui Wang ,  Jing Li

IPC分类号： H04W72/04

CPC分类号： H04W72/042 ,  H04W8/22 ,  H04W72/048

摘要： A method for indicating a frame mapping way is provided, including: a network side notifying a mobile station of information of a SACCH frame mapping way used by the mobile station. An apparatus for indicating a frame mapping way is further provided, including a determination unit and a notification unit, wherein the determination unit is for determining a used SACCH frame mapping way for a mobile station; the notification unit is for notifying the mobile station of information of a SACCH frame mapping way used by the mobile station. With the invention, the network side can notify the mobile station of the information of which frame mapping way is used determined for the mobile station, thereby solving the problem that the mobile station does not know which frame mapping way is used, greatly improving the performance of the communication system after the mobile station uses the determined frame mapping way.

摘要翻译： 提供了一种用于指示帧映射方式的方法，包括：网络侧向移动台通知移动台使用的SACCH帧映射方式的信息。 还提供了一种用于指示帧映射方式的装置，包括确定单元和通知单元，其中所述确定单元用于确定用于移动台的所使用的SACCH帧映射方式; 通知单元用于向移动台通知移动台使用的SACCH帧映射方式的信息。 利用本发明，网络侧可以向移动台通知为移动台确定哪种帧映射方式的信息，从而解决移动台不知道使用哪种帧映射方式的问题，大大提高了性能 在移动台使用确定的帧映射方式之后的通信系统。

公开(公告)号：US08198673B2

公开(公告)日：2012-06-12

申请号：US13080702

申请日：2011-04-06

申请人： Haizhou Yin ,  Xinhui Wang ,  Kevin K. Chan ,  Zhibin Ren

发明人： Haizhou Yin ,  Xinhui Wang ,  Kevin K. Chan ,  Zhibin Ren

IPC分类号： H01L21/00

CPC分类号： H01L21/26586 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/66659 ,  H01L29/7835

摘要： The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.

摘要翻译： 本发明提供了形成非对称场效应晶体管的方法。 该方法包括在半导体衬底的顶部上形成栅极结构，该栅极结构包括一个栅极叠层和邻近该栅极叠层的侧壁的间隔物，并具有与第一侧相对的第一侧和第二侧; 从衬底中的栅极结构的第一侧进行成角度的离子注入，从而形成与第一侧相邻的离子注入区域，其中栅极结构防止成角度的离子注入到达邻近第二侧的衬底 门结构; 以及在栅极结构的第一和第二侧在衬底上进行外延生长。 结果，在离子注入区域上的外延生长比经历无离子注入的区域慢得多。 通过外延生长形成到栅极结构的第二侧的源极区域的高度高于通过外延生长形成于栅极结构的第一侧的漏极区域的高度。 还提供了由此形成的半导体结构。

公开(公告)号：US20110171788A1

公开(公告)日：2011-07-14

申请号：US12684997

申请日：2010-01-11

申请人： Kevin K. Chan ,  Zhibin Ren ,  Xinhui Wang ,  Haizhou Yin

发明人： Kevin K. Chan ,  Zhibin Ren ,  Xinhui Wang ,  Haizhou Yin

IPC分类号： H01L21/336

CPC分类号： H01L29/66628 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66772

摘要： A method for forming a field effect device includes forming a gate portion on a silicon-on-insulator layer (SOI), forming first spacer members on the SOI layer adjacent to the gate portion, depositing a layer of spacer material on the SOI layer, the first spacer members, and the gate portion, removing portions of the layer of spacer material to form second spacer members on the SOI layer adjacent to the first spacer members, forming a source region and a drain region on the SOI layer by implanting ions in the SOI layer, and etching to remove the second spacer members.

摘要翻译： 一种形成场效应器件的方法包括在绝缘体上硅层（SOI）上形成栅极部分，在邻近栅极部分的SOI层上形成第一间隔元件，在SOI层上沉积间隔物材料层， 第一隔离构件和栅极部分，去除间隔物材料层的部分，以在与第一间隔件相邻的SOI层上形成第二间隔件，通过将离子注入到SOI层上形成源极区域和漏极区域 SOI层，并蚀刻以除去第二间隔件。