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1.发明授权Method of plasma load impedance tuning for engineered transients by synchronized modulation of a source power or bias power RF generator 有权通过源功率或偏置功率RF发生器的同步调制来设计瞬变的等离子体负载阻抗调谐方法公开(公告)号：US08324525B2
公开(公告)日：2012-12-04
申请号：US12129091
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC: B23K10/00
CPC classification number: H05H1/46 , H01J37/32091 , H01J37/32174 , H01J37/32935
Abstract: A method processing a workpiece in a plasma reactor chamber in which a first one of plural applied RF plasma powers is modulated in accordance with a time-varying modulation control signal corresponding to a desired process transient cycle. The method achieves a reduction in reflected power by modulating a second one of the plural plasma powers in response to the time-varying modulation control signal.
Abstract translation: 一种在等离子体反应室中处理工件的方法，其中根据对应于期望的过程瞬态循环的时变调制控制信号调制多个施加的RF等离子体功率中的第一个。 该方法通过响应于时变调制控制信号调制多个等离子体功率中的第二个来实现反射功率的降低。
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公开(公告)号：US07994872B2
公开(公告)日：2011-08-09
申请号：US12506658
申请日：2009-07-21
Applicant: Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
Inventor： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
IPC: H03H7/40
CPC classification number: H03H7/38
Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。
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3.发明授权Plasma reactor with reduced electrical skew using electrical bypass elements 有权使用电旁路元件减少电偏斜的等离子体反应器公开(公告)号：US07988815B2
公开(公告)日：2011-08-02
申请号：US11828568
申请日：2007-07-26
Applicant: Shahid Rauf , Kenneth S. Collins , Kallol Bera , Kartik Ramaswamy , Hiroji Hanawa , Andrew Nguyen , Steven C. Shannon , Lawrence Wong , Satoru Kobayashi , Troy S. Detrick , James P. Cruse
Inventor： Shahid Rauf , Kenneth S. Collins , Kallol Bera , Kartik Ramaswamy , Hiroji Hanawa , Andrew Nguyen , Steven C. Shannon , Lawrence Wong , Satoru Kobayashi , Troy S. Detrick , James P. Cruse
IPC: C23C16/00 , H01L21/306
CPC classification number: H01J37/16 , H01J37/20 , H01J37/32082 , H01J37/32623 , H01J37/32697 , H01J37/32834
Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.
Abstract translation: 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。
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4.发明申请METHOD OF PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权通过同步低功率射频发生器的同步调制的等离子体负载阻抗调制方法公开(公告)号：US20090298287A1
公开(公告)日：2009-12-03
申请号：US12129024
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC: H01L21/3065 , H01L21/3205 , C23C16/505 , H01L21/31
CPC classification number: H01J37/32146 , H01J37/32091 , H01J37/321 , H01J37/32183 , H01J37/32935
Abstract: A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
Abstract translation: 提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。
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5.发明申请PLASMA REACTOR WITH PLASMA LOAD IMPEDANCE TUNING FOR ENGINEERED TRANSIENTS BY SYNCHRONIZED MODULATION OF AN UNMATCHED LOW POWER RF GENERATOR 有权具有等离子体负载阻抗调节的等离子体反应器通过同步低功率射频发生器的同步调制实现工程过渡公开(公告)号：US20090294061A1
公开(公告)日：2009-12-03
申请号：US12128926
申请日：2008-05-29
Applicant: Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
Inventor： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
CPC classification number: H01J37/32935 , H01J37/32091 , H01J37/32183
Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.
Abstract translation: 使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。
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Patent Agency Ranking
公开(公告)号：US20090130856A1
公开(公告)日：2009-05-21
申请号：US12355130
申请日：2009-01-16
Applicant: Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
Inventor： Steven C. Shannon , Daniel J. Hoffman , Jeremiah T. P. Pender , Tarreg Mawari
IPC: H01L21/3065
CPC classification number: H05H1/0081 , H01J37/32174 , H01J37/32935 , H01L21/67005
Abstract: Methods for monitoring process drift using plasma characteristics are provided. In one embodiment, a method for monitoring process drift using plasma characteristics includes obtaining metrics of current and voltage information of a first waveform coupled to a plasma during a plasma process formed on a substrate, obtaining metrics of current and voltage information of a second waveform coupled to the plasma during the plasma process formed on the substrate, the first and second waveforms having different frequencies, determining at least one characteristic of the plasma using the metrics obtained from each different frequency waveform, and adjusting the plasma process in response to the determined at least one characteristic of the plasma.
