Automated system for estimating ring oscillator reliability and testing AC response and method of operation thereof
    4.
    发明授权
    Automated system for estimating ring oscillator reliability and testing AC response and method of operation thereof 失效
    用于估计环形振荡器可靠性和测试交流响应的自动化系统及其操作方法

    公开(公告)号:US06693434B2

    公开(公告)日:2004-02-17

    申请号:US09768729

    申请日:2001-01-24

    IPC分类号: G01R313163

    CPC分类号: G01R31/27 G01R31/2824

    摘要: An automated system for, and method of estimating ring oscillator reliability and testing AC response of a device under test (DUT). In one embodiment, the system includes: (1) a DUT board that accepts, and allows electrical communication with, a plurality of DUTs, (2) a power source, couplable to the DUT board, that provides AC power of controllable characteristics to the plurality of DUTs and (3) an automated switching matrix, couplable between the DUT board and a circuit analyzer, that allows the circuit analyzer to analyze ring oscillators and predetermined portions of the plurality of DUTs at predetermined times as the power source provides the power thereto.

    摘要翻译: 一种用于估计环形振荡器可靠性和测试被测设备(DUT)的交流响应的自动化系统及方法。 在一个实施例中,系统包括:(1)DUT板,其接受并允许与多个DUT进行电气通信,(2)可耦合到DUT板的电源,其向所述DUT板提供可控特性的AC功率 多个DUT和(3)自动切换矩阵,可耦合在DUT板和电路分析器之间,允许电路分析仪在电源向其提供电力的情况下在预定时间内分析环形振荡器和多个DUT的预定部分 。

    Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby
    5.
    发明授权
    Method of forming metal oxide metal capacitors using multi-step rapid thermal process and a device formed thereby 有权
    使用多步快速热处理形成金属氧化物金属电容器的方法和由此形成的器件

    公开(公告)号:US06323078B1

    公开(公告)日:2001-11-27

    申请号:US09418106

    申请日:1999-10-14

    IPC分类号: H01L218234

    CPC分类号: H01L28/40

    摘要: The present invention provides a method of forming a metal oxide metal (MOM) capacitor on a substrate, such as a silicon substrate, of a semiconductor wafer in a rapid thermal process (RTP) machine. The MOM capacitor is fabricated by forming a metal layer on the semiconductor substrate. The metal layer is then subjected to a first rapid thermal process in a substantially inert but nitrogen-free atmosphere that consumes a portion of the metal layer to form a first metal electrode layer and a silicide layer between the first metal electrode and the semiconductor substrate. The semiconductor wafer is then subjected to a second rapid thermal process. During this process, the remaining portion of the metal layer is oxidized to form a metal oxide on the first metal electrode, which serves as the dielectric layer of the MOM capacitor. Following the formation of the dielectric layer, a second metal electrode layer is then conventionally formed on the metal oxide, which completes the formation of the MOM capacitor. Preferably, the first electrode layer and the metal oxide layer are formed in a single RTP machine.

    摘要翻译: 本发明提供了一种在快速热处理(RTP)机器中在半导体晶片的衬底(例如硅衬底)上形成金属氧化物金属(MOM)电容器的方法。 通过在半导体衬底上形成金属层来制造MOM电容器。 然后在基本惰性但无氮的气氛中对金属层进行第一快速热处理,其消耗金属层的一部分以在第一金属电极和半导体衬底之间形成第一金属电极层和硅化物层。 然后对半导体晶片进行第二快速热处理。 在该过程中,金属层的剩余部分被氧化,在作为MOM电容器的电介质层的第一金属电极上形成金属氧化物。 在形成电介质层之后,通常在金属氧化物上形成第二金属电极层,从而完成MOM电容器的形成。 优选地,第一电极层和金属氧化物层在单个RTP机器中形成。

    Method of forming metal oxide metal capacitors using multi-step rapid material thermal process and a device formed thereby
    6.
    发明授权
    Method of forming metal oxide metal capacitors using multi-step rapid material thermal process and a device formed thereby 有权
    使用多步快速材料热处理形成金属氧化物金属电容器的方法和由此形成的器件

