公开(公告)号：US07312524B2

公开(公告)日：2007-12-25

申请号：US11324479

申请日：2006-01-03

申请人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Newmayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

发明人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Newmayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

IPC分类号： H01L23/12 ,  H01L23/053

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种在使用等离子体增强化学气相沉积（“PECVD”）工艺的平行板化学气相沉积工艺中制造包括Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US07049247B2

公开(公告)日：2006-05-23

申请号：US10838849

申请日：2004-05-03

申请人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Neumayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

发明人： Stephen M. Gates ,  Alfred Grill ,  David R. Medeiros ,  Deborah Neumayer ,  Son Van Nguyen ,  Vishnubhai V. Patel ,  Xinhui Wang

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/31695

摘要： A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition (“PECVD”) process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.

摘要翻译： 公开了一种使用等离子体增强化学气相沉积（“PECVD”）工艺在平行板化学气相沉积工艺中制造包含Si，C，O和H原子的热稳定超低介电常数膜的方法。 还公开了通过该方法制备的包含热稳定的超低介电常数材料的绝缘层的电子器件。 为了制造热稳定的超低介电常数膜，使用特定的前体材料，例如硅烷衍生物，例如二乙氧基甲基硅烷（DEMS）和有机分子，例如双环庚二烯和环戊烯氧化物。

公开(公告)号：US20090181178A1

公开(公告)日：2009-07-16

申请号：US12355316

申请日：2009-01-16

申请人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： C23C16/22

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C═C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，CC或[ S] n连接，其中n是上面定义的。

公开(公告)号：US07892648B2

公开(公告)日：2011-02-22

申请号：US11040778

申请日：2005-01-21

申请人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： B32B9/04

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，并且C原子的另一部分键合为Si-R-Si，其中R是苯基， - [CH 2] n - ，其中n大于或等于1，HC = CH，C = CH 2，C≡C或 一个[S] n连接，其中n是上面定义的。

公开(公告)号：US07479306B2

公开(公告)日：2009-01-20

申请号：US11132108

申请日：2005-05-18

申请人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： C23C16/22

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，另一部分C原子键合为Si-R-Si，其中R为苯基， - [CH2] n-，其中n大于或等于1，HC-CH，C-CH2，C≡C或 一个[S] n连接，其中n是上面定义的。

公开(公告)号：US08357608B2

公开(公告)日：2013-01-22

申请号：US12853278

申请日：2010-08-09

申请人： Stephen M Gates ,  Alfred Grill ,  Son Van Nguyen ,  Satyanarayana Venkata Nitta

发明人： Stephen M Gates ,  Alfred Grill ,  Son Van Nguyen ,  Satyanarayana Venkata Nitta

IPC分类号： H01L21/4763

CPC分类号： H01L29/06 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76801 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/538 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： An in-situ process is described incorporating plasma enhanced chemical vapor deposition comprising flowing at least one of a Si, Si+C, B, Si+B, Si+B+C, and B+C containing precursor, and a N containing precursors at first times and removing the N precursor at second times and starting the flow of an oxidant gas and a porogen gas into the chamber. A dielectric layer is described comprising a network having inorganic random three dimensional covalent bonding throughout the network which contains at least one SiCN, SiCNH, SiN, SiNH, BN, BNH, CBN, CBNH, BSiN, BSiNH, SiCBN and SiCBNH as a first component and a low k dielectric as a second component adjacent thereto.

摘要翻译： 描述了一种原位方法，其包括等离子体增强化学气相沉积，其包括流动含有Si，Si + C，B，Si + B，Si + B + C和B + C的前体中的至少一种和含N前体 并且第二次除去N前体，并开始将氧化剂气体和致孔剂气体流入室中。 描述了一种介电层，其包括在整个网络中具有无机随机三维共价键的网络，其包含至少一种SiCN，SiCNH，SiN，SiNH，BN，BNH，CBN，CBNH，BSiN，BSiNH，SiCBN和SiCBNH作为第一组分 和作为与其相邻的第二组分的低k电介质。

公开(公告)号：US08101236B2

公开(公告)日：2012-01-24

申请号：US12355316

申请日：2009-01-16

申请人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Qinghuang Lin ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： C23C16/40

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A method of fabricating a low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided. The method includes the deposition of the dielectric material from a first precursor which is an carbosilane or an alkoxycarbosilane molecule.

