公开(公告)号：US20060249745A1

公开(公告)日：2006-11-09

申请号：US11387864

申请日：2006-03-24

申请人： Su-hee Chae ,  Tae-hoon Jang ,  Hyung-kun Kim ,  Youn-joon Sung

发明人： Su-hee Chae ,  Tae-hoon Jang ,  Hyung-kun Kim ,  Youn-joon Sung

IPC分类号： H01L33/00

CPC分类号： H01L33/647 ,  B82Y20/00 ,  H01L33/642 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02492 ,  H01S5/22 ,  H01S5/34333

摘要： A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.

摘要翻译： 散热结构被倒装贴合到发光元件上并且有利于散热。 散热结构包括：面向发光元件并具有至少一个凹槽的基座; 填充到所述至少一个凹槽的至少一部分中的导电材料层; 以及插入在发光元件和用于接合的基座之间的焊料层。 散热结构和具有该散热结构的发光装置允许在操作期间有效地散发在发光元件中产生的热量。

公开(公告)号：US08017421B2

公开(公告)日：2011-09-13

申请号：US11889126

申请日：2007-08-09

申请人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

发明人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

公开(公告)号：US20110300654A1

公开(公告)日：2011-12-08

申请号：US13137374

申请日：2011-08-10

申请人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

发明人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

IPC分类号： H01L33/36

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

公开(公告)号：US08367443B2

公开(公告)日：2013-02-05

申请号：US13137374

申请日：2011-08-10

申请人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

发明人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

公开(公告)号：US20080102549A1

公开(公告)日：2008-05-01

申请号：US11889126

申请日：2007-08-09

申请人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

发明人： Youn-joon Sung ,  Su-hee Chae ,  Tae-hoon Jang ,  Kyu-sang Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L33/22 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341

摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.

摘要翻译： 提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

公开(公告)号：US07276740B2

公开(公告)日：2007-10-02

申请号：US11372204

申请日：2006-03-10

申请人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

发明人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

IPC分类号： H01L33/00

CPC分类号： H01L23/15 ,  H01L23/49811 ,  H01L23/49838 ,  H01L33/62 ,  H01L2224/10175

摘要： A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

摘要翻译： 提供了一种用于发光器件封装的基座。 基座包括基板; 分别形成在所述基板上的第一接合层和第二接合层; 分别形成在第一接合层和第二接合层上的第一阻挡层和第二阻挡层; 分别形成在第一阻挡层和第二阻挡层上的第一焊料和第二焊料; 以及形成在第一阻挡层和第二阻挡层周围的第一阻挡层和第二阻挡层，在倒装芯片工艺期间阻挡熔化的第一焊料和熔化的第二焊料溢出。

公开(公告)号：US20060138444A1

公开(公告)日：2006-06-29

申请号：US11220696

申请日：2005-09-08

申请人： Won-kyoung Chio ,  Tae-hoon Jang ,  Su-hee Chae ,  Hyung-kun Kim

发明人： Won-kyoung Chio ,  Tae-hoon Jang ,  Su-hee Chae ,  Hyung-kun Kim

IPC分类号： H01L29/24

CPC分类号： H01L33/62 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/48091 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02256 ,  H01S5/02272 ,  H01S5/02476 ,  H01S5/0425 ,  H01L2924/00014

摘要： A flip-chip bonding structure of a light-emitting element is provided. The structure improves a heat emission efficiency by using a metal column having a high thermal conductivity instead of a solder bump. The structure includes a light-emitting element, a sub-mount, and a metal column. The metal column connects the light-emitting element with the sub-mount electrically and thermally.

摘要翻译： 提供了一种发光元件的倒装键合结构。 该结构通过使用具有高导热性的金属柱而不是焊料凸块来提高散热效率。 该结构包括发光元件，副安装座和金属柱。 金属柱将发光元件与电子和热电子元件连接。

公开(公告)号：US20060249744A1

公开(公告)日：2006-11-09

申请号：US11372204

申请日：2006-03-10

申请人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

发明人： Hyung-kun Kim ,  Su-hee Chae ,  Tae-hoon Jang

IPC分类号： H01L33/00

CPC分类号： H01L23/15 ,  H01L23/49811 ,  H01L23/49838 ,  H01L33/62 ,  H01L2224/10175

摘要： A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

摘要翻译： 提供了一种用于发光器件封装的基座。 基座包括基板; 分别形成在所述基板上的第一接合层和第二接合层; 分别形成在第一接合层和第二接合层上的第一阻挡层和第二阻挡层; 分别形成在第一阻挡层和第二阻挡层上的第一焊料和第二焊料; 以及形成在第一阻挡层和第二阻挡层周围的第一阻挡层和第二阻挡层，在倒装芯片工艺期间阻挡熔化的第一焊料和熔化的第二焊料溢出。

公开(公告)号：US07092420B2

公开(公告)日：2006-08-15

申请号：US10732241

申请日：2003-12-11

申请人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

发明人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

IPC分类号： H01S5/00

CPC分类号： H01S5/0206 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2205 ,  H01L2924/00

摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

摘要翻译： 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。

公开(公告)号：US20070015313A1

公开(公告)日：2007-01-18

申请号：US11477911

申请日：2006-06-30

申请人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

发明人： Joon-seop Kwak ,  Su-hee Chae ,  Youn-joon Sung

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01S5/0206 ,  H01L33/62 ,  H01L2924/0002 ,  H01S5/0207 ,  H01S5/02236 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/2205 ,  H01L2924/00

摘要： Provided is a submount flip-chip bonded to a semiconductor laser diode chip with stepped first and second electrodes. The submount includes a substrate having first and second surfaces which are separated by a step height corresponding to a height difference between the first and second electrodes; first and second metal layers being formed to the same thickness on the first and second surfaces, respectively; and first and second solder layers being formed to the same thickness on the first and second metal layers, respectively, and being bonded to the first and second electrodes, respectively.

摘要翻译： 提供了一种与具有阶梯状的第一和第二电极的半导体激光二极管芯片接合的底座倒装芯片。 所述基座包括具有第一和第二表面的基板，所述第一和第二表面被分隔开与所述第一和第二电极之间的高度差相对应的台阶高度; 分别在第一和第二表面上形成相同厚度的第一和第二金属层; 并且第一和第二焊料层分别在第一和第二金属层上形成为相同的厚度，并分别结合到第一和第二电极。