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公开(公告)号：US07666689B2
公开(公告)日：2010-02-23
申请号：US11609573
申请日：2006-12-12
IPC分类号： H01L21/00
CPC分类号： B24C3/322
摘要： A method holds wafers that contain patterned structures using a particle blasting tool. Next, the method directs particles at the patterned structures, such that the particles contact the patterned structures with a predetermined velocity and remove the patterned structures. This process of directing the particles at the wafer is controlled to stop directing the particles when substantially all of the patterned structures are removed from the wafer. This process also comprises selecting the particles to have a size equal to or less than 3 microns. For example, the particles can comprise aluminum oxide, silicon oxide, cerium, and/or a plastic. By maintaining the particle size equal to 3 microns or less, the blasting produces a substantially smooth wafer surface, thereby omitting the need for subsequent wafer polishing. Further, the wafers produced by such processing do not exhibit the highly stress lattice and fragile nature of wafers processed by wet processing.
摘要翻译： 一种方法使用颗粒喷砂工具保持包含图案化结构的晶片。 接下来，该方法将颗粒引导到图案化结构，使得颗粒以预定速度接触图案化结构并去除图案化结构。 当基本上将所有图案化结构从晶片上移除时，控制在晶片处引导颗粒的这个过程以停止引导颗粒。 该方法还包括选择具有等于或小于3微米尺寸的颗粒。 例如，颗粒可以包括氧化铝，氧化硅，铈和/或塑料。 通过保持等于3微米或更小的粒度，喷砂产生基本上平滑的晶片表面，从而省去了随后的晶片抛光的需要。 此外，通过这种处理制造的晶片不会表现出通过湿法加工处理的晶片的高应力晶格和脆性。
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公开(公告)号：US20080139088A1
公开(公告)日：2008-06-12
申请号：US11609573
申请日：2006-12-12
IPC分类号： B24B1/00
CPC分类号： B24C3/322
摘要： A method holds wafers that contain patterned structures using a particle blasting tool. Next, the method directs particles at the patterned structures, such that the particles contact the patterned structures with a predetermined velocity and remove the patterned structures. This process of directing the particles at the wafer is controlled to stop directing the particles when substantially all of the patterned structures are removed from the wafer. This process also comprises selecting the particles to have a size equal to or less than 3 microns. For example, the particles can comprise aluminum oxide, silicon oxide, cerium, and/or a plastic. By maintaining the particle size equal to 3 microns or less, the blasting produces a substantially smooth wafer surface, thereby omitting the need for subsequent wafer polishing. Further, the wafers produced by such processing do not exhibit the highly stress lattice and fragile nature of wafers processed by wet processing.
摘要翻译： 一种方法使用颗粒喷砂工具保持包含图案化结构的晶片。 接下来，该方法将颗粒引导到图案化结构，使得颗粒以预定速度接触图案化结构并去除图案化结构。 当基本上将所有图案化结构从晶片上移除时，控制在晶片处引导颗粒的这个过程以停止引导颗粒。 该方法还包括选择具有等于或小于3微米尺寸的颗粒。 例如，颗粒可以包括氧化铝，氧化硅，铈和/或塑料。 通过保持等于3微米或更小的粒度，喷砂产生基本上平滑的晶片表面，从而省去了随后的晶片抛光的需要。 此外，通过这种处理制造的晶片不会表现出通过湿法加工处理的晶片的高应力晶格和脆性。
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公开(公告)号：US20080064185A1
公开(公告)日：2008-03-13
申请号：US11926668
申请日：2007-10-29
申请人： Allan Abrams , Donald Brouillette , Joseph Danaher , Timothy Krywanczyk , Rene Lamothe , Ivan Stone , Matthew Whalen
发明人： Allan Abrams , Donald Brouillette , Joseph Danaher , Timothy Krywanczyk , Rene Lamothe , Ivan Stone , Matthew Whalen
IPC分类号： H01L21/30
CPC分类号： H01L21/3081 , H01L21/304 , H01L2221/6834
摘要： There is provided a method for making a wafer comprising the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.
摘要翻译： 提供了一种用于制造晶片的方法，包括以下步骤：提供具有第一表面，相对的第二表面和限定衬底的厚度的至少一个侧边缘的衬底，所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域，并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。
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公开(公告)号：US20050090110A1
公开(公告)日：2005-04-28
申请号：US10989059
申请日：2004-11-15
IPC分类号： H01L21/768 , H01L21/311
CPC分类号： H01L21/76898
摘要： A structure and method of formation. The substrate has front and back surfaces on opposite sides of the substrate. The substrate has a backside portion extending from the back surface to a second depth into the substrate as measured from the front surface. At least one via is formed in the substrate and extends from the front surface to a via depth into the substrate. The via depth is specific to each via. The via depth of each via is less than an initial thickness of the substrate. The second depth does not exceed the minimum via depth of the via depths. Organic material (e.g., photoresist) is inserted into each via. The organic material is subsequently covered with a tape, followed by removal of the backside portion of the substrate. The tape is subsequently removed from the organic material, followed by removal of the organic material from each via.
