LIGHT EMITTING DEVICE
    2.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号:US20140159071A1

    公开(公告)日:2014-06-12

    申请号:US14096138

    申请日:2013-12-04

    IPC分类号: H01L27/15

    摘要: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.

    摘要翻译: 发光装置包括基板,发光单元,每个发光单元包括包括下半导体层和上半导体层的发光结构,上电极和下电极,导电互连层,电连接 发光单元中的第一个和第二个发光单元的上电极以及从上电极和上半导体层之间延伸设置的电流阻挡层,其中每个发光单元还包括导电层 布置成将第二发光单元的上电极电连接到第二发光单元的上半导体层。

    Light emitting device
    3.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US09281449B2

    公开(公告)日:2016-03-08

    申请号:US14072070

    申请日:2013-11-05

    摘要: A light emitting device includes a substrate, a plurality of light emitting cells separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a first electrode, a second electrode, and an etching area. The light emitting structure further includes a first side surface and a second side surface, and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by ⅕ W and a position separated from the first side surface of the light emitting structure by ½ W.

    摘要翻译: 发光器件包括基板,彼此分离并设置在基板上的多个发光单元以及电连接两个相邻的发光单元的多个导电互连层。 每个发光单元包括包括第一导电型半导体层,有源层和第二导电类型半导体层,第一电极,第二电极和蚀刻区域的发光结构。 发光结构还包括第一侧表面和第二侧表面,并且如果第一侧表面和第二侧表面之间的宽度被限定为W,则第二电极设置在与第一侧表面和第二侧表面之间分离的位置之间的区域中 侧面由⅕W和从发光结构的第一侧面分开的位置½W。

    Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system
    5.
    发明授权
    Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting system 有权
    发光器件,制造发光器件的方法,发光器件封装和照明系统

    公开(公告)号:US08878212B2

    公开(公告)日:2014-11-04

    申请号:US13020041

    申请日:2011-02-03

    摘要: A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer.

    摘要翻译: 发光器件包括衬底,至少一个电极,第一接触层,第二接触层,发光结构层和电极层。 电极通过衬底设置。 第一接触层设置在基板的顶表面上并电连接到电极。 第二接触层设置在基板的底表面上并与电极电连接。 发光结构层设置在基板的上方距离基板一定距离处并电连接到第一接触层。 发光结构层包括第一导电类型半导体层,有源层和第二导电类型半导体层。 电极层设置在发光结构层上。

    Light emitting device and light emitting device package
    6.
    发明授权
    Light emitting device and light emitting device package 有权
    发光器件和发光器件封装

    公开(公告)号:US08564008B2

    公开(公告)日:2013-10-22

    申请号:US13073381

    申请日:2011-03-28

    IPC分类号: H01L33/00

    摘要: Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive type semiconductor layer having a first top surface and a second top surface under the first top surface, an active layer on the first top surface of the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, a first electrode on the second top surface of the first conductive type semiconductor layer, an intermediate refractive layer on the second top surface of the first conductive type semiconductor layer, and a second electrode connected to the second conductive type semiconductor layer.

    摘要翻译: 提供发光器件,制造发光器件的方法,发光器件封装和照明系统。 发光器件包括第一导电型半导体层,其具有第一顶表面和第一顶表面下的第二顶表面,在第一导电类型半导体层的第一顶表面上的有源层,第二导电类型半导体层 有源层,第一导电类型半导体层的第二顶表面上的第一电极,第一导电类型半导体层的第二顶表面上的中间折射层和连接到第二导电类型半导体层的第二电极。

    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND ILLUMINATION SYSTEM
    7.
    发明申请
    LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND ILLUMINATION SYSTEM 有权
    发光装置,发光装置包装和照明系统

    公开(公告)号:US20110254035A1

    公开(公告)日:2011-10-20

    申请号:US13004676

    申请日:2011-01-11

    IPC分类号: H01L33/42 H01L33/00

    摘要: Disclosed are a light emitting device, a light emitting device package, and an illumination system. The light emitting device includes a substrate; a light emitting structure layer including a first conductive type semiconductor layer formed on the substrate and having first and second upper surfaces, in which the second upper surface is closer to the substrate than the first upper surface, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode on the second conductive type semiconductor layer; and at least one first electrode extending at least from the second upper surface of the first conductive type semiconductor layer to a lower surface of the substrate by passing through the substrate.

    摘要翻译: 公开了一种发光器件,发光器件封装和照明系统。 发光装置包括:基板; 发光结构层,包括形成在所述基板上的第一和第二上表面的第一导电类型半导体层,其中所述第二上表面比所述第一上表面更靠近所述基板,所述第一导电类型半导体上的有源层 层和有源层上的第二导电类型半导体层; 第二导电型半导体层上的第二电极; 以及至少一个第一电极,所述至少一个第一电极至少从第一导电类型半导体层的第二上表面延伸通过衬底到衬底的下表面。

    Light emitting device, light emitting device package, and lighting device system
    10.
    发明授权
    Light emitting device, light emitting device package, and lighting device system 有权
    发光装置,发光装置封装和照明装置系统

    公开(公告)号:US08304800B2

    公开(公告)日:2012-11-06

    申请号:US13082583

    申请日:2011-04-08

    IPC分类号: H01L33/00

    CPC分类号: H01L33/20

    摘要: A light emitting device includes a substrate, a light emitting structure including a first conductive semiconductor layer having an exposed region, an active layer, and a second conductive semiconductor layer on the substrate, a first electrode on the exposed region of the first conductive semiconductor layer, and a second electrode on the second conductive semiconductor layer, wherein a side of the light emitting structure includes a first sloped side sloped from a reference plane, the first sloped side includes a concave-convex pattern having a concave-convex structure in which a first direction length is greater than a second direction length, the reference plane is a plane perpendicular to a direction in which the substrate faces the light emitting structure, and the first direction is a sloped direction of the first sloped side and the second direction is a lateral direction of the first sloped side.

    摘要翻译: 发光器件包括衬底,发光结构,包括在衬底上具有暴露区域的第一导电半导体层,有源层和第二导电半导体层,第一导电半导体层的暴露区域上的第一电极 以及第二导电半导体层上的第二电极,其中,所述发光结构的一侧包括从参考平面倾斜的第一倾斜侧,所述第一倾斜侧包括具有凹凸结构的凹凸图案,其中, 所述第一方向长度大于第二方向长度,所述基准面是与所述基板朝向所述发光结构的方向垂直的面,所述第一方向为所述第一倾斜侧的倾斜方向,所述第二方向为 第一倾斜侧的横向。