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    Treatment of silicon prior to nickel silicide formation
    1.
    发明申请
    Treatment of silicon prior to nickel silicide formation 有权
    在硅化镍形成之前处理硅

    公开(公告)号：US20060035463A1

    公开(公告)日：2006-02-16

    申请号：US10914928

    申请日：2004-08-10

    申请人： Sue Crank ,  Shirin Siddiqui ,  Deborah Riley ,  Trace Hurd ,  Peijun Chen

    发明人： Sue Crank ,  Shirin Siddiqui ,  Deborah Riley ,  Trace Hurd ,  Peijun Chen

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/28518 ,  H01L21/76829

    摘要： A method of preparing a die comprises treating exposed silicon to form an oxide prior to silicide formation; and depositing metal on the oxide. The metal may comprise titanium, cobalt, nickel, platinum, palladium, tungsten, molybdenum, or combinations thereof on the oxide. The oxide may be less than or equal to about 15 angstroms thick. In various embodiments, treating exposed silicon to form an oxide comprises forming a non- thermal oxide. Treating exposed silicon to form an oxide may also comprise treating the exposed silicon with an oxidizing plasma; alternatively, treating exposed silicon to form an oxide may comprise forming a chemical oxide. In certain other embodiments, treating exposed silicon to form an oxide comprises treating exposed silicon with a solution comprising ammonium hydroxide, hydrogen peroxide, and water; hydrochloric acid, hydrogen peroxide, and water; hydrogen peroxide; ozone; ozonated deionized water; or combinations thereof.

    摘要翻译： 制备模具的方法包括在硅化物形成之前处理暴露的硅以形成氧化物; 并在氧化物上沉积金属。 金属可以在氧化物上包含钛，钴，镍，铂，钯，钨，钼或它们的组合。 氧化物可以小于或等于约15埃厚。 在各种实施方案中，处理暴露的硅以形成氧化物包括形成非热氧化物。 处理暴露的硅以形成氧化物还可以包括用氧化等离子体处理暴露的硅; 或者，处理暴露的硅以形成氧化物可包括形成化学氧化物。 在某些其他实施方案中，处理暴露的硅以形成氧化物包括用包含氢氧化铵，过氧化氢和水的溶液处理暴露的硅; 盐酸，过氧化氢和水; 过氧化氢; 臭氧; 臭氧化去离子水; 或其组合。

    NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE THEREFOR
    2.
    发明申请
    NICKEL ALLOY SILICIDE INCLUDING INDIUM AND A METHOD OF MANUFACTURE THEREFOR 有权
    镍合金硅胶包括其中的一种和其制造方法

    公开(公告)号：US20070049022A1

    公开(公告)日：2007-03-01

    申请号：US11551374

    申请日：2006-10-20

    申请人： Peijun Chen ,  Duofeng Yue ,  Amitabh Jain ,  Sue Crank ,  Thomas Bonifield ,  Homi Mogul

    发明人： Peijun Chen ,  Duofeng Yue ,  Amitabh Jain ,  Sue Crank ,  Thomas Bonifield ,  Homi Mogul

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

    摘要： The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other elements, may include a gate structure located over a substrate, the gate structure including a gate dielectric layer and gate electrode layer. The semiconductor device may further include source/drain regions located in/over the substrate and adjacent the gate structure, and a nickel alloy silicide located in the source/drain regions, the nickel alloy silicide having an amount of indium located therein.

    摘要翻译： 本发明提供一种半导体器件，一种制造方法以及一种用于制造包括该半导体器件的集成电路的方法。 除了其他元件之外，半导体器件可以包括位于衬底上的栅极结构，栅极结构包括栅极电介质层和栅极电极层。 该半导体器件还可以包括位于衬底中或栅极结构附近的源极/漏极区域和位于源极/漏极区域中的镍合金硅化物，所述镍合金硅化物具有位于其中的铟的量。

    Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing
    3.
    发明申请
    Metal silicide induced lateral excessive encroachment reduction by silicon <110> channel stuffing 有权
    金属硅化物通过硅<110>通道填料引起横向过度侵蚀

    公开(公告)号：US20060024935A1

    公开(公告)日：2006-02-02

    申请号：US10903319

    申请日：2004-07-30

    申请人： Duofeng Yue ,  Peijun Chen ,  Sue Crank ,  Thomas Bonifield ,  Jiong-Ping Lu ,  Jie-Jie Xu

    发明人： Duofeng Yue ,  Peijun Chen ,  Sue Crank ,  Thomas Bonifield ,  Jiong-Ping Lu ,  Jie-Jie Xu

    IPC分类号： H01L21/28

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L21/28518 ,  H01L29/6659

    摘要： The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises implanting small atoms into an nMOS semiconductor substrate (130) to a depth (132) no greater than about 30 nanometers into the nMOS semiconductor substrate. The method further comprises depositing a transition metal layer (400) over the nMOS semiconductor substrate. The transition metal layer and the nMOS semiconductor substrate are reacted to form the metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (700).

    摘要翻译： 本发明提供一种制造用于半导体器件（110）的金属硅化物电极（100）的方法。 该方法包括将小原子注入nMOS半导体衬底（130）至nMOS半导体衬底中不大于约30纳米的深度（132）。 该方法还包括在nMOS半导体衬底上沉积过渡金属层（400）。 使过渡金属层和nMOS半导体衬底反应以形成金属硅化物电极。 本发明的其它方面包括制造集成电路（700）的方法。