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    Phase-change memory device and method of fabricating the same
    1.
    发明授权
    Phase-change memory device and method of fabricating the same 有权
    相变存储器件及其制造方法

    公开(公告)号：US07884347B2

    公开(公告)日：2011-02-08

    申请号：US12425152

    申请日：2009-04-16

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    IPC分类号： H01L29/06

    CPC分类号： H01L45/1233 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1683

    摘要： A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a Ge2Sb2+xTe5 phase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a Ge2Sb2Te5 phase-change material are disposed respectively on and under the Ge2Sb2+xTe5 main operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

    摘要翻译： 提供了相变材料层具有不同组成的多层结构的相变存储器件及其制造方法。 相变存储器件包括形成在基板上的第一电极层，形成在第一电极层上的加热电极层，形成在加热器电极层上并具有部分地暴露加热器电极层的孔的绝缘层， 形成为填充孔并且部分地接触加热器电极层的改变材料层和形成在相变材料层上的第二电极层。 作为存储器工作区域的主要工作区域由Ge2Sb2 + xTe5相变材料形成，以确保存储器操作的稳定性，同时由Ge2Sb2Te5相变材料形成的辅助区域分别设置在其上 Ge2Sb2 + xTe5主要工作区域，以防止热能通过电极泄漏，从而降低功耗。

    NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME
    2.
    发明申请
    NONVOLATILE PROGRAMMABLE SWITCH DEVICE USING PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANURACTURING THE SAME 有权
    使用相变存储器件的非易失性可编程开关器件及其制造方法

    公开(公告)号：US20100108977A1

    公开(公告)日：2010-05-06

    申请号：US12428628

    申请日：2009-04-23

    申请人： Sung Min YOON ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    发明人： Sung Min YOON ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    IPC分类号： H01L45/00 ,  H01L21/768 ,  H01L21/31

    CPC分类号： H01L45/1226 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

    摘要翻译： 提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。 开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有 与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属 电极层和设置成填充通孔的第二金属电极层。 开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

    Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same
    3.
    发明授权
    Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same 有权
    使用相变存储器件的非易失性可编程开关器件及其制造方法

    公开(公告)号：US08445887B2

    公开(公告)日：2013-05-21

    申请号：US12428628

    申请日：2009-04-23

    申请人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    发明人： Sung Min Yoon ,  Byoung Gon Yu ,  Soon Won Jung ,  Seung Yun Lee ,  Young Sam Park ,  Joon Suk Lee

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1226 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

    摘要翻译： 提供了一种使用相变存储器件的非易失性可编程开关器件及其制造方法。 开关装置包括基板，设置在基板上的多个端子的第一金属电极层，设置在基板上并具有自加热沟道结构的相变材料层，相变材料层具有 与第一金属电极层的端子和介于导入区域之间的沟道区域电接触的多个导入区域，设置在第一金属电极层和相变材料层上的绝缘层，设置在第一金属 电极层和设置成填充通孔的第二金属电极层。 开关装置利用相变材料的电阻加热来执行存储器操作，而不需要额外的加热器电极，从而最小化由于金属电极的热导率导致的热损失，从而降低开关器件的功耗。

    Method for fabricating phase change memory device using solid state reaction
    5.
    发明授权
    Method for fabricating phase change memory device using solid state reaction 有权
    使用固态反应制造相变存储器件的方法

    公开(公告)号：US08470719B2

    公开(公告)日：2013-06-25

    申请号：US13110579

    申请日：2011-05-18

    申请人： Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

    发明人： Seung Yun Lee ,  Young Sam Park ,  Sung Min Yoon ,  Soon Won Jung ,  Byoung Gon Yu

    IPC分类号： H01L21/461 ,  H01L21/06

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1608 ,  H01L45/1666

    摘要： Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法，其中使用固态反应形成相变层以减少可编程体积，从而降低功耗。 该装置包括第一反应物层，形成在第一反应物层上的第二反应物层和由形成第一反应物层的材料与第一反应物层之间的固态反应形成在第一和第二反应物层之间的相变层 形成第二反应物层的材料。 相变存储器件消耗低功率并以高速运行。