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公开(公告)号：US20050045591A1
公开(公告)日：2005-03-03
申请号：US10604991
申请日：2003-08-29
申请人： Steven Codding , Timothy Krywanczyk , Joseph Danaher , John Malinowski , James Palmer , Melvin Kelly , Caitlin Weinstein , Wolfgang Sauter
发明人： Steven Codding , Timothy Krywanczyk , Joseph Danaher , John Malinowski , James Palmer , Melvin Kelly , Caitlin Weinstein , Wolfgang Sauter
IPC分类号： C23F3/06 , H01L21/321 , C23F1/00
CPC分类号： H01L21/3212 , C23F3/06
摘要： A method of treating a molybdenum (moly) mask used in a C4 process to pattern C4 contacts. The moly mask has a wafer side which contacts a wafer during the C4 process and has a rough surface that includes spikes/projections of moly. The moly mask also has a non wafer side and a plurality of holes extending through the mask to pattern C4 contacts in the C4 process. An adhesive layer, such as an adhesive tape, is applied to the non wafer side of the moly mask, to enable a polishing tool to pull a vacuum on the non wafer side of the moly mask in spite of the presence of the holes to secure the moly mask during a subsequent polishing step. The tape also functions as a cushion so that defects on the non wafer side of the moly mask do not replicate through the moly mask to the polished wafer side of the moly mask. The wafer side of the moly mask is then subjected to mechanical or chemical/mechanical polishing to substantially remove the spikes of moly without significantly altering the dimensions of the moly mask or the holes.
摘要翻译： 一种处理C4工艺中使用的钼（钼）掩模的图案化C4接触的方法。 钼掩模具有在C4工艺期间接触晶片的晶片侧，并且具有包括钼的尖峰/突起的粗糙表面。 钼掩模还具有非晶片侧和在C4工艺中延伸穿过掩模以形成图案C4触点的多个孔。 粘合剂层例如胶带被施加到钼掩模的非晶片侧，以使得抛光工具能够在钼掩模的非晶片侧上拉真空，尽管存在孔以确保 在随后的抛光步骤期间的钼掩模。 胶带还起垫片的作用，使得钼掩模的非晶片侧的缺陷不会通过钼掩模复制到钼掩模的抛光晶片侧。 然后对钼掩模的晶片侧进行机械或化学/机械抛光，以基本上除去钼的尖峰而不显着改变钼掩模或孔的尺寸。
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6.发明申请METHOD FOR CLEANING PARTICULATE FOREIGN MATTER FROM THE SURFACES OF SEMICONDUCTOR WAFERS 审中-公开从半导体波形表面清除颗粒状外来物质的方法公开(公告)号：US20070054115A1
公开(公告)日：2007-03-08
申请号：US11162369
申请日：2005-09-08
CPC分类号： H01L21/02057 , H01L21/02016 , H01L21/02096 , H01L21/67092 , H01L21/67132 , H01L21/6836 , H01L2221/68327 , Y10T428/28
摘要： System and method for applying an adhesive tape or a pressure release tape to a surface of the semiconductor wafer to remove particulate contaminants or foreign material that may have been collected thereon. The pressure-release tape to which the foreign material is adherent is peeled off or removed from the surface of the semiconductor wafer. Advantageously, a pressure-sensitive adhesive tape may be utilized which does not require any intermediate steps between application thereof onto the surface substrate. The adhesive tape provides a novel degree of adhesion to a surface of the substrate compared to the tapes employed in the art, in order to increase the efficiency in removing the foreign materials. Moreover, no residue is left from the pressure-sensitive tape on the surface of the substrate or semiconductor wafer after the step of removing the tape to which the foreign material has adhered.
