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115 条记录 (耗时 0.032 秒)

    Process without post-etch cleaning-converting polymer and by-products into an inert layer
    2.
    发明授权
    Process without post-etch cleaning-converting polymer and by-products into an inert layer 失效
    无需蚀刻后清洁 - 将聚合物和副产物转化成惰性层的方法

    公开(公告)号：US06365508B1

    公开(公告)日：2002-04-02

    申请号：US09618264

    申请日：2000-07-18

    申请人： Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi ,  Simon Chooi ,  Yakub Aliyu

    发明人： Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi ,  Simon Chooi ,  Yakub Aliyu

    IPC分类号： H01L214763

    CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76826

    摘要： A new method to avoid post-etch cleaning in a metallization process is described. An insulating layer is formed over a first metal line in a dielectric layer overlying a semiconductor substrate. A via opening is etched through the insulating layer to the first metal line whereby a polymer forms on sidewalls of the via opening. The polymer is treated with a fluorinating agent whereby the polymer is converted to an inert layer. Thereafter, a second metal line is formed within the via opening wherein the inert layer acts is as a barrier layer to complete the metallization process in the fabrication of an integrated circuit device.

    摘要翻译： 描述了在金属化过程中避免蚀刻后清洁的新方法。 在覆盖半导体衬底的电介质层中的第一金属线上形成绝缘层。 通孔开口通过绝缘层蚀刻到第一金属线，由此在通孔开口的侧壁上形成聚合物。 用氟化剂处理聚合物，由此将聚合物转化为惰性层。 此后，在通孔开口内形成第二金属线，其中惰性层作为阻挡层，以在集成电路器件的制造中完成金属化工艺。

    Method to remove copper contamination by using downstream oxygen and chelating agent plasma
    7.
    发明授权
    Method to remove copper contamination by using downstream oxygen and chelating agent plasma 失效
    使用下游氧和螯合剂等离子体去除铜污染的方法

    公开(公告)号：US06350689B1

    公开(公告)日：2002-02-26

    申请号：US09839962

    申请日：2001-04-23

    申请人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

    发明人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

    IPC分类号： H01L2144

    CPC分类号： H01L21/02074 ,  H01L21/02046 ,  H01L21/0209 ,  H01L21/32136 ,  Y10S438/906

    摘要： A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.

    摘要翻译： 一种从半导体晶片去除铜污染的方法，包括以下步骤。 提供其上具有铜污染的半导体晶片。 从第一来源提供含有下游等离子体的氧化基团（或者可以在氧化剂上使用卤素（F2，Cl2或Br2））。 从第二来源提供蒸发的螯合剂。 将含有下游等离子体和气化螯合剂的氧化基团混合以形成含有下游等离子体/汽化螯合剂混合物的氧化基团。 混合物被引导到铜污染物，使得混合物与铜污染物反应形成挥发性产物。 从晶片附近去除挥发性产物。

    Method and apparatus for removing contaminants from the perimeter of a semiconductor substrate
    9.
    发明授权
    Method and apparatus for removing contaminants from the perimeter of a semiconductor substrate 失效
    从半导体衬底的周边去除污染物的方法和装置

    公开(公告)号：US06540841B1

    公开(公告)日：2003-04-01

    申请号：US09607284

    申请日：2000-06-30

    申请人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

    发明人： Sudipto Ranendra Roy ,  Subhash Gupta ,  Simon Chooi ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Paul Kwok Keung Ho

    IPC分类号： B08B700

    CPC分类号： B08B1/04 ,  B08B3/04

    摘要： A new method and apparatus is provided that can be applied to clean outer edges of semiconductor substrates. Under the first embodiment of the invention, a brush is mounted on the surface of the substrate around the periphery of the substrate, chemicals are fed to the surface that is being cleaned by means of a hollow core on which the cleaning brush is mounted. The surface that is being cleaned rotates at a relatively high speed thereby causing the chemicals that are deposited on this surface (by the brush) to remain in the edge of the surface. Under the second embodiment of the invention, a porous roller is mounted between a chemical reservoir and the surface that is being cleaned, the surface that is being cleaned rotates at a relatively high speed. The chemicals that are deposited by the interfacing porous roller onto the surface that is being cleaned therefore remain at the edge of this surface thereby causing optimum cleaning action of the edge of the surface. After contaminants have been removed in this manner from the surface, the surface can be further cleaned by applying DI water.

    摘要翻译： 提供了可用于清洁半导体衬底的外边缘的新方法和装置。 在本发明的第一实施例中，刷子安装在基板周围的基板的表面上，化学品通过其上安装有清洁刷的中空芯被供给到待清洁的表面。 待清洁的表面以相对高的速度旋转，从而使沉积在该表面（由刷子）上的化学物质残留在表面的边缘。 在本发明的第二实施例中，多孔辊安装在化学容器和待清洁的表面之间，待清洁的表面以相对较高的速度旋转。 因此，由界面多孔辊沉积在待清洗的表面上的化学物质保留在该表面的边缘，从而引起表面边缘的最佳清洁作用。 污染物以这种方式从表面除去后，可以通过加入去离子水进一步清洁表面。

    Method of copper transport prevention by a sputtered gettering layer on backside of wafer
    10.
    发明授权
    Method of copper transport prevention by a sputtered gettering layer on backside of wafer 有权
    通过晶片背面的溅射吸气层预防铜传输的方法

    公开(公告)号：US06358821B1

    公开(公告)日：2002-03-19

    申请号：US09619376

    申请日：2000-07-19

    申请人： Subhash Gupta ,  Simon Chooi ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono

    发明人： Subhash Gupta ,  Simon Chooi ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Xu Yi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Leonard Sudijono

    IPC分类号： H01L2122

    CPC分类号： H01L21/3221 ,  C23C14/165 ,  H01L21/2885

    摘要： A method of preventing copper transport on a semiconductor wafer, comprising the following steps. A semiconductor wafer having a front side and a backside is provided. Metal, selected from the group comprising aluminum, aluminum-copper, aluminum-silicon, and aluminum-copper-silicon is sputtered on the backside of the wafer to form a layer of metal. The back side sputtered aluminum layer may be partially oxidized at low temperature to further decrease the copper penetration possibility and to also provide greater flexibility in subsequent copper interconnect related processing. Once the back side layer is in place, the wafer can be processed as usual. The sputtered back side aluminum layer can be removed during final backside grinding.

    摘要翻译： 一种防止半导体晶片上的铜传输的方法，包括以下步骤。 提供具有正面和背面的半导体晶片。 从包括铝，铝 - 铜，铝 - 硅和铝 - 铜 - 硅的组中选择的金属溅射在晶片的背面以形成一层金属。 背面溅射的铝层可以在低温下部分氧化，以进一步降低铜的渗透可能性，并且在随后的铜互连相关处理中也提供更大的灵活性。 一旦背面层就位，就可以照常处理晶片。 最后的背面研磨可以除去溅射的背面铝层。