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    Resistive random access memory and method of manufacturing the same
    3.
    发明申请
    Resistive random access memory and method of manufacturing the same 有权
    电阻式随机存取存储器及其制造方法

    公开(公告)号：US20080121864A1

    公开(公告)日：2008-05-29

    申请号：US11987150

    申请日：2007-11-28

    申请人： Sun-ae Seo ,  Young-soo Park ,  Ran-ju Jung ,  Myoung-jae Lee ,  Dong-chul Kim ,  Seung-eon Ahn

    发明人： Sun-ae Seo ,  Young-soo Park ,  Ran-ju Jung ,  Myoung-jae Lee ,  Dong-chul Kim ,  Seung-eon Ahn

    IPC分类号： H01L45/00

    CPC分类号： H01L45/165 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146

    摘要： Example embodiments relate to a resistive random access memory (RRAM) and a method of manufacturing the RRAM. A RRAM according to example embodiments may include a lower electrode, which may be formed on a lower structure (e.g., substrate). A resistive layer may be formed on the lower electrode, wherein the resistive layer may include a transition metal dopant. An upper electrode may be formed on the resistive layer. Accordingly, the transition metal dopant may form a filament in the resistive layer that operates as a current path.

    摘要翻译： 示例实施例涉及电阻随机存取存储器（RRAM）和制造RRAM的方法。 根据示例性实施例的RRAM可以包括下电极，其可以形成在下结构（例如，衬底）上。 电阻层可以形成在下电极上，其中电阻层可以包括过渡金属掺杂剂。 上电极可以形成在电阻层上。 因此，过渡金属掺杂剂可以在作为电流路径工作的电阻层中形成丝。

    Field effect transistor, logic circuit including the same and methods of manufacturing the same
    10.
    发明授权
    Field effect transistor, logic circuit including the same and methods of manufacturing the same 有权
    场效应晶体管，逻辑电路包括相同的方法和制造方法相同

    公开(公告)号：US08274098B2

    公开(公告)日：2012-09-25

    申请号：US12005372

    申请日：2007-12-27

    申请人： Hyun-jong Chung ,  Ran-ju Jung ,  Sun-ae Seo ,  Dong-chul Kim ,  Chang-won Lee

    发明人： Hyun-jong Chung ,  Ran-ju Jung ,  Sun-ae Seo ,  Dong-chul Kim ,  Chang-won Lee

    IPC分类号： H01L29/66

    CPC分类号： H01L29/18 ,  H01L21/823807 ,  H01L27/11807 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/2003 ,  H01L29/2203 ,  H01L29/7606 ,  H01L29/7781 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/7869

    摘要： Provided are a field effect transistor, a logic circuit including the same and methods of manufacturing the same. The field effect transistor may include an ambipolar layer that includes a source region, a drain region, and a channel region between the source region and the drain region, wherein the source region, the drain region, and the channel region may be formed in a monolithic structure, a gate electrode on the channel region, and an insulating layer separating the gate electrode from the ambipolar layer, wherein the source region and the drain region have a width greater than that of the channel region in a second direction that crosses a first direction in which the source region and the drain region are connected to each other.

    摘要翻译： 提供一种场效应晶体管，包括该场效应晶体管的逻辑电路及其制造方法。 场效应晶体管可以包括双极层，其包括源极区域，漏极区域和源极区域和漏极区域之间的沟道区域，其中源区域，漏极区域和沟道区域可以形成在 单片结构，沟道区上的栅极电极以及将栅电极与双极层分离的绝缘层，其中源极区和漏极区的宽度大于第二方向上的沟道区的宽度，该第二方向跨越第一 源极区域和漏极区域彼此连接的方向。