公开(公告)号：US20100059892A1

公开(公告)日：2010-03-11

申请号：US12447821

申请日：2007-12-14

申请人： Michiko Takei ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi ,  Steven Roy Droes

发明人： Michiko Takei ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi ,  Steven Roy Droes

IPC分类号： H01L23/532 ,  H01L21/3205

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L21/823418 ,  H01L21/823443 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/66772 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2224/2919 ,  H01L2224/83894 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/3512

摘要： The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer.

摘要翻译： 本发明提供半导体装置的制造方法，显示装置的制造方法，半导体装置，半导体元件的制造方法以及半导体元件，能够提供更多的低电阻半导体元件 通过更简单的步骤精心准备。 本发明的半导体装置的制造方法是在基板上具有半导体元件的半导体装置的制造方法，其特征在于，所述制造方法包括金属硅化物形成工序，将所述半导体元件转印到所述基板上，所述半导体 具有硅层和金属层的多层结构的元件，并且通过加热，从硅形成金属硅化物用于硅层的金属层侧部分和用于金属层的硅层侧部分的金属。

公开(公告)号：US07897443B2

公开(公告)日：2011-03-01

申请号：US11883483

申请日：2006-01-17

申请人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

发明人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76243 ,  H01L21/76256 ,  H01L27/1214 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833

摘要： The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.

摘要翻译： 本发明提供一种半导体器件的制造方法，其能够提高包含通过在绝缘基板上转印而形成的单晶半导体层的半导体元件的特性。 本发明是一种半导体器件的制造方法，其包括在绝缘基板上形成的单晶半导体层，其制造方法包括以下步骤：将分离用物质注入单晶半导体基板，形成分离层; 将在分离层分离的单晶半导体衬底的一部分转印到绝缘衬底上，从而形成单晶半导体层; 在所述单晶半导体层的至少一侧上形成含氢层; 并将氢从含氢层扩散到单晶半导体层。

公开(公告)号：US08288184B2

公开(公告)日：2012-10-16

申请号：US12741852

申请日：2008-10-14

申请人： Michiko Takei ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Steven Roy Droes

发明人： Michiko Takei ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Steven Roy Droes

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L21/31053 ,  H01L21/76819 ,  H01L27/1214 ,  H01L29/66772

摘要： A production method for producing a semiconductor device capable of improving surface flatness and suppressing a variation in electrical characteristics of the semiconductor chip, and improving production yield. The production method includes the steps of: forming a first insulating film on a semiconductor substrate and on a conductive pattern film formed on the semiconductor substrate and reducing a thickness of the first insulating film in a region where the conductive pattern film is arranged by patterning; forming a second insulating film and polishing the second insulating film, thereby forming a flattening film; implanting a substance for cleavage into the semiconductor substrate through the flattening film, thereby forming a cleavage layer; transferring the semiconductor chip onto a substrate with an insulating surface so that the chip surface on the side opposite to the semiconductor substrate is attached thereto; and separating the semiconductor substrate from the cleavage layer.

摘要翻译： 一种能够提高表面平坦性并抑制半导体芯片的电气特性的变化的半导体装置的制造方法，提高制造成品率。 该制造方法包括以下步骤：在半导体衬底上形成第一绝缘膜和形成在半导体衬底上的导电图案膜上，通过图案化在导电图案膜布置的区域中减小第一绝缘膜的厚度; 形成第二绝缘膜并抛光第二绝缘膜，从而形成平坦化膜; 通过平坦化的膜将用于裂解的物质注入到半导体衬底中，从而形成裂解层; 将半导体芯片转印到具有绝缘表面的基板上，使得与半导体基板相对的一侧的芯片表面附着在其上; 并将半导体衬底与解理层分离。

公开(公告)号：US20110006376A1

公开(公告)日：2011-01-13

申请号：US12922119

申请日：2009-03-03

申请人： Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi ,  Kenshi Tada ,  Steven Roy Droes

发明人： Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi ,  Kenshi Tada ,  Steven Roy Droes

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/30 ,  H01L29/739

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/4908 ,  H01L29/66772

摘要： The present invention provides a semiconductor device capable of improving subthreshold characteristics of a PMOS transistor that is included in a thinned base layer and bonded to another substrate, a production method of such a semiconductor device, and a display device. The semiconductor device of the present invention is a semiconductor device, including: a substrate; and a device part bonded to the substrate, the device part including a base layer and a PMOS transistor, the PMOS transistor including a first electrical conduction path and a first gate electrode, the first electrical conduction path being provided inside the base layer on a side where the first gate electrode is disposed.

摘要翻译： 本发明提供一种半导体器件，其能够改善包括在薄化的基底层中并结合到另一衬底的PMOS晶体管的亚阈值特性，这种半导体器件的制造方法和显示器件。 本发明的半导体器件是半导体器件，包括：衬底; 以及与基板接合的器件部件，所述器件部件包括基极层和PMOS晶体管，所述PMOS晶体管包括第一导电路径和第一栅电极，所述第一导电路径设置在所述基极层的侧面 其中设置第一栅电极。