    公开(公告)号:US06495875B2

    公开(公告)日:2002-12-17

    申请号:US09962641

    申请日:2001-09-25

    IPC分类号: H01L2976

    CPC分类号: H01L28/40

    摘要: The present invention provides a method of forming a metal oxide metal (MOM)capacitor on a substrate, such as a silicon substrate, of a semiconductor wafer in a rapid thermal process (RTP) machine. The MOM capacitor is fabricated by forming a metal layer on the semiconductor substrate. The metal layer is then subjected to a first rapid thermal process in a substantially inert but nitrogen-free atmosphere that consumes a portion of the metal layer to form a first metal electrode layer and a silicide layer between the first metal electrode and the semiconductor substrate. The semiconductor wafer is then subjected to a second rapid thermal process. During this process, the remaining portion of the metal layer is oxidized to form a metal oxide on the first metal electrode, which serves as the dielectric layer of the MOM capacitor. Following the formation of the dielectric layer, a second metal electrode layer is then conventionally formed on the metal oxide, which completes the formation of the MOM capacitor. Preferably, the first electrode layer and the metal oxide layer are formed in a single RTP machine.

    摘要翻译: 本发明提供了一种在快速热处理(RTP)机器中在半导体晶片的衬底(例如硅衬底)上形成金属氧化物金属(MOM)电容器的方法。 通过在半导体衬底上形成金属层来制造MOM电容器。 然后在基本惰性但无氮的气氛中对金属层进行第一快速热处理,其消耗金属层的一部分以在第一金属电极和半导体衬底之间形成第一金属电极层和硅化物层。 然后对半导体晶片进行第二快速热处理。 在该过程中,金属层的剩余部分被氧化,在作为MOM电容器的电介质层的第一金属电极上形成金属氧化物。 在形成电介质层之后,通常在金属氧化物上形成第二金属电极层,从而完成MOM电容器的形成。 优选地,第一电极层和金属氧化物层在单个RTP机器中形成。

    Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
    7.
    发明授权
    Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs 有权
    用于在化学机械平面化(CMP)焊盘中产生原位槽的方法,以及新颖的CMP焊盘设计

    公开(公告)号:US08932116B2

    公开(公告)日:2015-01-13

    申请号:US13612135

    申请日:2012-09-12

    摘要: Methods for producing in-situ grooves in CMP pads are provided. In general, the methods for producing in-situ grooves comprise the steps of patterning a silicone lining, placing the silicone lining in, or on, a mold, adding CMP pad material to the silicone lining, and allowing the CMP pad to solidify. CMP pads comprising novel groove designs are also described. For example, described here are CMP pads comprising concentric circular grooves and axially curved grooves, reverse logarithmic grooves, overlapping circular grooves, lassajous groves, double spiral grooves, and multiply overlapping axially curved grooves. The CMP pads may be made from polyurethane, and the grooves produced therein may be made by a method from the group consisting of silicone lining, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

    摘要翻译: 提供了用于在CMP垫中产生原位凹槽的方法。 通常,用于制造原位槽的方法包括将硅衬里图案化,将硅衬里放置在模具中或模具上,将CMP衬垫材料添加到硅衬里,并允许CMP垫固化的步骤。 还描述了包括新颖凹槽设计的CMP垫。 例如,这里描述的是包括同心圆形槽和轴向弯曲槽,反向对数槽,重叠圆形槽,拉索格,双螺旋槽和多重重叠的轴向曲线槽的CMP垫。 CMP垫可以由聚氨酯制成,并且其中产生的凹槽可以由以下方法制成:由硅胶衬里,激光书写,水射流切割,3-D印刷,热成型,真空成型,微接触印刷, 热冲压及其混合物。

    Multi-piece food product and method for making the same
    8.
    发明授权
    Multi-piece food product and method for making the same 有权
    多件食品及其制作方法