摘要翻译： 将粘合带或压力释放带施加到半导体晶片的表面以除去可能在其上收集的颗粒污染物或异物的系统和方法。 外来材料附着的压力释放带从半导体晶片的表面剥离或去除。 有利地，可以使用压敏粘合带，其在施加到表面基底上之后不需要任何中间步骤。 与本领域中使用的带相比，粘合带提供了与基材表面的新颖程度的粘附，以提高除去异物的效率。 此外，在除去附着有异物的胶带的步骤之后，在基板或半导体晶片的表面上的压敏胶带不残留残留物。
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公开(公告)号：US20060163204A1
公开(公告)日：2006-07-27
申请号：US10905914
申请日：2005-01-26
IPC分类号： B44C1/22 , H01L21/306 , H01L21/461 , C23F1/00
CPC分类号： H01L21/6835 , H01L2221/6834 , H01L2924/19041
摘要： A semiconductor structure fabrication method for removing a tape physically attached to a device side of the semiconductor substrate by an adhesive layer of the tape, wherein the adhesive layer comprises an adhesive material. The method includes the step of submerging the tape in a liquid chemical comprising monoethanolamine or an alkanolamine for a pre-specified period of time sufficient to allow for a separation of the tape from the semiconductor substrate without damaging devices on the semiconductor substrate.
摘要翻译： 一种半导体结构制造方法，用于通过所述带的粘合剂层去除物理地附接到所述半导体衬底的器件侧的带，其中所述粘合剂层包括粘合剂材料。 该方法包括将胶带浸入包含单乙醇胺或链烷醇胺的液体化学品中的步骤，其预定时间足以允许胶带从半导体衬底上分离而不损坏半导体衬底上的装置。
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8.发明申请Application of a thermally conductive thin film to a wafer backside prior to dicing to prevent chipping and cracking 有权在切割之前将导热薄膜应用于晶片背面以防止碎裂和开裂公开(公告)号：US20060105547A1
公开(公告)日：2006-05-18
申请号：US10990778
申请日：2004-11-16
IPC分类号： H01L21/301 , H01L21/46 , H01L21/78 , H01L21/44
CPC分类号： H01L23/562 , H01L21/78 , H01L23/36 , H01L23/3737 , H01L2924/0002 , H01L2924/00
摘要： A thermally conductive protective film or layer is applied to the backside surface of a semiconductor wafer prior to a subsequent dicing operation performed on the wafer to singulate the wafer into diced semiconductor chips, during which the thin thermally conductive film minimizes and prevents chipping and cracking damage to the wafer and diced chips. During subsequent electrical operation of a diced chip, the thin thermally conductive film functions as a thermal conductor to dissipate and conduct away to a heat sink any heat generated during operation of the chip
摘要翻译： 在对晶片进行随后的切割操作之前，将导热保护膜或层施加到半导体晶片的背面，以便将晶片分成切割的半导体芯片，在此期间，薄导热膜最小化并防止切屑和破裂损伤 到晶圆和切片芯片。 在切割芯片的随后电气操作期间，薄导热膜用作热导体，以消散并导致散热器在芯片操作期间产生的热量
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9.发明申请Ultraviolet energy curable tape and method of making a semiconductor chip using the tape 有权紫外线固化胶带和使用胶带制造半导体芯片的方法公开(公告)号：US20050104147A1
公开(公告)日：2005-05-19
申请号：US10715689
申请日：2003-11-18
CPC分类号： H01L21/67132
摘要： There is provided a UV energy curable tape comprising an adhesive material including a UV energy curable oligomer, a UV energy initiator, and a material which emits optical light when the tape composition is substantially fully cured. A semiconductor chip made using the tape is also provided.
摘要翻译： 提供了一种UV能量可固化带，其包括粘合剂材料，其包括UV能量可固化低聚物，UV能量引发剂和当带组合物基本上完全固化时发射光的材料。 还提供了使用带制成的半导体芯片。
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10.发明申请REWORK PROCESS FOR REMOVING RESIDUAL UV ADHESIVE FROM C4 WAFER SURFACES 审中-公开从C4波形表面去除残留紫外线粘合剂的工艺流程公开(公告)号：US20080099149A1
公开(公告)日：2008-05-01
申请号：US11968669
申请日：2008-01-03
IPC分类号： B32B37/12
CPC分类号： H01L21/67132 , H01L21/02057 , H01L21/67028
摘要： A method for the removal of residual UV radiation-sensitive adhesive from the surfaces of semiconductor wafers, remaining thereon from protective UV radiation-sensitive tapes which were stripped from the semiconductor wafers. Moreover, provided is an arrangement for implementing the removal of residual sensitive adhesive, which remain from tapes employed as protective layers on semiconductor wafers, particularly wafers having surfaces including C4 connections.
摘要翻译： 从半导体晶片剥离的保护性紫外线辐射敏感带保留在其上的半导体晶片的表面上去除残留的UV辐射敏感性粘合剂的方法。 此外，提供了一种用于实现从半导体晶片上用作保护层的带留下的残留敏感性粘合剂的去除，特别是具有包括C4连接的表面的晶片的布置。
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