摘要翻译： 提供了一种制造具有增强的内聚强度的低k电介质材料的方法，用于包括互连和感测结构在内的电子结构中。 该方法包括从作为碳硅烷或烷氧基碳硅烷分子的第一前体沉积电介质材料。

公开(公告)号：US20110233513A1

公开(公告)日：2011-09-29

申请号：US12748542

申请日：2010-03-29

申请人： Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Stephen M. Gates ,  Tuan A. Vo ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Christos D. Dimitrakopoulos ,  Damon B. Farmer ,  Alfred Grill ,  Stephen M. Gates ,  Tuan A. Vo ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： H01L29/16 ,  H01L21/04 ,  C30B23/02

CPC分类号： H01L29/1606 ,  H01L29/7781 ,  H01L29/78 ,  H01L29/7831

摘要： Semiconductor structures and electronic devices are provided that includes at least one layer of an interfacial dielectric material located on an upper surface of a carbon-based material. The at least one layer of interfacial dielectric material has a short-range crystallographic bonding structure, typically hexagonal, that is the same as that of the carbon-based material and, as such, the at least one layer of interfacial dielectric material does not change the electronic structure of the carbon-based material. The presence of the at least one layer of interfacial dielectric material having the same short-range crystallographic bonding structure as that of the carbon-based material improves the interfacial bonding between the carbon-based material and any overlying material layer, including a dielectric material, a conductive material or a combination of a dielectric material and a conductive material. The improved interfacial bonding in turn facilitates formation of devices including a carbon-based material.

摘要翻译： 提供半导体结构和电子器件，其包括位于碳基材料的上表面上的至少一层界面介电材料层。 所述至少一层界面介电材料具有与碳基材料相同的短程结晶结合结构，通常是六边形，因此至少一层界面介电材料不会改变 碳基材料的电子结构。 具有与碳基材料相同的短程结晶结合结构的至少一层界面介电材料的存在改善了碳基材料和任何覆盖材料层（包括介电材料）之间的界面结合， 导电材料或介电材料和导电材料的组合。 改进的界面结合又有助于形成包括碳基材料的装置。

公开(公告)号：US07030468B2

公开(公告)日：2006-04-18

申请号：US10758724

申请日：2004-01-16

申请人： Stephen M. Gates ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Son Van Nguyen

发明人： Stephen M. Gates ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  Son Van Nguyen

IPC分类号： H01L23/58

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/02362 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.

摘要翻译： 包含Si，C，O和H元素的介电材料具有机械性能（拉伸应力，弹性模量，硬度内聚强度，水中裂纹速度）的特定值，这导致稳定的超低k膜，其不被水蒸气降解 或集成处理。 电介质材料具有约2.8或更小的介电常数，小于45MPa的拉伸应力，约2至约15GPa的弹性模量和约0.2至约2GPa的硬度。 还提供了包括本发明的电介质材料的电子结构以及制造介电材料的各种方法。

公开(公告)号：US20110101489A1

公开(公告)日：2011-05-05

申请号：US12986531

申请日：2011-01-07

申请人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

发明人： Daniel C. Edelstein ,  Stephen M. Gates ,  Alfred Grill ,  Michael Lane ,  Robert D. Miller ,  Deborah A. Neumayer ,  Son Van Nguyen

IPC分类号： H01L23/522

CPC分类号： H01L31/103 ,  Y10T428/31663

摘要： A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH3 functional groups, and another fraction of the C atoms are bonded as Si—R—Si, wherein R is phenyl, —[CH2]n— where n is greater than or equal to 1, HC═CH, C═CH2, C≡C or a [S]n linkage, where n is a defined above.

摘要翻译： 提供了一种用于包括互连和感测结构的电子结构中具有增强的内聚强度的低k电介质材料，其包括其中一部分C原子键合为Si-CH 3官能团的Si，C，O和H的原子 ，并且C原子的另一部分键合为Si-R-Si，其中R是苯基， - [CH 2] n - ，其中n大于或等于1，HC = CH，C = CH 2，C≡C或 一个[S] n连接，其中n是上面定义的。