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公开(公告)号：US09373666B2
公开(公告)日：2016-06-21
申请号：US13034776
申请日：2011-02-25
CPC分类号： H01L27/14692 , H01L27/14609 , H01L27/14612 , H01L27/307 , H01L27/3253 , H01L51/0021 , H01L51/0022 , H01L51/0097 , H01L2251/5338 , H05K13/046 , Y02E10/549 , Y10T29/49128 , Y10T29/4913
摘要： Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.
摘要翻译： 使用例如冷焊技术提供包括接合两个或更多个单独形成的电路层的系统和方法。 可以提供加工技术，用于将无机和/或有机半导体器件组合在包括例如微芯片，诸如太阳能电池，光电检测器和有机发光二极管（OLED）的光电子器件的设备中，以及具有多层电路的其它设备。 键合预成型电路层的方法可以包括使用两个或多个电路层的冲压和压接触点在一起。 这种方法可以发现适用性，例如在将电路连接到成形基板上，包括各种圆形和不规则形状，并且可用于组合具有不同结构特性的装置，例如， 从不同的材料系统。
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公开(公告)号：US09496315B2
公开(公告)日：2016-11-15
申请号：US12859496
申请日：2010-08-19
IPC分类号： H01L51/44 , H01L27/30 , B82Y10/00 , H01L27/28 , H01L51/10 , H01L51/00 , H01L51/05 , H01L51/42
CPC分类号： H01L27/307 , B82Y10/00 , H01L27/283 , H01L51/0046 , H01L51/0078 , H01L51/0541 , H01L51/105 , H01L51/424
摘要： Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.
摘要翻译： 提供了顶栅，底接触有机薄膜晶体管。 晶体管可以包括金属双层电极，以帮助器件内的电荷移动。 在一个实施例中，有机晶体管包括设置在衬底的第一区域上的漏电极和源电极，设置在漏电极和源电极上并与漏电极和源电极直接物理接触的过渡金属氧化物层，有机优先导孔 沟道层设置在金属氧化物之上，并且在漏电极和源电极之间，以及设置在沟道上的栅电极。
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公开(公告)号：US20120218719A1
公开(公告)日：2012-08-30
申请号：US13034776
申请日：2011-02-25
CPC分类号： H01L27/14692 , H01L27/14609 , H01L27/14612 , H01L27/307 , H01L27/3253 , H01L51/0021 , H01L51/0022 , H01L51/0097 , H01L2251/5338 , H05K13/046 , Y02E10/549 , Y10T29/49128 , Y10T29/4913
摘要： Systems and methods including bonding two or more separately formed circuit layers are provided using, for example, cold welding techniques. Processing techniques may be provided for combining inorganic and/or organic semiconductor devices in apparatus including, for example, microchips, optoelectronic devices, such as solar cells, photodetectors and organic light emitting diodes (OLEDs), and other apparatus with multi-layer circuitry. Methods of bonding preformed circuit layers may include the use of stamping and pressure bonding contacts of two or more circuit layers together. Such methods may find applicability, for example, in bonding circuitry to shaped substrates, including various rounded and irregular shapes, and may be used to combine devices with different structural properties, e.g. from different materials systems.
摘要翻译： 使用例如冷焊技术提供包括接合两个或更多个单独形成的电路层的系统和方法。 可以提供加工技术，用于将无机和/或有机半导体器件组合在包括例如微芯片，诸如太阳能电池，光电检测器和有机发光二极管（OLED）的光电子器件的设备中，以及具有多层电路的其它设备。 键合预成型电路层的方法可以包括使用两个或多个电路层的冲压和压接触点在一起。 这种方法可以发现适用性，例如在将电路连接到成形基板上，包括各种圆形和不规则形状，并且可用于组合具有不同结构特性的装置，例如， 从不同的材料系统。
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公开(公告)号：US20110049489A1
公开(公告)日：2011-03-03
申请号：US12859496
申请日：2010-08-19
CPC分类号： H01L27/307 , B82Y10/00 , H01L27/283 , H01L51/0046 , H01L51/0078 , H01L51/0541 , H01L51/105 , H01L51/424
摘要： Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.
摘要翻译： 提供了顶栅，底接触有机薄膜晶体管。 晶体管可以包括金属双层电极，以帮助器件内的电荷移动。 在一个实施例中，有机晶体管包括设置在衬底的第一区域上的漏电极和源电极，设置在漏电极和源电极上并与漏电极和源电极直接物理接触的过渡金属氧化物层，有机优先导孔 沟道层设置在金属氧化物之上，并且在漏电极和源电极之间，以及设置在沟道上的栅电极。
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公开(公告)号：US20150357366A1
公开(公告)日：2015-12-10
申请号：US14720312
申请日：2015-05-22
IPC分类号： H01L27/146 , H01L31/0224 , H01L31/075 , H01L31/0304
CPC分类号： H01L27/14643 , H01L27/1446 , H01L27/14618 , H01L27/14636 , H01L31/022408 , H01L31/0304 , H01L31/03926 , H01L31/075 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02E10/548
摘要： A device includes a three-dimensionally curved substrate, a patterned metal layer disposed on the curved substrate, and an array of optoelectronic devices, each optoelectronic device including an optoelectronic structure supported by the curved substrate. Each optoelectronic structure includes an inorganic semiconductor stack. The device further includes a set of contact stripes extending across the curved substrate, each optoelectronic structure being coupled to a respective contact stripe of the set of contact stripes. The array of optoelectronic devices is secured to the curved substrate via a bond between the patterned metal layer and the set of contact stripes.
