Light emitting device
    1.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US09281449B2

    公开(公告)日:2016-03-08

    申请号:US14072070

    申请日:2013-11-05

    摘要: A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by ⅕ W and a position separated from the first side surface of the light emitting structure by ½ W.

    摘要翻译: 发光器件包括基板,彼此分离并设置在基板上的多个发光单元以及电连接两个相邻的发光单元的多个导电互连层。 每个发光单元包括包括第一导电型半导体层,有源层和第二导电类型半导体层,第一电极,第二电极和蚀刻区域的发光结构。 发光结构还包括第一侧表面和第二侧表面,并且如果第一侧表面和第二侧表面之间的宽度被限定为W,则第二电极设置在与第一侧表面和第二侧表面之间分离的位置之间的区域中 侧面由⅕W和从发光结构的第一侧面分开的位置½W。

    LIGHT EMITTING DEVICE
    2.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20140159071A1

    公开(公告)日:2014-06-12

    申请号:US14096138

    申请日:2013-12-04

    IPC分类号: H01L27/15

    摘要: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

    摘要翻译: 发光装置包括基板,发光单元,每个发光单元包括包括下半导体层和上半导体层的发光结构,上电极和下电极,导电互连层,电连接 发光单元中的第一个和第二个发光单元的上电极以及从上电极和上半导体层之间延伸设置的电流阻挡层,其中每个发光单元还包括导电层 布置成将第二发光单元的上电极电连接到第二发光单元的上半导体层。

    Light emitting device and light emitting device package
    4.
    发明授权
    Light emitting device and light emitting device package 有权
    发光器件和发光器件封装

    公开(公告)号:US09029899B2

    公开(公告)日:2015-05-12

    申请号:US13399751

    申请日:2012-02-17

    摘要: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, a first electrode on the first conductive semiconductor layer, a transparent electrode on the second conductive semiconductor layer, and a second electrode on the transparent electrode. The first electrode includes a first electrode pad on a first region of the first conductive semiconductor layer exposed from the second conductive semiconductor layer and the active layer and a first electrode finger part extending from the first electrode pad toward a second region, in which the first conductive semiconductor layer is exposed. A gap between the transparent electrode and the first electrode finger part is gradually narrowed from the first region toward the second region.

    摘要翻译: 公开了一种发光器件和发光器件封装。 发光器件包括发光结构,其包括第一导电半导体层,第一导电半导体层上的有源层和有源层上的第二导电半导体层,第一导电半导体层上的第一电极,透明电极 在第二导电半导体层上的第二电极和透明电极上的第二电极。 第一电极包括在从第二导电半导体层和有源层暴露的第一导电半导体层的第一区域上的第一电极焊盘和从第一电极焊盘朝向第二区域延伸的第一电极指部分,其中第一电极焊盘 导电半导体层被暴露。 透明电极和第一电极指部之间的间隙从第一区域朝向第二区域逐渐变窄。

    Light emitting device
    5.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US09349920B2

    公开(公告)日:2016-05-24

    申请号:US13720646

    申请日:2012-12-19

    IPC分类号: H01L33/00 H01L33/38

    摘要: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

    摘要翻译: 公开了一种发光器件。 发光器件包括:发光结构,包括第一导电类型半导体层,有源层和第二导电类型半导体层;透光导电层,设置在第二导电型半导体层上并具有多个 的第二导电型半导体层暴露的开放区域和设置在透光性导电层上的第二电极,以便延伸到至少一个开放区域之外,其中第二电极接触第二导电类型 半导体层,并且在除了开放区域之外的区域中接触透光导电层。

    LIGHT EMITTING DEVICE
    6.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20130161585A1

    公开(公告)日:2013-06-27

    申请号:US13720646

    申请日:2012-12-19

    IPC分类号: H01L33/38

    摘要: A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

    摘要翻译: 公开了一种发光器件。 发光器件包括:发光结构,包括第一导电类型半导体层,有源层和第二导电类型半导体层;透光导电层,设置在第二导电型半导体层上并具有多个 的第二导电型半导体层暴露的开放区域和设置在透光性导电层上的第二电极,以便延伸到至少一个开放区域之外,其中第二电极接触第二导电类型 半导体层,并且在除了开放区域之外的区域中接触透光导电层。