公开(公告)号：US20120155038A1

公开(公告)日：2012-06-21

申请号：US13392247

申请日：2010-07-28

申请人： Yasumori Fukushima ,  Masaki Fujiwara ,  Steven Roy Droes

发明人： Yasumori Fukushima ,  Masaki Fujiwara ,  Steven Roy Droes

IPC分类号： H05K1/02 ,  H05K3/20 ,  H05K3/00 ,  H05K1/18

CPC分类号： H05K1/185 ,  H01L21/4846 ,  H01L23/4985 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L2224/73267 ,  H01L2224/82031 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/3511 ,  H05K1/189 ,  H05K3/08 ,  H05K2201/0175 ,  H05K2203/016 ,  H05K2203/0384 ,  H05K2203/095 ,  H05K2203/1469 ,  Y10T29/49128 ,  H01L2924/00

摘要： The present invention provides a high-performance flexible circuit board having excellent flexibility, a fine wiring pattern, and fine electric contacts, and a manufacturing method thereof. In a flexible circuit board (20), a second insulating layer (24) made of an inorganic material is positioned between a wiring layer (25) and a first insulating layer (23) made of an inorganic material.

摘要翻译： 本发明提供一种具有优异的柔性，精细布线图案和精细电触点的高性能柔性电路板及其制造方法。 在柔性电路板（20）中，由无机材料制成的第二绝缘层（24）位于布线层（25）和由无机材料制成的第一绝缘层（23）之间。

公开(公告)号：US20100270618A1

公开(公告)日：2010-10-28

申请号：US12741852

申请日：2008-10-14

申请人： Michiko Takei ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Steven Roy Droes

发明人： Michiko Takei ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Steven Roy Droes

IPC分类号： H01L29/786 ,  H01L21/762 ,  H01L23/48

CPC分类号： H01L27/1266 ,  H01L21/31053 ,  H01L21/76819 ,  H01L27/1214 ,  H01L29/66772

摘要： The present invention provides a production method of a semiconductor device, capable of improving surface flatness of a semiconductor chip formed on a semiconductor substrate and thereby suppressing a variation in electrical characteristics of the semiconductor chip transferred onto a substrate with an insulating surface, and further capable of improving production yield. The present invention provides a production method of a semiconductor device including a semiconductor chip on a substrate with an insulating surface, the semiconductor chip having a conductive pattern film, the production method including the following successive steps of: forming a first insulating film on a semiconductor substrate and on a conductive pattern film formed on the semiconductor substrate and reducing a thickness of the first insulating film in a region where the conductive pattern film is arranged by patterning; forming a second insulating film and polishing the second insulating film, thereby forming a flattening film; implanting a substance for cleavage into the semiconductor substrate through the flattening film, thereby forming a cleavage layer; transferring the semiconductor chip onto a substrate with an insulating surface so that the chip surface on the side opposite to the semiconductor substrate is attached thereto; and separating the semiconductor substrate from the cleavage layer. The present invention is also a semiconductor device produced by the production method.

摘要翻译： 本发明提供一种半导体器件的制造方法，其能够提高形成在半导体基板上的半导体芯片的表面平坦性，从而抑制转印到具有绝缘表面的基板上的半导体芯片的电特性的变化， 提高产量。 本发明提供一种半导体器件的制造方法，该半导体器件在具有绝缘表面的衬底上具有半导体芯片，该半导体芯片具有导电图案膜，该制造方法包括以下连续步骤：在半导体上形成第一绝缘膜 并且在形成在半导体衬底上的导电图案膜上，并且通过图案化在导电图案膜布置的区域中减小第一绝缘膜的厚度; 形成第二绝缘膜并抛光第二绝缘膜，从而形成平坦化膜; 通过平坦化的膜将用于裂解的物质注入到半导体衬底中，从而形成裂解层; 将半导体芯片转印到具有绝缘表面的基板上，使得与半导体基板相对的一侧的芯片表面附着在其上; 并将半导体衬底与解理层分离。 本发明也是通过该制造方法制造的半导体装置。

公开(公告)号：US20080149928A1

公开(公告)日：2008-06-26

申请号：US11883483

申请日：2006-01-17

申请人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

发明人： Masao Moriguchi ,  Yutaka Takafuji ,  Steven Roy Droes

IPC分类号： H01L29/06 ,  H01L21/18

CPC分类号： H01L27/1266 ,  H01L21/76243 ,  H01L21/76256 ,  H01L27/1214 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833

摘要： The present invention provides a production method of a semiconductor device, which can improve characteristics of a semiconductor element including a single crystal semiconductor layer formed by transferring on an insulating substrate. The present invention is a production method of a semiconductor device comprising a single crystal semiconductor layer formed on an insulating substrate, the production method comprising the steps of: implanting a substance for separation into a single crystal semiconductor substrate, thereby forming a separation layer; transferring a part of the single crystal semiconductor substrate, separated at the separation layer, onto the insulating substrate, thereby forming the single crystal semiconductor layer; forming a hydrogen-containing layer on at least one side of the single crystal semiconductor layer; and diffusing hydrogen from the hydrogen-containing layer to the single crystal semiconductor layer.

摘要翻译： 本发明提供一种半导体器件的制造方法，其能够提高包含通过在绝缘基板上转印而形成的单晶半导体层的半导体元件的特性。 本发明是一种半导体器件的制造方法，其包括在绝缘基板上形成的单晶半导体层，其制造方法包括以下步骤：将分离用物质注入单晶半导体基板，形成分离层; 将在分离层分离的单晶半导体衬底的一部分转印到绝缘衬底上，从而形成单晶半导体层; 在所述单晶半导体层的至少一侧上形成含氢层; 并将氢从含氢层扩散到单晶半导体层。