摘要翻译： 一种器件包括三维弯曲的衬底，设置在弯曲衬底上的图案化金属层和光电器件阵列，每个光电器件包括由弯曲衬底支撑的光电结构。 每个光电子结构包括无机半导体堆叠。 该装置还包括跨越弯曲基板延伸的一组接触条，每个光电子结构耦合到该组接触条的相应接触条。 光电子器件的阵列通过图案化的金属层和一组接触条之间的接合固定到弯曲的基底上。
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公开(公告)号：US09065010B2
公开(公告)日：2015-06-23
申请号：US13536003
申请日：2012-06-28
IPC分类号： H01L21/00 , H01L31/18 , H01L27/144 , H01L31/0392 , H01L31/075
CPC分类号： H01L27/14643 , H01L27/1446 , H01L27/14618 , H01L27/14636 , H01L31/022408 , H01L31/0304 , H01L31/03926 , H01L31/075 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02E10/548
摘要： A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the optoelectronic device. The plurality of inorganic semiconductor layers are permanently attached to a second substrate, which is flexible. The plurality of inorganic semiconductor layers are released from the first substrate after the attaching step, and the second substrate is deformed to a non-planar configuration.
摘要翻译： 制造光电子器件的方法包括在第一衬底上产生光电子结构。 光电结构包括释放层和由释放层支撑的多个无机半导体层。 多个无机半导体层被配置为在光电子器件的操作中是有效的。 多个无机半导体层永久地附接到柔性的第二基板上。 在安装步骤之后，多个无机半导体层从第一基板释放，第二基板变形为非平面构造。
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公开(公告)号：US20130001731A1
公开(公告)日：2013-01-03
申请号：US13536003
申请日：2012-06-28
IPC分类号： H01L31/18 , H01L27/144
CPC分类号： H01L27/14643 , H01L27/1446 , H01L27/14618 , H01L27/14636 , H01L31/022408 , H01L31/0304 , H01L31/03926 , H01L31/075 , H01L31/1844 , H01L31/1892 , Y02E10/544 , Y02E10/548
摘要： A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the optoelectronic device. The plurality of inorganic semiconductor layers are permanently attached to a second substrate, which is flexible. The plurality of inorganic semiconductor layers are released from the first substrate after the attaching step, and the second substrate is deformed to a non-planar configuration.
摘要翻译： 制造光电子器件的方法包括在第一衬底上产生光电子结构。 光电结构包括释放层和由释放层支撑的多个无机半导体层。 多个无机半导体层被配置为在光电子器件的操作中是有效的。 多个无机半导体层永久地附接到柔性的第二基板上。 在安装步骤之后，多个无机半导体层从第一基板释放，第二基板变形为非平面构造。
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公开(公告)号：US10243018B2
公开(公告)日：2019-03-26
申请号：US14720312
申请日：2015-05-22
IPC分类号： H01L31/00 , H01L27/146 , H01L31/0304 , H01L31/0224 , H01L27/144 , H01L31/0392 , H01L31/075 , H01L31/18
摘要： A device includes a three-dimensionally curved substrate, a patterned metal layer disposed on the curved substrate, and an array of optoelectronic devices, each optoelectronic device including an optoelectronic structure supported by the curved substrate. Each optoelectronic structure includes an inorganic semiconductor stack. The device further includes a set of contact stripes extending across the curved substrate, each optoelectronic structure being coupled to a respective contact stripe of the set of contact stripes. The array of optoelectronic devices is secured to the curved substrate via a bond between the patterned metal layer and the set of contact stripes.
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公开(公告)号：US09793481B2
公开(公告)日：2017-10-17
申请号：US12331062
申请日：2008-12-09
申请人： Stephen R. Forrest , Momchil T. Mihnev , Andre D. Taylor , Xin Xu
发明人： Stephen R. Forrest , Momchil T. Mihnev , Andre D. Taylor , Xin Xu
IPC分类号： H01L51/00
CPC分类号： H01L51/0021
摘要： A method is provided. A first layer is provided over a substrate, the first layer comprising a first material. A patterned second layer is applied over the first layer via stamping. The second layer comprising a second material. The second layer covers a first portion of the first layer, and does not cover a second portion of the first layer. The second portion of the first layer is removed via a subtractive process while the first portion of the first layer is protected from removal by the patterned second layer.
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公开(公告)号：US10670566B2
公开(公告)日：2020-06-02
申请号：US15777750
申请日：2016-11-18
申请人： Wan Y. Shih , Wei-Heng Shih , Christopher Emery , Xin Xu , Suresh Joshi , Wei Wu
发明人： Wan Y. Shih , Wei-Heng Shih , Christopher Emery , Xin Xu , Suresh Joshi , Wei Wu
IPC分类号： C12Q1/18 , G01N29/12 , G01N29/036 , G01N29/02
摘要： A system for and method of antimicrobial susceptibility testing includes detecting a resonance peak of a sensor provided with live microbes on a surface thereof; applying a substance to the live microbes; detecting a resonance peak of said sensor after application of said substance; determining a width of a top of each of said resonance peaks before and after application of the substance from one of: (1) a phase angle versus frequency plot where the phase angle is the phase angle of the electrical impedance of said sensor. (2) a real part of a plot of an electrical impedance versus frequency of said sensor. (3) a plot of a magnitude of electrical impedance versus frequency of said sensor, and (4) a phase angle versus frequency plot where the phase angle is the phase angle between an output voltage and an input voltage of said sensor, and comparing the determined widths of tops of said resonance peaks or standard deviations of the frequency of said resonance peaks to determine antimicrobial susceptibility including the minimum inhibitory concentration (MIC).
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