    公开(公告)号:US08029849B2

    公开(公告)日:2011-10-04

    申请号:US10944209

    申请日:2004-09-17

    IPC分类号: A23G3/54

    摘要: A multi-piece food product (10) comprising a plurality of strands (12A-12K) that are extruded and aggregated to form an aesthetically pleasing food product is provided. A formulation used to make each of the strands (12A-12K) includes a mixture comprising at least 20% sweetener, at least 15% starchy material, and at least 1% fruit by weight based a total dry weight of the mixture to yield a starch-based confectionary food product. One process for forming the multi-piece food product (10) includes extruding a food stream from a slurry, dividing the food stream into three separate food streams (24A, 24B), injecting color, flavor, and ascorbic acid into the food streams (24A, 24B), conveying the food streams (24A, 24B) into a former (26) and extruding the strands (12A-12K) therefrom, forming the strands (12A, 12B) into an aggregate food mass (31), cooling the food mass (31), and cutting the food mass (31) into individual portions.

    摘要翻译: 提供了一种多片食品(10),其包括被挤出和聚集以形成美学上令人满意的食品的多根股线(12A-12K)。 用于制备每条链(12A-12K)的制剂包含基于混合物的总干重的包含至少20%甜味剂,至少15%淀粉质材料和至少1重量%果糖的混合物,以产生 淀粉型糖果食品。 用于形成多片食品(10)的一个方法包括从浆料挤出食物流,将食物流分成三个独立的食物流(24A,24B),将颜色,风味剂和抗坏血酸注入食物流中 24A,24B),将食物流(24A,24B)输送到成形器(26)中并从其中挤出股线(12A-12K),将股线(12A,12B)形成为集料食品(31),冷却 食物块(31),并将食物块(31)切割成单独的部分。

    Customized Polishing Pads for CMP and Methods of Fabrication and Use Thereof
    9.
    发明申请
    Customized Polishing Pads for CMP and Methods of Fabrication and Use Thereof 有权
    定制CMP抛光垫及其制作和使用方法

    公开(公告)号:US20090053976A1

    公开(公告)日:2009-02-26

    申请号:US11884829

    申请日:2006-02-21

    CPC分类号: B24B37/24 B33Y80/00

    摘要: The present application relates to polishing pads for chemical mechanical planarization (CMP) of substrates, and methods of fabrication and use thereof. The pads described in this invention are customized to polishing specifications where specifications include (but not limited to) to the material being polished, chip design and architecture, chip density and pattern density, equipment platform and type of slurry used. These pads can be designed with a specialized polymeric nano-structure with a long or short range order which allows for molecular level tuning achieving superior thermo-mechanical characteristics. More particularly, the pads can be designed and fabricated so that there is both uniform and nonuniform spatial distribution of chemical and physical properties within the pads. In addition, these pads can be designed to tune the coefficient of friction by surface engineering, through the addition of solid lubricants, and creating low shear integral pads having multiple layers of polymeric material which form an interface parallel to the polishing surface. The pads can also have controlled porosity, embedded abrasive, novel grooves on the polishing surface, for slurry transport, which are produced in situ, and a transparent region for endpoint detection.

    摘要翻译: 本申请涉及用于基板的化学机械平面化(CMP)的抛光垫及其制造和使用方法。 本发明中描述的焊盘定制为抛光规格,其中规格包括(但不限于)被抛光材料,芯片设计和结构,芯片密度和图案密度,设备平台和使用的浆料类型。 这些垫可以设计成具有长或短范围顺序的专门的聚合物纳米结构,其允许分子水平调节实现优异的热机械特性。 更具体地,可以设计和制造焊盘,使得焊盘内的化学和物理性质均匀和不均匀的空间分布。 此外,这些垫可以被设计成通过表面工程,通过添加固体润滑剂来调节摩擦系数,并且产生具有形成与抛光表面平行的界面的多层聚合材料的低剪切整体垫。 焊盘还可以具有受控的孔隙率,嵌入式研磨剂,抛光表面上的新型凹槽,用于原位生产的浆料输送,以及用于端点检测的透明区域。