公开(公告)号：US07060613B2

公开(公告)日：2006-06-13

申请号：US10988692

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

公开(公告)号：US06365508B1

公开(公告)日：2002-04-02

申请号：US09618264

申请日：2000-07-18

申请人： Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi ,  Simon Chooi ,  Yakub Aliyu

发明人： Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Xu Yi ,  Simon Chooi ,  Yakub Aliyu

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/76807 ,  H01L21/76826

摘要： A new method to avoid post-etch cleaning in a metallization process is described. An insulating layer is formed over a first metal line in a dielectric layer overlying a semiconductor substrate. A via opening is etched through the insulating layer to the first metal line whereby a polymer forms on sidewalls of the via opening. The polymer is treated with a fluorinating agent whereby the polymer is converted to an inert layer. Thereafter, a second metal line is formed within the via opening wherein the inert layer acts is as a barrier layer to complete the metallization process in the fabrication of an integrated circuit device.

摘要翻译： 描述了在金属化过程中避免蚀刻后清洁的新方法。 在覆盖半导体衬底的电介质层中的第一金属线上形成绝缘层。 通孔开口通过绝缘层蚀刻到第一金属线，由此在通孔开口的侧壁上形成聚合物。 用氟化剂处理聚合物，由此将聚合物转化为惰性层。 此后，在通孔开口内形成第二金属线，其中惰性层作为阻挡层，以在集成电路器件的制造中完成金属化工艺。

公开(公告)号：US07452808B2

公开(公告)日：2008-11-18

申请号：US10988768

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

摘要翻译： 提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。 在暴露的金属端接垫上形成导电聚合物塞。 在导电聚合物塞上形成一个符合标准的界面层。 半导体芯片的导电聚合物插塞与相应的金属凸块对准。 导电聚合物塞上的一致界面层与相应的金属凸块配合。 一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。 还公开了形成和图案化羰基镍层的方法。

公开(公告)号：US06967162B2

公开(公告)日：2005-11-22

申请号：US10988769

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

公开(公告)号：US06391783B1

公开(公告)日：2002-05-21

申请号：US09615811

申请日：2000-07-13

申请人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L2131

CPC分类号： H01L21/76844 ,  H01L21/288 ,  H01L21/76867

摘要： A method of forming a metal plug, comprising the following steps. An etched dielectric layer, over a conductive layer, over a semiconductor structure are provided. The etched dielectric layer having a via hole and an exposed periphery. The etched dielectric layer is treated with at least one alkaline earth element source to form an in-situ metal barrier layer within the dielectric layer exposed periphery. A metal plug is formed within the via hole wherein the in-situ metal barrier layer prevents diffusion of the metal from the metal plug into the dielectric oxide layer.

摘要翻译： 一种形成金属塞的方法，包括以下步骤。 提供了在半导体结构之上的导电层上的蚀刻介电层。 蚀刻的介电层具有通孔和暴露的周边。 蚀刻的电介质层用至少一个碱土元素源处理，以在电介质层外露的外围形成原位金属阻挡层。 在通孔内形成金属塞，其中原位金属阻挡层防止金属从金属塞扩散到电介质氧化物层中。

公开(公告)号：US06340608B1

公开(公告)日：2002-01-22

申请号：US09612564

申请日：2000-07-07

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho ,  Xu Yi

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho ,  Xu Yi

IPC分类号： H01L2150

CPC分类号： H01L24/81 ,  H01L2224/13147 ,  H01L2224/81801 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal track thereover are provided. A metal bump is formed over the exposed metal terminating pad. A photosensitive resin plug is formed over the metal bump. The metal bump of the semiconductor chip is aligned with the corresponding metal track on the separate substrate. The photosensitive resin plug over the metal bump is mated with the corresponding the metal track. The photosensitive resin plug is exposed to UV light to cure the photosensitive resin plug, permanently attaching the metal bump of the semiconductor chip to the corresponding metal track of the separate substrate.

摘要翻译： 提供了具有暴露的金属端接垫的半导体芯片，以及具有其上相应的暴露的金属轨道的单独的基板。 在暴露的金属端接垫上方形成金属凸块。 在金属凸块上形成感光树脂插头。 半导体芯片的金属凸块与分离的基板上的对应金属轨迹对准。 金属凸块上的感光树脂插头与相应的金属轨道配合。 感光树脂插头暴露于紫外线光以固化光敏树脂插头，将半导体芯片的金属凸块永久地连接到单独基板的相应金属轨道上。

公开(公告)号：US06350689B1

公开(公告)日：2002-02-26

申请号：US09839962

申请日：2001-04-23

申请人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

发明人： Paul Ho ,  Simon Chooi ,  Yakub Aliyu ,  Mei Sheng Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L21/02074 ,  H01L21/02046 ,  H01L21/0209 ,  H01L21/32136 ,  Y10S438/906

摘要： A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.

摘要翻译： 一种从半导体晶片去除铜污染的方法，包括以下步骤。 提供其上具有铜污染的半导体晶片。 从第一来源提供含有下游等离子体的氧化基团（或者可以在氧化剂上使用卤素（F2，Cl2或Br2））。 从第二来源提供蒸发的螯合剂。 将含有下游等离子体和气化螯合剂的氧化基团混合以形成含有下游等离子体/汽化螯合剂混合物的氧化基团。 混合物被引导到铜污染物，使得混合物与铜污染物反应形成挥发性产物。 从晶片附近去除挥发性产物。

公开(公告)号：US20050090102A1

公开(公告)日：2005-04-28

申请号：US10988769

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

摘要翻译： 提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。 在暴露的金属端接垫上形成导电聚合物塞。 在导电聚合物塞上形成一个符合标准的界面层。 半导体芯片的导电聚合物插塞与相应的金属凸块对准。 导电聚合物塞上的一致界面层与相应的金属凸块配合。 一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。 还公开了形成和图案化羰基镍层的方法。

公开(公告)号：US20050090039A1

公开(公告)日：2005-04-28

申请号：US10988692

申请日：2004-11-15

申请人： Simon Chooi ,  Yakub Aliyu ,  Mei Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

发明人： Simon Chooi ,  Yakub Aliyu ,  Mei Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy ,  Paul Ho ,  Yi Xu

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

公开(公告)号：US06429117B1

公开(公告)日：2002-08-06

申请号：US09619018

申请日：2000-07-19

申请人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： John Sudijono ,  Yakub Aliyu ,  Mei Sheng Zhou ,  Simon Chooi ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L214763

CPC分类号： H01L21/76831 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76826 ,  Y10S438/958

摘要： A method of preventing metal penetration and diffusion from metal structures formed over a semiconductor structure, comprising the following steps. A semiconductor structure including a patterned dielectric layer is provided. The patterned dielectric layer includes an opening and an upper surface. The dielectric layer surface is then passivated to form a passivation layer. A metal plug is formed within the dielectric layer opening. The passivation layer prevents penetration and diffusion of metal out from the metal plug into the semiconductor structure and the patterned dielectric layer.

摘要翻译： 一种防止在半导体结构上形成的金属结构的金属渗透和扩散的方法，包括以下步骤。 提供包括图案化介电层的半导体结构。 图案化电介质层包括开口和上表面。 然后将介电层表面钝化以形成钝化层。 在电介质层开口内形成金属塞。 钝化层防止金属从金属插塞渗入并扩散到半导体结构和图案化的介电层中。