Abstract translation: 提供了使用等离子体特性监测过程漂移的方法。 在一个实施例中，使用等离子体特性来监测过程漂移的方法包括获得在形成在衬底上的等离子体工艺期间耦合到等离子体的第一波形的电流和电压信息的度量，获得耦合的第二波形的电流和电压信息的度量 在形成在衬底上的等离子体工艺期间等离子体，第一和第二波形具有不同的频率，使用从每个不同频率波形获得的度量来确定等离子体的至少一个特性，以及响应于所确定的等离子体处理 等离子体的至少一个特征。
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7.发明申请PLASMA PROCESS UNIFORMITY ACROSS A WAFER BY APPORTIONING POWER AMONG PLURAL VHF SOURCES 失效通过在多个VHF源上分配功率，在等离子体处理过程中的均匀性公开(公告)号：US20080182416A1
公开(公告)日：2008-07-31
申请号：US11733764
申请日：2007-04-11
Applicant: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
Inventor： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC: H01L21/302 , H01L21/461
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165
Abstract: A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.
Abstract translation: 提供了一种用于处理具有至少包括天花板电极和工件支撑电极的电极的等离子体反应器室中的工件的方法。 该方法包括将各个VHF频率f 1和f 2的相应RF功率源耦合到（a）电极中的相应电极或（b）电极中的公共电极，其中f 1足够高以产生中心高 不均匀的等离子体离子分布和f 2足够低以产生中心 - 低不均匀等离子体离子分布。 该方法还包括调整f 1频率处的RF参数与f 2频率处的RF参数的比率，以便控制等离子体离子密度分布，RF参数是RF功率，RF电压或RF电流中的任何一个。
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8.发明申请PLASMA REACTOR WITH ION DISTRIBUTION UNIFORMITY CONTROLLER EMPLOYING PLURAL VHF SOURCES 审中-公开具有离子分布均质控制器的等离子体反应器使用多个甚高频源公开(公告)号：US20080178803A1
公开(公告)日：2008-07-31
申请号：US11733913
申请日：2007-04-11
Applicant: KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
Inventor： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC: B05C11/00
CPC classification number: H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32935
Abstract: A plasma reactor includes a ceiling electrode facing a workpiece support pedestal and a pedestal electrode in the pedestal and first and second VHF power sources of different frequencies coupled to the same or to different ones of the ceiling electrode and the pedestal electrode. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber. The reactor further includes a controller programmed to change the relative output power levels of the first and second VHF power sources to: (a) increase the relative output power level of the first VHF power source whenever plasma ion distribution has a predominantly edge-high non-uniformity, and (b) increase the relative output power level of the second VHF power source whenever plasma ion distribution has a predominantly center-high non-uniformity.
Abstract translation: 等离子体反应器包括面对工件支撑基座的顶板电极和基座中的基座电极以及耦合到天花板电极和基座电极中相同或不同的不同频率的第一和第二VHF电源。 第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。 电抗器还包括被编程为将第一和第二VHF电源的相对输出功率电平改变为：（a）只要等离子体离子分布具有主要为边缘高的非高电平的第一VHF电源的相对输出功率电平， （b）当等离子体离子分布主要是中心高的不均匀性时，增加第二VHF电源的相对输出功率电平。
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9.发明授权Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator 失效通过控制耦合到谐波谐振器的可变频率在晶片上的等离子体工艺均匀性公开(公告)号：US08080479B2
公开(公告)日：2011-12-20
申请号：US11733858
申请日：2007-04-11
Applicant: Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
Inventor： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC: H01L21/302
CPC classification number: C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
Abstract: A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.
Abstract translation: 在等离子体反应器室中处理工件的方法包括经由电极将RF功率耦合到腔室中的等离子体，RF功率在包括基频f的频率范围内是可变频率的。 该方法还包括将电极耦合到具有作为基频f的谐波的谐振VHF频率F的谐振器，以便在谐波处产生VHF功率。 该方法通过控制从f向F转换为F的发电机的功率比例来控制基波f附近的功率与谐波F功率的比值，以便控制等离子体离子密度分布。
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公开(公告)号：US20110291771A1
公开(公告)日：2011-12-01
申请号：US13205933
申请日：2011-08-09
Applicant: Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
Inventor： Steven C. Shannon , Jang Gyoo Yang , Matthew L. Miller , Kartik Ramaswamy , James P. Cruse
CPC classification number: H03H7/38
Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.
Abstract translation: 提供了用于与处理室一起使用的功率匹配装置的装置和方法。 在本发明的一个方面，提供了一种功率匹配装置，其包括耦合到第一可调电容器的第一RF功率输入端，耦合到第二可调电容器的第二RF功率输入端，耦合到第一可调电容器的功率端， 耦合到功率结的接收器电路，耦合到功率结的高电压滤波器和高压滤波器具有高电压输出，耦合到功率结的电压/电流检测器和连接到功率结的RF功率输出 电压/电流检测器。
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